A semiconductor device is provided with: a first circuit; a plurality of pattern generators connected to the first circuit and each supplying a test pattern to the first circuit; a pattern-generator control circuit controlling each of the plurality of pattern generators; a pattern compressor compressing a result output from the first circuit in response to supply of the test patterns from the plurality of pattern generators; a pattern-compressor control circuit controlling the pattern compressor; and a self-diagnosis control circuit connected to the pattern-generator control circuit and the pattern-compressor control circuit, and controlling the pattern-generator control circuit such that stop timings of the test patterns differ from one another among the plurality of pattern generators.

Testing of die on wafer is achieved by; (1) providing a tester with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, (2) providing die on wafer with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, and (3) providing a connectivity mechanism between the bidirectional transceiver circuitry's of the tester and a selected group or all of the die on wafer for communication of the JTAG signals.

Testing of die on wafer is achieved by; (1) providing a tester with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, (2) providing die on wafer with the capability of externally communicating JTAG test signals using simultaneously bidirectional transceiver circuitry, and (3) providing a connectivity mechanism between the bidirectional transceiver circuitry's of the tester and a selected group or all of the die on wafer for communication of the JTAG signals.

A system and integrated circuits are disclosed for determining performance metrics over a plurality of cycles of an input signal using on-chip diagnostic circuitry. The system comprises a trigger generation module configured to generate a trigger signal, and diagnostic circuitry coupled with the trigger generation module. The diagnostic circuitry comprises a memory comprising a plurality of data lines, and a plurality of delay elements, each delay element of the plurality of delay elements connected between consecutive data lines of the plurality of data lines. The diagnostic circuitry is configured to receive at least one input signal, and write, upon receiving the trigger signal, values on the plurality of data lines to the memory, thereby acquiring samples of a plurality of cycles of the input signal.

An input circuit has a plurality of input terminals connected to a plurality of input lines transmitting input signals outputted from a plurality of input signal sources. The input circuit includes a controller which outputs a control signal when performing self-diagnosis of a short-circuit fault between the input lines a pulse circuit which generates pulsed self-diagnosis voltage once, twice or more times based on a control signal of the controller a switch which, when performing the self-diagnosis, applies the pulsed self-diagnosis voltage to any one of the input lines based on the control signal of the controller and a comparing/determining section which, when the self-diagnosis voltage is applied to the any one of the input lines, determines whether the short-circuit fault between the input lines has occurred based on voltage variation in the input line different from the input line to which the self-diagnosis voltage is applied.

A method for testing a signal path of a first IC formed as a monolithically integrated circuit on a semiconductor body together with a magnetic field sensor and has a signal output and a power supply connection and a test mode state and a normal operating state. A power supply of the first IC is switched off, and a signal output is connected with a reference potential, and the power supply of the first IC is switched on and the signal output is disconnected from the reference potential. Subsequently in a test mode state, a self-test is performed in the first IC and a test pattern is configured at the signal output or at the power supply connection and the test pattern is evaluated by the control unit for testing of the signal path.

A semiconductor device includes a period defining block suitable for generating a period defining signal corresponding to a predetermined test time period based on a test mode signal and one or more command signals; and a monitoring block suitable for generating a monitoring signal corresponding to an oscillation signal during the test time period based on the period defining signal.

A semiconductor device includes a period defining block suitable for generating a period defining signal corresponding to a predetermined test time period based on a test mode signal and one or more command signals; and a monitoring block suitable for generating a monitoring signal corresponding to an oscillation signal during the test time period based on the period defining signal.

An integrated circuit (IC) having a heat-generating element, such as a power MOSFET, a current-carrying conductor coupled to the heat-generating element, a sense conductor adjacent the current-carrying conductor, and a failure-detection circuit coupled to the sense conductor. When thermal cycling of the IC causes the resistance of the sense conductor to become greater than a temperature-dependent threshold value, the failure-detection circuit generates a signal indicating that the integrated circuit will soon fail. The resistance of the sense conductor is determined by injecting a current into the sense conductor to generate a voltage. The temperature-dependent threshold value is a voltage generated by injecting a current into a reference conductor disposed away from the current-carrying and sense conductors. A voltage comparator compares the two voltages to generate the output. Alternatively, the failure-detection circuit includes a processor that calculates the temperature-dependent threshold value from a temperature measurement taken on the integrated circuit.

A semiconductor device includes a semiconductor die having a peripheral region surrounding, a defect detection circuit in the peripheral region, the defect detection circuit arranged in an open conduction loop, the defect detection circuit comprising a plurality of latch circuits and a plurality of defect detection conduction paths, each defect detection conduction path of the plurality of defect detection conduction paths connecting two adjacent latch circuits of the plurality of latch circuits, and a test control circuitry configured to perform (a) a test write operation by transferring bits of an input data pattern in a forward direction of the open conduction loop to cause the plurality of latch circuits to store the bits of the input data pattern in the plurality of latch circuits, and (b) a test read operation by transferring bits stored in the plurality of latch circuits in a backward direction of the open conduction loop.