The present invention provides a thermal hardware-based data security device that is capable of physically, hardware-wise, and permanently erasing data stored in a memory and of enabling a storage device to be reused, and a method thereof. The thermal hardware-based data security device includes: a memory chip capable of storing data; a heater module which supplies heat to permanently erase the data stored in a memory cell within the memory chip; and a switch module which short-circuits the heater module between a power supply unit and a ground when switched on, and thus, controls the heater module to be operated.

An electronic switching element is described having, in sequence, a first electrode, a molecular layer bonded to a substrate, and a second electrode. The molecular layer contains compounds of formula I, R.sup.1-(A.sup.1-Z.sup.1).sub.rB.sup.1(Z.sup.2-A.sup.2).sub.s-Sp-G, wherein A.sup.1, A.sup.2, B.sup.1, Z.sup.1, Z.sup.2, Sp, G, r, and s are as defined herein, in which a mesogenic radical is bonded to the substrate via a spacer group, Sp, by means of an anchor group, G. The switching element is suitable for production of components that can operate as a memristive device for digital information storage.

Programmable memory devices having a cross-point array of polymer junctions with individually-programmed conductances are provided. In one aspect, a method of forming a memory device includes: forming first metal lines on an insulating substrate; forming polymeric resistance elements on the first metal lines; and forming second metal lines over the polymeric resistance elements with a single one of the polymeric resistance elements present at each intersection of the first/second metal lines forming a cross-point array. A memory device and a method of operating a memory device are also provided.

Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.

A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H.sub.d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

Provided is a memory- and logic device-integrated soft electronic system, the memory- and logic device-integrated soft electronic system including: a substrate 100; a plurality of bar-shaped first electrodes 110 stacked on the substrate; a resistance-variable material layer 120 coated on the lower electrode; and a plurality of bar-shaped second electrodes 130 stacked on the resistance-variable material layer 120, wherein the first electrode and the second electrode cross each other.

Memory devices are provided having a cross-point array of polymer junctions with individually-programmed conductances that can be reset. In one aspect, a memory device is provided. The memory device includes: bottom metal lines; top metal lines; and polymer junctions in between the bottom metal lines and the top metal lines, wherein the polymer junctions include an organic polymer doped with a spiropyran and an acid. A method of forming and a method of operating the memory device are also provided.

Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages configured to be refreshed according to a refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

Disclosed is a molecularly imprinted polymer for storing a defined value of a numerical code, more particularly a binary code, in the molecular imprints of said polymer, and a method for the production of said polymer. The molecular imprinting process uses suitable templates comprising a defined sequence of at least two different structural units, each having a different chemical functionality.

A molecular scrivener reads data from or writes data to a macromolecule and includes: a pair of shielding electrodes; a scrivener electrode between the first and second shielding electrodes and that electrically floats at a third potential that, in an absence of a charged or dipolar moiety of the macromolecule, is intermediate between the first and second potentials and changes in a presence of the charged or dipolar moiety; a dielectric layer interposed between shielding electrodes and the scrivener electrode; and a nanopore that communicates the macromolecule through the electrodes and dielectric layers. Reading data from or writing data to a macromolecule includes: sequentially receiving, at the scrivener electrode, individual moieties of the macromolecule so that the third potential responds to individual moieties; communicating the macromolecule from the scrivener electrode to the second shielding electrode and from second shielding electrode to expel the macromolecule from the nanopore.