An exemplary embodiment of the present inventive concept provides a display device including: a display area where an image is displayed; a peripheral area disposed outside the display area; a hole area disposed within the display area; a hole crack detection line disposed adjacent to the hole area to surround the hole area and having a first end and a second end that is separated from the first end; a first detection line extending from the peripheral area and connected to the hole crack detection line to constitute a first closed circuit; a second detection line extending from the peripheral area and connected to the hole crack detection line to constitute a second closed circuit; and a circuit portion connected to the first detection line and the second detection line.

A method of identifying cell-internal defects: obtaining a circuit design of an integrated circuit, the circuit design including netlists of one or more cells coupled to one another; identifying the netlist corresponding to one of the one or more cells; injecting a defect to one of a plurality of circuit elements and one or more interconnects of the cell; retrieving a first current waveform at a location of the cell where the defect is injected by applying excitations to inputs of the cell; retrieving, without the defect injected, a second current waveform at the location of the cell by applying the same excitations to the inputs of the cell; and selectively annotating, based on the first current waveform and the second current waveform, an input/output table of the cell with the defect.

In some examples, a device includes a power structure and a sensing structure that is electrically isolated from the power structure. The device also includes processing circuitry configured to determine whether the sensing structure includes a prognostic health indicator, wherein the prognostic health indicator is indicative of a health of the power structure.

A multipurpose front-end board for solid state sensors is described. In particular, the board is optimized for fast timing particle detection or for characterization and test of silicon and diamond detectors that produce a fast but small current signal at the passage of a particle. The multipurpose front-end board includes a sensor pad configured to receive a solid state sensor to be characterized, distribute a bias potential, and read out the current signal produced by the sensor. The board also includes an amplifier configured to read out the current signal from the sensor pad and convert the current signal to an output voltage signal and a discriminator configured to receive the output voltage signal from the amplifier. A threshold voltage of the discriminator can be controlled by a potentiometer, and the board includes at least one output port to provide data for characterization of the sensor.

A method is provided for testing discrete output signals of a device-under-test (DUT). The method includes receiving an electrical quantity at each conductive path of a plurality of conductive paths that are each coupled to respective discrete output signals of the DUT in one-to-one correspondence. The method further includes controlling application of the electrical quantity to each of the conductive path independent of application of the electrical quantity along the other conductive paths, so that a the electrical quantity is applied simultaneously to all of the conductive paths, the electrical quantity applied to each conductive path being toggled at a unique frequency having a unique period. Accordingly, a characteristic of the electrical quantity at each of the respective test output conductors over the duration of the longest period of the unique periods is indicative of any disturbance between the discrete output signals associated with the test output conductor and all of the other discrete output signals.

A measurement of phase frequency response of a device under test (DUT), wherein the DUT is characterized by a set of switchable configurations, comprises choosing the steps of a particular configuration of the DUT having nominal parameters as a reference configuration, measuring an amplitude frequency response A.sub.ref (f) and a phase frequency response ϕ.sub.ref(f) of the reference configuration, processing all configurations of the DUT which are different from the reference configuration, one after another, by measuring an amplitude response A(f) of the configuration being processed, calculating a minimum phase difference response Δϕ.sub.min (f); and calculating for each configuration, a phase frequency response ϕ(f) of the respective configuration which is being processed, in accordance with ϕ(f) =ϕ.sub.ref(f)+Δϕ.sub.min(f).

Systems, methods, and devices are described for in-situ testing of vertical-cavity surface-emitting lasers (VCSELs), VCSEL arrays or laser diodes (each a laser). Testing may comprise bias voltage measurements of one or more lasers. Embodiments may comprise one of a laser, a driver circuit providing a bipolar drive to the laser, and a sensing circuit to measure and/or monitor damage or degradation of the laser. The bipolar drive may comprise a pulsed forward bias output configured to produce a light output during an on-time of the laser, and a pulsed reverse bias output during an off-time of the pulsed forward bias output. The pulsed outputs may comprise a variable, chirped frequency. One or more of a reverse leakage current, and a junction temperature may be measured to monitor a state of health of the laser.

An apparatus and method for diagnosing a watchdog timer is provided. The watchdog timer is used to detect and recover from a malfunction of a battery management system. Before entering a shutdown mode in response to a shutdown command from an external device, the apparatus outputs an invalid trigger signal to the watchdog timer and diagnoses a malfunction of the watchdog timer depending on whether the watchdog timer outputs a reset signal.

A method, including determining a change in an actuator impedance based on a change in an electrical property of a system of which the actuator is apart, and determining one or more system characteristics based on the change in the actuator impedance.

The present application provides two-port on-wafer calibration piece circuit models and a method for determining parameters. The method includes: measuring a single-port on-wafer calibration piece circuit model corresponding to a first frequency band to obtain a first S parameter; calculating, according to the first S parameter, an intrinsic capacitance value of a two-port on-wafer calibration piece circuit model corresponding to the single-port on-wafer calibration piece circuit model; measuring the two-port on-wafer calibration piece circuit model corresponding to the terahertz frequency band to obtain a second S parameter; and calculating a parasitic capacitance value and a parasitic resistance value of the two-port on-wafer calibration piece circuit model according to the second S parameter and the intrinsic capacitance value.