A multilayer waveguide coupler comprising a first grating and a second grating is provided. Each first copropagating waveguide of the first grating has a first periodically modulated width. Each second copropagating waveguide of the second grating has a second periodically modulated width. The second grating is positioned so that a phase offset is present between the first periodically modulated width of the first copropagating waveguides and the second periodically modulated width of the second copropagating waveguides. The grating spaced distance and phase offset are selected so that light diffracted out of the first copropagating waveguides and the second copropagating waveguides in the first direction interferes constructively to form the first light beam and light diffracted out of the first copropagating waveguides and the second copropagating waveguides in the second direction interferes destructively.

Structures including a grating coupler and methods of fabricating a structure including a grating coupler. The structure includes structure includes a dielectric layer on a substrate, a first waveguide core positioned in a first level over the dielectric layer, and a second waveguide core positioned in a second level over the dielectric layer. The second level differs in elevation above the dielectric layer from the first level. The first waveguide core includes a tapered section. The structure further includes a grating coupler having a plurality of segments positioned in the second level adjacent to the second waveguide core. The segments of the grating coupler and the tapered section of the first waveguide core are positioned in an overlapping arrangement.

Structures including a grating coupler and methods of fabricating a structure including a grating coupler. The structure includes structure includes a dielectric layer on a substrate, a first waveguide core positioned in a first level over the dielectric layer, and a second waveguide core positioned in a second level over the dielectric layer. The second level differs in elevation above the dielectric layer from the first level. The first waveguide core includes a tapered section. The structure further includes a grating coupler having a plurality of segments positioned in the second level adjacent to the second waveguide core. The segments of the grating coupler and the tapered section of the first waveguide core are positioned in an overlapping arrangement.

An integrated circuit (IC) package having multiple ICs is provided. The IC package includes a printed circuit board (PCB) having a cutout region and a substrate disposed above the PCB. The substrate includes a first cavity on a first surface of the substrate. The IC package also includes a first IC disposed on a second surface of the substrate and in the cutout region of the PCB, The IC package further includes a second IC disposed above the substrate, and a first device disposed on the second IC and in the first cavity on the first surface of the substrate.

An integrated circuit (IC) package having multiple ICs is provided. The IC package includes a printed circuit board (PCB) having a cutout region and a substrate disposed above the PCB. The substrate includes a first cavity on a first surface of the substrate. The IC package also includes a first IC disposed on a second surface of the substrate and in the cutout region of the PCB, The IC package further includes a second IC disposed above the substrate, and a first device disposed on the second IC and in the first cavity on the first surface of the substrate.

A photonic integrated circuit chip includes vertical grating couplers defined in a first layer. Second insulating layers overlie the vertical grating coupler and an interconnection structure with metal levels is embedded in the second insulating layers. A cavity extends in depth through the second insulating layers all the way to an intermediate level between the couplers and the metal level closest to the couplers. The cavity has lateral dimensions such that the cavity is capable of receiving a block for holding an array of optical fibers intended to be optically coupled to the couplers.

Hybrid optical integration places very strict manufacturing tolerances and performance requirements upon the multiple elements to exploit passive alignment techniques as well as having additional processing requirements. Alternatively, active alignment and soldering/fixing where feasible is also complex and time consuming with 3, 4, or 6-axis control of each element. However, microelectromechanical (MEMS) systems can sense, control, and activate mechanical processes on the micro scale. Beneficially, therefore the inventors combine silicon MEMS based micro-actuators with silicon CMOS control and drive circuits in order to provide alignment of elements within a silicon optical circuit either with respect to each other or with other optical elements hybridly integrated such as compound semiconductor elements. Such inventive MEMS based circuits may be either maintained as active during deployment or powered off once the alignment has been “locked” through an attachment/retention/latching process.

A guide transition device including a light source designed to generate a light beam, a light input port on a first plane and coupled to receive the light beam from the light source, a light output port on a second plane different than the first plane, the light output port designed to couple a received light beam to output equipment and plane shifting apparatus coupled to receive the light beam from the light input port on the first plane and to shift or transfer the light beam to the second plane. The plane shifting apparatus is coupled to transfer the light beam to the light output port on the second plane.

A method of manufacturing an electro-optically active device. The method comprising the steps of: etching a cavity on a silicon-on-insulator wafer; providing a sacrificial layer adjacent to a substrate of a lll-V semiconductor wafer; epitaxially growing an electro-optically active structure on the lll-V semiconductor wafer; etching the epitaxially grown optically active structure into an electro-optically active mesa; disposing the electro-optically active mesa in the cavity of the silicon-on-insulator wafer and bonding a surface of the electro-optically active mesa, which is distal to the sacrificial layer, to a bed of the cavity; and removing the sacrificial layer between the substrate of the lll-V semiconductor wafer and the electro-optically active mesa.

An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°.