A method of switching a phase-change device (Device), including changing phase of the Device from a semiconducting 2H phase to a new 2H.sub.d phase with a higher conductivity, the Device having an active material with a thickness including a phase transition material to thereby transition the Device from a high resistive state (HRS) to a low resistive state (LRS) by application of a set voltage and further to return the Device from the LRS back to the HRS by application of a reset voltage.

A system and method of storing and reading digital data, including providing a nanopore polymer memory (NPM) device having at least one memory cell comprising at least two addition chambers each arranged to add a unique chemical construct (or codes) to a polymer (or DNA) string when the polymer enters the respective addition chamber, the data comprising a series of codes; successively steering the polymer from deblock chambers through the nanopore into the addition chambers to add codes to the polymer to create the digital data pattern on the polymer; and accurately controlling the bit rate of the polymer using a servo controller. The device may have loading chamber(s) to load (or remove) the polymer into/from the deblock chambers through at least one micro-hole. The cell may be part of a memory system that stores and retrieves raw data and allows for remote retrieval and conversion. The cell may store multi-bit data having a plurality of states for the codes.

Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages having an refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

An electronic component (10) comprising a plurality of switching elements (1) which comprise, in this sequence, a first electrode (16), a molecular layer (18) bonded to a substrate, and a second electrode (20), where the molecular layer essentially consists of molecules (M) which contain a connecting group (V) and an end group (E) having a polar or ionic function, is suitable as memristive device for digital information storage.

A reconfigurable circuit comprising: a complementary resistive switch; a write circuit to configure the complementary resistive switch; a read circuit to get ON/OFF information of the complementary resistive switch; a register to store ON/OFF information of the complementary resistive switch.

A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a spherical core-shell structure containing: a spherical conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. The resistance-switchable material is capable of exhibiting complementary resistive switching characteristics with improved reliability and stability as symmetrical uniform filament current paths are formed in respective resistive layers adjacent to two electrodes with the conductive core of the complementary resistance-switchable filler at the center due to the electric field control effect by the spherical complementary resistance-switchable filler.

A memory device according to an embodiment includes a first conductive layer, a second conductive layer, a variable resistance layer disposed between the first conductive layer and the second conductive layer, and an organic molecular layer disposed between the variable resistance layer and the second conductive layer and containing organic molecules. Each of the organic molecules includes a first fused polycyclic unit having a first HOMO level, a second fused polycyclic unit having a second HOMO level higher in energy than the first HOMO level, and a third fused polycyclic unit disposed between the first fused polycyclic unit and the second fused polycyclic unit. The third fused polycyclic unit has a third HOMO level higher in energy than the first HOMO level and the second HOMO level.

Disclosed herein are redox-active 6-oxoverdazyl polymers having structures (S1) and (S2) synthesized via ring-opening metathesis polymerization (ROMP) and their solution, bulk, and thin-film properties investigated. Detailed studies of the ROMP method employed confirmed that stable radical polymers with controlled molecular weights and narrow molecular weight distributions (<1.2) were produced. Thermal gravimetric analysis of a representative example of the title polymers demonstrated stability up to 190 C., while differential scanning calorimetry studies revealed a glass transition temperature of 152 C. An ultrathin memristor device was produced using these polymers, namely a 10 nm homogeneous thin film of poly-[1,5-diisopropyl-3-(cis-5-norbornene-exo-2,3-dicarboxiimide)-6-oxoverdazyl] (P6OV), a poly-radical with three tunable charge states per each radical monomer: positive, neutral and negative.

Some embodiments include memory devices having a wordline, a bitline, a memory element selectively configurable in one of three or more different resistive states, and a diode configured to allow a current to flow from the wordline through the memory element to the bitline responsive to a voltage being applied across the wordline and the bitline and to decrease the current if the voltage is increased or decreased. Some embodiments include memory devices having a wordline, a bitline, memory element selectively configurable in one of two or more different resistive states, a first diode configured to inhibit a first current from flowing from the bitline to the wordline responsive to a first voltage, and a second diode comprising a dielectric material and configured to allow a second current to flow from the wordline to the bitline responsive to a second voltage.

Methods, systems and devices for reading data stored in a polymer (e.g., DNA) and for verifying the sequence of a polymer synthesized in situ in a nanopore-based chip, include providing a resonator having an inductor and a cell, the cell having a nanopore and a polymer that can traverse through the nanopore, the resonator having an AC output voltage frequency response at a probe frequency in response to an AC input voltage at the probe frequency, providing the AC input voltage having at least the probe frequency, and monitoring the AC output voltage at least at the probe frequency, the AC output voltage at the probe frequency being indicative of the data stored in the polymer at the time of monitoring, wherein the polymer includes at least two monomers having different properties causing different resonant frequency responses.