A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

A multi-level semiconductor device, the device including: a first level including integrated circuits; a second level including a structure designed to conduct electromagnetic waves, where the second level is disposed above the first level, where the integrated circuits include single crystal transistors; and an oxide layer disposed between the first level and the second level, where the integrated circuits include at least one processor, where the second level is bonded to the oxide layer, and where the bonded includes oxide to oxide bonds.

A method of fabricating a high-density array of holes in glass is provided, comprising providing a glass piece having a front surface, then irradiating the front surface of the glass piece with a UV laser beam focused to a focal point within +/−100 μm of the front surface of the glass piece most desirably within +/−50 μm of the front surface. The lens focusing the laser has a numerical aperture desirably in the range of from 0.1 to 0.4, more desirably in the range of from 0.1 to 0.15 for glass thickness between 0.3 mm and 0.63 mm, even more desirably in the range of from 0.12 to 0.13, so as to produce open holes extending into the glass piece 100 from the front surface 102 of the glass piece, the holes having an diameter the in range of from 5 to 15 μm, and an aspect ratio of at least 20:1. For thinner glass, in the range of from 0.1-0.3 mm, the numerical aperture is desirably from 0.25 to 0.4, more desirably from 0.25 to 0.3, and the beam is preferably focused to within +/−30 μm of the front surface of the glass. The laser is desirable operated at a repetition rate of about 15 kHz or below. An array of holes thus produced may then be enlarged by etching. The front surface may be polished prior to etching, if desired.

A PhC all-optical multistep-delay self-AND-transformation logic gate comprising PhC structure unit, an optical switch unit, a memory or delayer, a wave absorbing load, a D-type flip-flop unit and a NOT logic gate; an logic-signal is connected with the input port of a two-branch waveguide whose two output ports are respectively connected with the memory input port and the logic-signal input port of the optical switch unit; two intermediate-signal output port of the optical switch unit are respectively connected with the intermediate-signal input port of the PhC structure unit and said wave absorbing load; a clock-signal CP is connected with the input port of a three-branch waveguide whose three output ports are respectively connected with the NOT logic-gate input port, the first clock-signal input port of the PhC structure unit, and the second clock-signal input port of the optical switch unit.

A photonic crystal (PhC) all-optical OR-transformation logic gate, which comprises an optical-switch unit (OSU), a PhC-structure unit, a reference light, a wave-absorbing load (WAL) and a D-type flip-flop (DFF) unit; two system-signal-input ports are respectively connected with a first logic-signal X.sub.1 and a second logic-signal X.sub.2; the reference light is connected with the reference-light-input port of the OSU; three intermediate-signal-output ports are respectively connected with two intermediate-signal-input ports of the PhC-structure unit and the WAL; a clock-signal CP through the input port of a two-branch waveguide are respectively connected with a first clock-signal CP input port of the OSU and a second clock-signal-CP-input port of the DFF unit; the signal-output port of the PhC-structure unit is connected with the D-signal-input port of the DFF unit. The structure of the present invention is compact in structure, strong in anti-interference capability and ease of integration with other optical-logic elements.

A PhC all-optical multistep-delay self-OR-transformation logic gate including an optical switch unit, a PhC structure unit, a reference-light, a memory or delayer, a D-type flip-flop unit and a wave absorbing load; a logic signal X is connected to the input port of a two-branch waveguide whose two output ports are respectively connected with the input port of the memory and the logic-signal input port of the optical switch unit; the output port of the memory is connected with the delay-signal input port of the optical switch unit; the reference-light source is connected with the reference-light input port of the optical switch unit whose three intermediate-signal output ports are respectively connected with the first and second intermediate-signal input ports of the PhC structure unit and the wave absorbing load; and the output port of the PhC structure unit is connected with the D-signal input port of the D-type flip-flop unit.

The present invention discloses a photonic crystal (PhC) all-optical multistep-delay AND-transformation logic gate, which comprises a PhC-structure unit, an optical-switch unit (OSU), a wave-absorbing load, a NOT-logic gate, a D-type flip-flop (DFF) and a memory or delayer; an input port of a memory is connected with a first logic-signal X.sub.1, and an output port of the memory is connected with the delay-signal-input port of the OSU; a second logic-signal X.sub.2 is connected with the logic-signal-input port of the OSU; two intermediate-signal-output ports of the OSU are respectively the intermediate-signal-input port of the PhC-structure unit and the wave-absorbing load; a clock-signal CP is connected with the input port of a three-branch waveguide; the signal-output port of the PhC-structure unit is connected with the D-signal-input port of the DFF unit. The structure of the present invention is compact in structure and ease of integration with other optical-logic elements.

The present invention discloses a high-contrast photonic crystal AND logic gate, comprising a five-port two-dimensional photonic crystal, a nonlinear cavity unit and a Y-shape AND logic gate unit; and it includes a reference-light input port, two signal-input ports, a system signal-output port and an idle port; the nonlinear cavity unit is coupled with the Y-shape AND logic gate unit. The structure of the present invention, which is compact in structure and ease of integration with other optical logic elements, not only can realize the functions of the high-contrast photonic and logic gate, but also has high contrast of high and low logic output; and is widely applicable to optical communication bands.

A photonic structure is provided. The photonic structure includes a first oxide layer in a semiconductor substrate, a second oxide layer over an upper surface of the semiconductor substrate and an upper surface of the first oxide layer, and an optical coupling region over an upper surface of the second oxide layer. The optical coupling region is made of silicon, and an area of the optical coupling region is confined within an area of the first oxide layer in a plan view.

Embodiments of the disclosure provide an integrated circuit (IC) structure, including an absorber layer separated from an optical grating coupler by a cladding material. The absorber is positioned to receive light reoriented through the optical grating coupler.