According to an aspect, an optical system includes a laser diode configured to emit optical signals and at least two size-switchable broken racetrack ring resonators optically coupled to an optical waveguide, where each broken racetrack ring resonator is configured to exhibit a resonant wavelength. The optical system also includes a tuning arrangement associated with the broken racetrack ring resonators, where the tuning arrangement includes a micro electro-mechanical system (MEMS) or nano electro-mechanical system (NEMS) actuator mechanically coupled to a first portion of a first one of the broken racetrack ring resonators and configured to mechanically move the first portion so as to change the resonant wavelength of the first one of the broken racetrack ring resonators.

A method of producing a heterogeneous photonic integrated circuit includes integrating at least one III-V hybrid device on a source substrate having at least a top silicon layer, and transferring by transfer-printing or by flip-chip bonding the III-V hybrid device and at least part of the top silicon layer of the source substrate to a semiconductor-on-insulator or dielectric-on-insulator host substrate.

An integrated optical device, including: a semiconductor body delimited by a top surface; and at least one buried cavity, which extends in the semiconductor body, at a distance from the top surface, so as to delimit at the bottom a front semiconductor region, which functions as an optical guide.

Embodiments herein relate to photonic integrated circuits with an on-chip optical isolator. A photonic transmitter chip may include a laser and an on-chip isolator optically coupled with the laser that includes an optical waveguide having a section coupled with a magneto-optic liquid phase epitaxy grown garnet film. In some embodiments, a cladding may be coupled with the garnet film, the on-chip isolator may be arranged in a Mach-Zehnder interferometer configuration, the waveguide may include one or more polarization rotators, and/or the garnet film may be formed of a material from a rare-earth garnet family. Other embodiments may be described and/or claimed.

A switch module includes a switch integrated circuit (IC), an InP chip, and a planar lightwave circuit (PLC). The InP chip may include a plurality of light sources, an optical splitter, and a plurality of modulators.

Aspects described herein include an optical apparatus comprising a multiple-stage arrangement of two-mode Bragg gratings comprising: at least a first Bragg grating of a first stage. The first Bragg grating is configured to transmit a first two wavelengths and to reflect a second two wavelengths of a received optical signal. The optical apparatus further comprises a second Bragg grating of a second stage. The second Bragg grating is configured to transmit one of the first two wavelengths and to reflect an other of the first two wavelengths. The optical apparatus further comprises a third Bragg grating of the second stage. The third Bragg grating is configured to transmit one of the second two wavelengths and to reflect an other of the second two wavelengths.

An embodiment optical test circuit includes a first optical circuit and a second optical circuit formed on a substrate, an input optical waveguide optically connected to the first optical circuit and the second optical circuit, and an output optical waveguide optically connected to the first optical circuit and the second optical circuit. The optical test circuit also includes a light emitting diode optically connected to the input optical waveguide, and a photodiode optically connected to the output optical waveguide.

A distributed feedback laser integrated on silicon comprising a combination of a waveguide of a first material and a laser diode a second material, different from the first material, wherein the laser diode comprises a plurality of regularly spaced metalized grating elements which form a single longitudinal mode; wherein the waveguide comprises a plurality of waveguide elements separated by metalized regions; and wherein the metalized grating elements and the metalized regions are adapted to be coupled to one another to form the distributed feedback laser.

An optical transceiver by hybrid multichip integration. The optical transceiver includes a PCB with a plurality of prefabricated surface bonding sites. A first chip includes a FOWLP package of multiple electronics devices embedded in a dielectric molding layer overlying a dielectric redistribution layer is disposed on the PCB by respectively bonding a plurality of conductor balls between the dielectric redistribution layer and the plurality of prefabricated surface bonding sites while exposing soldering material filled in multiple through-mold vias (TMVs) in the dielectric molding layer. The optical transceiver further includes a second chip configured as a Sipho die comprising photonics devices embedded in a SOI wafer substantially free from any electronics device process. The second chip is stacked over the first chip with multiple conductor bumps being bonded respectively to the soldering material in the multiple TMVs.

A grating coupler having first and second ends for coupling a light beam to a waveguide of a chip includes a substrate configured to receive the light beam from the first end and transmit the light beam through the second end, the substrate having a first refractive index n1, a grating structure having curved grating lines arranged on the substrate, the grating structure having a second refractive index n1, wherein the curved grating lines have line width w and height d and are arranged by a pitch Λ, wherein the second refractive index n2 is less than first refractive index n1, and a cladding layer configured to cover the grating structure, wherein the cladding layer has a third refractive index n3.