The disclosure discloses an IGBT module reliability evaluation method and device based on bonding wire degradation, which belong to the field of IGBT reliability evaluation. The realization of the method includes: obtaining a relationship between a IGBT chip conduction voltage drop U.sub.ces and an operating current I.sub.c along with a chip junction temperature T.sub.c; for an IGBT module under test, obtaining the conduction voltage drop U.sub.ces-c of the IGBT chip through the operating current I.sub.c and the chip junction temperature T.sub.c; obtaining an external conduction voltage drop U.sub.ces-m of the IGBT module by using a voltmeter; performing subtraction to obtain a voltage drop at a junction of a IGBT chip and a bonding wire, and combining the operating current to obtain a resistance at the junction; determining that the IGBT module has failed when the resistance at the junction increases to 5% of an equivalent impedance of the IGBT module.

A serial IGBT voltage equalization method and system based on an auxiliary voltage source is disclosed. The method includes the following steps. (1) Detect a port dynamic voltage of each serial IGBT. (2) Perform dynamic overvoltage diagnosis respectively on the port dynamic voltage of each IGBT. (3) Supply emergency high level signal to the gate of the IGBT when there is dynamic overvoltage. (4) Stop supplying emergency high level signal to the gate of the IGBT, supply a constant voltage at the gate of the IGBT through the auxiliary voltage source. The invention provides a constant voltage through the auxiliary voltage source, prolongs the off time of the faulty IGBT, and turns off other IGBTs simultaneously, thereby achieving the purpose of serial IGBT voltage equalization.

The methods and systems for correcting for an inductive load when testing high voltages devices are described. A high voltages device is a device under test (DUT) in a double-pulse test, which may require the inductive load. The method can include in a low current, high voltage time period, estimating an inductor current contribution range after a turn on of the device-under-test connected to an inductive load with an air core inductor. The method subtracts the estimated inductor current contribution from a device-under-test collector current to output a corrected collector current. This allows the double pulse test to be conducted with an air-core inductor. Vehicles can use the DUT in traction power applications.

An evaluation apparatus includes an insulating plate, a plurality of probes fixed to the insulating plate, an insulating portion having a connection portion connected to the insulating plate in a detachable manner and a tip portion continuous with the connection portion, the tip portion being narrower than the connection portion, an insulator formed by combining the insulating portions to surround the plurality of probes in planar view, and an evaluation unit for passing currents through the plurality of probes to evaluate electrical characteristics of an object to be measured.

Provided is a test method comprising: preparing a plurality of groups for setting, each of which has a plurality of semiconductor devices for setting, and assigning an inspection voltage to each of the respective plurality of groups for setting; performing first testing by applying the assigned inspection voltage to the semiconductor devices for setting, and testing, at a first temperature, the plurality of semiconductor devices for setting included in each of the plurality of groups for setting; performing second testing by testing, at a second temperature different from the first temperature, a semiconductor device for setting having been determined as being non-defective and by detecting a breakdown voltage at which the semiconductor device for setting is broken; acquiring a relationship between the inspection voltage and the breakdown voltage; and setting an applied voltage used when testing a semiconductor device under test at the first temperature, based on the acquired relationship.

The methods and systems for correcting for an inductive load when testing high voltages devices are described. A high voltages device is a device under test (DUT) in a double-pulse test, which may require the inductive load. The method can include in a low current, high voltage time period, estimating an inductor current contribution range after a turn on of the device-under-test connected to an inductive load with an air core inductor. The method subtracts the estimated inductor current contribution from a device-under-test collector current to output a corrected collector current. This allows the double pulse test to be conducted with an air-core inductor. Vehicles can use the DUT in traction power applications.

An evaluation apparatus includes an insulating plate, a plurality of probes fixed to the insulating plate, an insulating portion having a connection portion connected to the insulating plate in a detachable manner and a tip portion continuous with the connection portion, the tip portion being narrower than the connection portion, an insulator formed by combining the insulating portions to surround the plurality of probes in planar view, and an evaluation unit for passing currents through the plurality of probes to evaluate electrical characteristics of an object to be measured.

The present disclosure relates to power semiconductor modules. The teachings thereof may be embodied in modules with a power semiconductor component and methods, as well as a circuit arrangement. For example, a method may include: developing a thermal model of the power semiconductor module at a reference time point; establishing a reference temperature based on the thermal model; measuring a temperature-sensitive electrical parameter of the power semiconductor module during operation of the power semiconductor module; determining a current temperature from the measured temperature-sensitive electrical parameter of the power semiconductor module; calculating a temperature difference between the current temperature and the reference temperature; and determining a deterioration of the power semiconductor module based on the calculated temperature difference.

Operation of an insulated gate bipolar transistor (IGBT) is monitored by an apparatus that has a capacitor connected between a collector of the IGBT and an input node. A processing circuit, coupled to the input node, responds to current flowing through the capacitor by providing an indication whether a voltage level at the collector is changing and the rate of that change. The processing circuit also employs the capacitor current to provide an output voltage that indicates the voltage at the IGBT collector.

A semiconductor device capable of simplifying wiring work is provided. A semiconductor device includes a semiconductor element (insulated gate bipolar transistor IGBT) provided with an emitter main electrode and an emitter sense electrode, an integrated circuit having a detection terminal and a mold resin body that seals the semiconductor element and the integrated circuit, and a lead. The lead is provided with an inner lead part sealed in the mold resin body and electrically connected to the emitter sense electrode, an inner lead part sealed in the mold resin body and electrically connected to the emitter main electrode, and an outer lead part connected to the lead part on one side, connected to the inner lead part on the other side and exposed outside the mold resin body.