A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

The invention relates to a process for fabricating a photonic chip including steps of transferring a die to an actual transfer region of the receiving substrate comprising a central region entirely covered by the die and a peripheral region having a free surface, a first waveguide lying solely in the central region, and a second waveguide lying in the peripheral region; depositing an etch mask on a segment of the die and around the actual transfer region; and dry etching a free segment of the die, the free surface of the peripheral region then being partially etched.

There is set forth herein a method including building a first photonics structure using, wherein the building the first photonics structure includes fabricating one or more photonics device.

An optical device includes a transition unit in which a first waveguide and a second waveguide are disposed in an overlapped manner such that a magnitude relationship of an effective refractive index between the vertical modes propagating the first waveguide and the vertical modes propagating the second waveguide is inverted at the positions of input and output. The transition unit allows, at the input, the second waveguide to be a single mode waveguide and allows, at the output, the second waveguide to be a multi-mode waveguide through which TM0 light in the maximum vertical mode and light in a higher-order mode propagate. The optical device includes a removing unit that allows the second waveguide to be a single mode waveguide through which the TM0 light propagates by removing the light in the higher-order mode from the light received from the transition unit.

A multilayer film includes a single-crystal silicon layer, a first layer containing Zr, a second layer containing ZrO.sub.2, and a third layer containing a perovskite oxide having an electrooptic effect. The first layer, the second layer, and the third layer are provided in this order above the single-crystal silicon layer, and the multilayer film is transparent to a wavelength to be used.

A waveguide structure comprising: a substrate; a waveguide layer on the substrate; a cladding layer in contact with a first side of the waveguide layer, the waveguide layer between the cladding layer and the substrate; and a first waveguide modifier layer comprising a first material for modifying a waveguide function of the waveguide layer, the first waveguide modifier layer in contact with the cladding layer and having a width along a first axis less than a width, parallel to the first axis, of the cladding layer, the first axis perpendicular to a second axis corresponding with a light propagation direction within the waveguide layer. There is a method of manufacturing a waveguide structure.

A semiconductor design that uses high refractive index material between low refractive index material. This structure may act as an optical waveguide.

The disclosed matter provides integrated metasurface devices for conversion between a waveguide mode and a free-space optical wave with a designer wavefront. In exemplary embodiments, the integrated metasurface devices include a thin waveguide, a waveguide taper, a leaky-wave metasurface defined within a high refractive index layer of dielectric material, and a low refractive index substrate. The device can manipulate all the four optical degrees of freedom of the free-space wavefront, namely: amplitude, phase, polarization orientation, and polarization ellipticity, by using a leaky-wave metasurface composed of meta-units with four structural degrees of freedom.

A multilayer waveguide coupler comprising a first grating and a second grating is provided. Each first copropagating waveguide of the first grating has a first periodically modulated width. Each second copropagating waveguide of the second grating has a second periodically modulated width. The second grating is positioned so that a phase offset is present between the first periodically modulated width of the first copropagating waveguides and the second periodically modulated width of the second copropagating waveguides. The grating spaced distance and phase offset are selected so that light diffracted out of the first copropagating waveguides and the second copropagating waveguides in the first direction interferes constructively to form the first light beam and light diffracted out of the first copropagating waveguides and the second copropagating waveguides in the second direction interferes destructively.

Aspects described herein include a method comprising bonding a photonic wafer with an electronic wafer to form a wafer assembly, removing a substrate of the wafer assembly to expose a surface of the photonic wafer or of the electronic wafer, forming electrical connections between metal layers of the photonic wafer and metal layers of the electronic wafer, and adding an interposer wafer to the wafer assembly by bonding the interposer wafer with the wafer assembly at the exposed surface. The interposer wafer comprises through-vias that are electrically coupled with the metal layers of one or both of the photonic wafer and the electronic wafer. The method further comprises dicing the wafer assembly to form a plurality of dies. A respective edge coupler of each die is optically exposed at an interface formed by the dicing.