Boundary cells are used to abut two standard cell blocks. A standard cell block for an integrated circuit device includes a first standard cell, and a first boundary cell disposed adjacent to the first standard cell and along a boundary of the standard cell block. The first boundary cell includes a first region, a first dummy region, and a first layer extension region. The first region is abutted with the first standard cell and the first dummy region. The first dummy region is abutted with the first layer extension region. The first region and the first dummy region each include one or more non-functional layers. The first region, the first dummy region, and the first layer extension region are of a first semiconductor type.

Boundary cells are used to abut two standard cell blocks. A standard cell block for an integrated circuit device includes a first standard cell, and a first boundary cell disposed adjacent to the first standard cell and along a boundary of the standard cell block. The first boundary cell includes a first region, a first dummy region, and a first layer extension region. The first region is abutted with the first standard cell and the first dummy region. The first dummy region is abutted with the first layer extension region. The first region and the first dummy region each include one or more non-functional layers. The first region, the first dummy region, and the first layer extension region are of a first semiconductor type.

A method of fabricating a semiconductor device includes designing a layout of the semiconductor device, performing a routing step using a routing tool, performing an optical proximity correction (OPC) on the designed layout, and performing a photolithography process on a substrate using a photomask manufactured by the layout corrected by the OPC. Performing the routing step includes generating and storing an X×Y via structure in the routing tool, each of X and Y being an integer between 1 and 20, providing a low-level line and a high-level line, providing the X×Y via structure on a region where the low-level line and the high-level line overlap, and providing at least one routing line that passes through the X×Y via structure.

A method of fabricating a semiconductor device includes designing a layout of the semiconductor device, performing a routing step using a routing tool, performing an optical proximity correction (OPC) on the designed layout, and performing a photolithography process on a substrate using a photomask manufactured by the layout corrected by the OPC. Performing the routing step includes generating and storing an X×Y via structure in the routing tool, each of X and Y being an integer between 1 and 20, providing a low-level line and a high-level line, providing the X×Y via structure on a region where the low-level line and the high-level line overlap, and providing at least one routing line that passes through the X×Y via structure.

Routing a circuit path includes selecting pixels on the circuit path based at least on penalty values associated with the pixels. Pixels on a rejected circuit path are penalized by increasing their penalty values. Re-routing a rejected circuit path allows for pixels on previously rejected paths to be considered when rerouting the rejected circuit path, rather than being eliminated outright.

A method includes acquiring a design layout of a standard cell, extracting feature information of one or more vias in the standard cell from the design layout, performing a circuit simulation to obtain first simulation outputs of the standard cell for input patterns by applying a first abnormal resistance value as a parasitic resistance value of a first via among the one or more vias, the first abnormal resistance value being different from a nominal parasitic resistance value of the first via, determining whether the first simulation outputs match corresponding expected outputs of the standard cell for the input patterns, and in response to one or more simulation outputs among the first simulation outputs not matching the corresponding expected outputs, recording one or more defect types for the first via having the first abnormal resistance value along with corresponding input patterns and corresponding simulation outputs.

A semiconductor device includes a substrate having a plurality of active patterns. A plurality of gate electrodes intersects the plurality of active patterns. An active contact is electrically connected to the active patterns. A plurality of vias includes a first regular via and a first dummy via. A plurality of interconnection lines is disposed on the vias. The plurality of interconnection lines includes a first interconnection line disposed on both the first regular via and the first dummy via. The first interconnection line is electrically connected to the active contact through the first regular via. Each of the vias includes a via body portion and a via barrier portion covering a bottom surface and sidewalls of the via body portion. Each of the interconnection lines includes an interconnection line body portion and an interconnection line barrier portion covering a bottom surface and sidewalls of the interconnection line body portion.

Manufacturing a semiconductor chip based on redefining tolerance rules to create an otherwise prohibited structure including redefining a tolerance rule to permit creation of a minimum area metal trench structure violating the tolerance rule during a routing operation; and fabricating the minimum area metal trench structure on the semiconductor substrate based on the redefined tolerance rule.

A method of preparing a layout for manufacturing a semiconductor device includes receiving a layout that includes a plurality of metal interconnects, identifying a first set of metal interconnects from the metal interconnects corresponding to a first patterning process and a second set of metal interconnects from the metal interconnects corresponding to a second patterning process, identifying a first set of floating metal portions in the first set of metal interconnects and a second set of floating metal portions in the second set of metal interconnects, and removing the second set of floating metal portions from the layout, while the first set of floating metal portions remains in the layout.

A method of preparing a layout for manufacturing a semiconductor device includes receiving a layout that includes a plurality of metal interconnects, identifying a first set of metal interconnects from the metal interconnects corresponding to a first patterning process and a second set of metal interconnects from the metal interconnects corresponding to a second patterning process, identifying a first set of floating metal portions in the first set of metal interconnects and a second set of floating metal portions in the second set of metal interconnects, and removing the second set of floating metal portions from the layout, while the first set of floating metal portions remains in the layout.