Disclosed is a molecularly imprinted polymer for storing a defined value of a numerical code, more particularly a binary code, in the molecular imprints of said polymer, and a method for the production of said polymer. The molecular imprinting process uses suitable templates comprising a defined sequence of at least two different structural units, each having a different chemical functionality.

A method of storing information using monomers such as nucleotides is provided including converting a format of information into a plurality of bit sequences of a bit stream with each having a corresponding bit barcode, converting the plurality of bit sequences to a plurality of corresponding oligonucleotide sequences using one bit per base encoding, synthesizing the plurality of corresponding oligonucleotide sequences on a substrate having a plurality of reaction locations, and storing the synthesized plurality of corresponding oligonucleotide sequences.

Provided are a method for fabricating nano structures which includes: preparing a substrate; preparing a polymer including a plurality of metal atoms; applying the polymer to the substrate to attach the metal atoms onto the substrate; and making one or more metallic nano particles from the metal atoms.

The invention relates to a process for the production of an electronic component comprising a self-assembled monolayer (SAM) using compounds of the formula I
R.sup.1-(A.sup.1-Z.sup.1).sub.r(B.sup.1).sub.n(Z.sup.2-A.sup.2).sub.s-Sp-G(I)
in which the groups occurring have the meanings defined in Claim 1; the present invention furthermore relates to the use of the components in electronic switching elements and to compounds for the production of the SAM.

A memory device may be provided that includes: a substrate; a coupling layer which is located on the substrate and has electrical conductivity; a meta-atomic layer which is located on or under the coupling layer; a memory layer which is located on the meta-atomic layer; and an electrode layer which is located on the memory layer and has electrical conductivity. The memory layer is composed of a material which produces spontaneous polarization at a voltage equal to or higher than a predetermined voltage. Through this, the memory device can be electrically driven and can continuously maintain modulated optical characteristics. Also, the memory device according to the embodiment of the present invention can modulate optical characteristics by multiple electrical inputs.

Several embodiments of memory devices and systems with selective page-based refresh are disclosed herein. In one embodiment, a memory device includes a controller operably coupled to a main memory having at least one memory region comprising a plurality of memory pages. The controller is configured to track, in one or more refresh schedule tables stored on the memory device and/or on a host device, a subset of memory pages in the plurality of memory pages having an refresh schedule. In some embodiments, the controller is further configured to refresh the subset of memory pages in accordance with the refresh schedule.

A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a spherical core-shell structure containing: a spherical conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. The resistance-switchable material is capable of exhibiting complementary resistive switching characteristics with improved reliability and stability as symmetrical uniform filament current paths are formed in respective resistive layers adjacent to two electrodes with the conductive core of the complementary resistance-switchable filler at the center due to the electric field control effect by the spherical complementary resistance-switchable filler

The present invention provides a thermal hardware-based data security device that is capable of physically, hardware-wise, and permanently erasing data stored in a memory and of enabling a storage device to be reused, and a method thereof. The thermal hardware-based data security device includes: a memory chip capable of storing data; a heater module which supplies heat to permanently erase the data stored in a memory cell within the memory chip; and a switch module which short-circuits the heater module between a power supply unit and a ground when switched on, and thus, controls the heater module to be operated.

A memory cell includes an input coupled to a read line, an output coupled to a circuit ground, a bi-polar memristor, and at least one address switch coupled to an address line to select the memory cell. A memory includes the bi-polar memristor and a one-way current conducting device, wherein the one-way current conducting device is positioned between the memristor cell output and the circuit ground, or between the read line and the memristor cell input.

One example method includes encoding data as a polysaccharide structure, synthesizing the polysaccharide structure to create polysaccharide storage media that comprises the data, and storing the polysaccharide storage media. The example method may also include receiving a read request directed to the polysaccharide storage media, mapping the polysaccharide structure to create a map in response to the read request, traversing the map of the polysaccharide structure to determine an X-base number, and obtaining the data by converting the X-base number to a binary form.