A chip for wafer-level testing of fanout chiplet, including: a die; a carrier substrate; a plurality of redistribution layers applied to the carrier substrate; and one or more first conductive pathways in the plurality of redistribution layers, wherein the one or more first conductive pathways each comprise a first end coupled to a corresponding input/output connection point of the die and a second end coupled to a corresponding probing site, wherein the one or more first conductive pathways are not routed through the carrier substrate.

An apparatus has a semiconductor wafer hosting rows and columns of chips, where the rows and columns of chips are separated by scribe lines. There are test circuit sites in the scribe lines, each test circuit site including contact pads for simultaneous connection to probe card needles, sensor circuit select and control circuitry, and a sensor circuit bank.

An apparatus has a semiconductor wafer hosting rows and columns of chips, where the rows and columns of chips are separated by scribe lines. Selection circuitry is positioned within the scribe lines. The selection circuitry is connected to test circuits in the scribe lines. The selection circuitry operates to enable voltage control at a single test circuit while disabling all other test circuits.

An apparatus has a semiconductor wafer hosting rows and columns of chips, where the rows and columns of chips are separated by scribe lines. Voltage regulators are positioned within the scribe lines. Each voltage regulator is connected to one or more chips. Selection circuitry is positioned within the scribe lines. The selection circuitry governs access to a chip being tested.

An integrated circuit comprises a substrate that includes a first surface and a second surface. A first through substrate via (TSV) is formed between the first surface and the second surface and a first conductive material is arranged within the first TSV to form a conductive path between the first surface and the second surface through the substrate. A second TSV is formed between the first surface and the second surface and a second conductive material arranged within the second TSV to form a conductive path between the first surface and the second surface through the substrate. In examples the first TSV has a larger cross-sectional area than the second TSV, the cross-section of the first TSV and second TSV being in a plane parallel to the first surface or the second surface.

The disclosure describes to techniques for detecting field failures or performance degradation of circuits, including integrated circuits (IC), by including additional contacts, i.e. terminals, along with the functional contacts that used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, temperature and impedance. These electrical characteristics may be representative of a certain failure mode and may be an indicator for circuit state-of-health (SOH), while the circuit is performing in the field.

A system and method for the predictive maintenance of electronic components that includes sensors at at least one position via which present values of system parameters, such as temperature and voltage, and a signal propagation time at the at least one position are determined, where values of the system parameters and the signal propagation time presently determined by the sensors are retrieved by a central monitoring unit, an individual valid limit value is determined for the signal propagation time at each of the at least one position via the central monitoring unit based on the presently determined values of the system parameters, and the presently determined signal propagation time at each of the at least one position is compared with the associated valid limit value, and a notification is sent to a superordinate level, if the signal propagation time exceeds the limit value to trigger replacement of the electronic component.

Methods and devices for determining integrated circuit (IC) device degradation over time are provided. Transistors are the basic building blocks of IC devices. The degradation of the transistors in IC devices over time leads slowly to decreased switching speeds. To monitor the condition of an IC device as it ages, oscillator circuitry operating at switching frequencies of various circuits in the IC device may be included and monitored for changes in switching frequency over time. A degraded condition of the IC device may be determined when the change in switching frequency exceeds a threshold value.

An integrated circuit (IC) implements a radiation tolerance limiting feature (RTLF) to ensure that the IC, as manufactured, will fail one or more applicable radiation tolerance tests, for example by reducing or eliminating a required voltage or blocking a required signal. As a result, the IC can be manufactured by any suitable IC foundry, and exported without restriction. The RTLF can include a leakage component, such as an oxide dielectric capacitor, a radiation-sensitive MOSFET or SCR, or a photocurrent generating component. The RTLF can include redundancy to ensure reliability. A plurality of RTLFs can be included to ensure failure of any desired combination of applicable radiation tolerance tests, such as total radiation dosage, linear energy transfer events, radiation dose rate, and single event upset. The RTLF can be obfuscated within the IC design. The RTLF can include a testing output to ensure its functionality.

Two approaches for on-chip ESD detection include variable dielectric width capacitor, and vertical metal-oxide-semiconductor (MOS) capacitor MOSCAP array. The variable dielectric width capacitor approach employs metal plates terminated with sharp corners to enhance local electric field and facilitate ready breakdown of a thin dielectric between the metal plates. The vertical MOSCAP array is composed of a capacitor array connected in series. Both approaches are incorporated in an example 22 nm fully depleted silicon-on-insulator. Vertical MOSCAP arrays detect ESD events starting from about 6 V with about 6 V granularity, while the variable dielectric width capacitor is suitable for detection of high ESD voltage from about 40 V and above.