There is provided an optical waveguide chip. In the optical waveguide chip, an optical waveguide circuit includes a substrate, a lower clad layer laminated on the substrate, a core layer that is laminated on the lower clad layer and corresponds to a propagation path of an optical signal, and an upper clad layer laminated on the core layer; the upper and lower clad layers in a region that does not correspond to the propagation path of the optical signal are removed across to an edge of the chip; the region from which the upper and lower clad layers have been removed is filled with a light absorbing material; and a height of the filled light absorbing material is higher than a height of an uppermost surface of the upper clad layer.

Disclosed are an optical phased array chip and a method of manufacturing the same. The optical phased array chip includes a plurality of optical switches and a plurality of optical phased arrays implemented on a single integrated circuit, wherein the single integrated circuit includes a silicon substrate, a lower layer formed on an upper portion of the silicon substrate, a silicon layer formed on an upper portion of the lower layer, a first upper layer, a second upper layer and a third upper layer sequentially arranged on the silicon layer, and an electrode that penetrates through the first upper layer while being grounded to the silicon layer and is formed on an upper portion of the first upper layer.

A polarization-independent, optical circulator is formed in silicon photonics. The polarization-independent, optical circulator uses an optical splitter having two couplers and two waveguides joining the two couplers. One of the two waveguides is thinner than the other to create a large effective index difference between TE and TM modes transmitted through the one waveguide. Polarization rotators, including reciprocal and/or non-reciprocal rotators, are further used to create the optical circulator.

Integration method of a large-scale silicon-based lithium niobate film electro-optic modulator array. By using the method, the difficulty of a fabrication process of a lithium niobate crystal layer is reduced, requirements on precision of bonding lithium niobate and silicon is reduced, and fabrication and bonding of the large-scale array lithium niobate crystal layer can be completed at one time, so that production efficiency of the silicon-based lithium niobate film electro-optic modulator array is greatly improved; through design and optimization of the structure of the silicon crystal layers, light can be naturally alternated and mutually transmitted in silicon waveguides and lithium niobate waveguides, and a high-performance electro-optic modulation effect of the lithium niobate film is achieved.

Provided is a novel beam delivery system for quantum computing applications that includes a beam delivery photonic integrated circuit on a chip and an optical relay assembly. The beam delivery photonic integrated circuit on a chip may contain one or more layers, and a layer may contain one or more inputs connecting one or more outputs. The optical relay assembly receives a beam or beams from one or more outputs from a layer of the beam delivery photonic integrated circuit. The optical relay assembly focuses each received beam on a corresponding position of an atomic object confinement apparatus.

In an optical switch array on which optical switches that require individual electric wires are integrated, the present invention provides an optical switch array and a multi-cast switch in which the electric wires are shortened by optimizing the arrangement of the optical circuit portion. In the optical switch array in which three arrays of 1×4 switch circuits are disposed in parallel, the position where each optical switch is disposed is sequentially shifted by Dy in the y axis direction. That is, in the case where an adjacent 1×4 optical switch circuit exists on both sides, the 1×4 optical switch located there between is located at the center of the two 1×4 optical switch circuits, which are adjacent in the y axis direction. Each of the three 1×4 optical switch circuits that are arrayed are disposed at a position shifted from the adjacent 1×4 optical switch circuit by Dy in the y axis direction, in accordance with the positional coordinate in the x axis direction, and the electric wires at the ground side are shared such that each optical switch circuit is located sequentially shifted by Dy in the −y axis direction.

A semiconductor optical device includes a substrate containing silicon and including terraces, a waveguide, and a diffraction grating in different regions in plan view; and a semiconductor device formed of a III-V compound semiconductor and having an optical gain, the semiconductor device being joined to the diffraction grating and the terraces and being in contact with an upper surface of the substrate. The waveguide is optically coupled to the diffraction grating in a direction in which the waveguide extends. The terraces are located on both sides of the waveguide and the diffraction grating in a direction crossing the direction in which the waveguide extends. The substrate has a groove between each of the terraces and the waveguide. The diffraction grating is continuously connected to the terraces in the direction crossing the direction in which the waveguide extends.

A polarization splitter-rotator (PSR) is described. The PSR having a silicon nitride based waveguide to split and rotate an optical beam. The silicon nitride based waveguide having a first silicon nitride segment including a first layer and a second layer coupled with the first layer.

Disclosed herein is a pulse repetition rate multiplier including a photonic integrated circuit (PIC) including cascading Mach-Zehnder interferometers (MZIs). An input may be connected to one end of the PIC and an output may be connected to the other end of the PIC such that a signal from the input runs through the cascading MZIs and out the output. The input may be configured to receive an input pulsed signal and the output may be configured to output a repetition rate multiplied signal. Advantageously, using a PIC as opposed to an optical fiber-based pulse rate multiplier allows for accurate fabrication of a pulse repetition rate multiplier configured to accept higher frequency pulsed signals.

The chip includes multiple component assemblies that are each configured to generate and steer a direction of a LIDAR output signal that exits from the chip. The LIDAR output signals generated by different components assemblies have different wavelengths.