A magnetic sensor device includes a magnetic field converter that receives an input magnetic field input along a first direction and outputs an output magnetic field along a second direction, which is orthogonal to the first direction. A magnetic field detector is provided at a position where the output magnetic field can be applied. A magnetic shield that blocks an external magnetic field along the second direction. is provided. The magnetic field converter has a shape in which the length in a third direction, which is orthogonal to both the first direction and the second direction, is longer than the length in the second direction, when viewed along the first direction. The magnetic shield is provided at a position overlapping with the magnetic field converter and the magnetic field detector, when viewed along the first direction.

A system for detecting analytes in a test sample, and a method for processing the same, is provided. The system includes a cartridge reader unit that has a control unit and a pneumatic system, and a cartridge assembly that prepares the samples with mixing material(s) through communication channels. The assembly has a memory chip with parameters for preparing the sample and at least one sensor. The assembly, pneumatic system, and control unit operate together to prepare the sample and provide the prepared sample to the sensor for detecting analytes, and also process measurements from the sensor to generate test results.

A magnetic sensor includes first to fourth resistor sections and a plurality of MR elements. Each of the plurality of MR elements belongs to any of first to fourth groups. The first to fourth groups are defined based on the areas of top surfaces of the MR elements. The first resistor section, the second resistor section, the third resistor section, and the fourth resistor section are constituted of the first group, the second group, the third group, and the fourth group, respectively; the second group, the first group, the fourth group, and the third group, respectively; the first group, the fourth group, the third group, and the second group, respectively; or the third group, the second group, the first group, and the fourth group, respectively.

A magnetic sensor includes a plurality of resistor sections each including a plurality of MR elements, and a plurality of protruding surfaces each structured to cause the plurality of MR elements to detect a specific component of a target magnetic field. The plurality of MR elements are disposed dividedly in first to fourth areas corresponding to the respective resistor sections. Each of the first to fourth areas includes a first and a second end edge located at both ends in a first reference direction, and a third and a fourth end edge located at both ends in a second reference direction. An angle that each of the plurality of protruding surfaces forms with respect to the first end edge or the second end edge is larger than an angle that each of the plurality of protruding surfaces forms with respect to the third end edge or the fourth end edge.

Some embodiments relate to a magnetoresistive sensor element comprising a magnetoresistive strip. The magnetoresistive strip includes a first linear segment, and a second linear segment arranged in series with the first linear segment. The second linear segment adjoins the first linear segment at a first inner corner corresponding to a first obtuse angle having a first magnitude. The magnetoresistive strip also includes a third linear segment arranged in series with the first and second linear segments, and a fourth linear segment arranged in series with the first, second, and third linear segments. The fourth linear segment adjoins the third linear segment at a second inner corner corresponding to a second obtuse angle having a second magnitude. Te second magnitude differs from the first magnitude.

According to one embodiment, a magnetic sensor includes a first conductive part circuit, an alternating current circuit part, a first direct current circuit part, and a first element. The first conductive part circuit includes a first conductive part including a first conductive part end portion and a first conductive part other-end portion, and a first alternating current transfer element electrically connected in series with the first conductive part. The first conductive part circuit includes a first circuit end portion and a first circuit other-end portion. The alternating current circuit part is configured to apply an alternating current voltage between the first circuit end portion and the first circuit other-end portion. The first direct current circuit part is configured to apply a first direct current voltage to the first conductive part end portion and the first conductive part other-end portion. The first element includes a first magnetic layer.

A system includes a magnetic sensor that can store a magnetic state associated with a number of accumulated turns of a magnetic target. The magnetic sensor may work in conjunction with a magnetic target. The magnetic target may produce a magnetic field that, at some positions, drops below a magnetic window of the magnetic sensor. The magnetic target may produce a magnetic field that is within the magnetic window when needed to update the magnetic state of the sensor to keep track of the accumulated turns of the magnetic target. The magnetic sensor may be initialized with one or more domain walls.

The present disclosure relates to a redundant current sensor (100), comprising, in a common chip package (20), a first integrated magnetoresistive sensor circuit (110A) and a second integrated magnetoresistive sensor circuit (110B).

In an exchange coupling film that has a large magnetic field (Hex) in which the direction of magnetization of a fixed magnetic layer is reversed, high stability under high temperature conditions, and excellent strong-magnetic field resistance, an antiferromagnetic layer, a fixed magnetic layer, and a free magnetic layer are stacked, the antiferromagnetic layer is composed of a PtCr layer and an XMn layer (where X is Pt or Ir), the XMn layer is in contact with the fixed magnetic layer, and the fixed magnetic layer is made of iron, cobalt, an iron-cobalt alloy, or an iron-nickel alloy.

Embodiments of the present disclosure generally relate to spintronic devices, and more specifically to self-cooling spintronic devices. In an embodiment, a device is provided. The device includes a spintronic device having a first side and a second side opposite the first side, a first layer disposed on the first side, and a second layer disposed on the second side, the first layer having a Seebeck coefficient that is different from a Seebeck coefficient of the second layer.