Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor word line characteristics. In one embodiment, the memory device includes a memory array including a word line (e.g., a local word line) and a word line driver coupled thereto. When the memory device activates the word line driver, the memory device may generate a diagnostic signal in response to the word line voltage reaching a threshold. Further, the memory device may generate a reference signal to compare the diagnostic signal with the reference signal. In some cases, the memory device may generate an alert signal based on comparing the diagnostic signal with the reference signal if the diagnostic signal indicates a symptom of degradation in the word line characteristics. The memory device may implement certain preventive and/or precautionary measures upon detecting the symptom.

Self-repair logic for stacked memory architecture. An embodiment of a memory device includes a memory stack having one or more memory die elements, including a first memory die element, and a system element coupled with the memory stack. The first memory die element includes multiple through silicon vias (TSVs), the TSVs including data TSVs and one or more spare TSVs, and self-repair logic to repair operation of a defective TSV of the plurality of data TSVs, the repair of operation of the defective TSV including utilization of the one or more spare TSVs.

A memory subsystem has multiple memory devices coupled to a command/address line and an error alert line, the error alert line delay-compensated to provide deterministic alert signal timing. The command/address line and the error alert line are connected between the memory devices and a memory controller that manages the memory devices. The command/address line is driven by the memory controller, and the error alert line is driven by the memory devices.

A memory subsystem has multiple memory devices coupled to a command/address line and an error alert line, the error alert line delay-compensated to provide deterministic alert signal timing. The command/address line and the error alert line are connected between the memory devices and a memory controller that manages the memory devices. The command/address line is driven by the memory controller, and the error alert line is driven by the memory devices.

Writing time is shortened even in a memory writing time for each access unit is not constant. A writing time prediction information holding unit holds writing time prediction information for predicting the writing time in a plurality of memory modules for each of a plurality of memory modules. A request selecting unit preferentially selects a write request of which longer writing time is predicted out of a plurality of write requests requiring writing in each of a plurality of memory modules on the basis of the writing time prediction information.

Memories, and their operation, might include a plurality of content addressable memory (CAM) cells each for storing a respective data value, a match signal generator configured to generate an indication whether each CAM cell of the plurality of CAM cells indicates a match between its respective data value and a respective received signal value, and a plurality of storage elements each for storing a respective data value, wherein each storage element of the plurality of storage elements corresponds to a respective CAM cell of the plurality of CAM cells in a one-to-one relationship, and wherein each storage element of the plurality of storage elements is responsive to the indication of the match signal generator to generate a data signal indicative of the respective data value of that storage element if a match of their corresponding CAM cells is indicated.

The present disclosure includes systems, apparatuses, and methods for improving safety and correctness of data reading in flash memory devices associated with System-on-Chips. An example may include a plurality of sub-arrays, a plurality of memory blocks in each sub-array of the plurality of sub-arrays, a plurality of memory rows in each memory block of the plurality of memory blocks, and a plurality of extended pages in each memory row of the plurality of memory rows, wherein each extended page of the plurality of extended pages includes a group of data, an address, and an error correction code (ECC).

Methods, apparatus, systems and articles of manufacture are disclosed facilitate read-modify-write support in a coherent victim cache with parallel data paths. An example apparatus includes a random-access memory configured to be coupled to a central processing unit via a first interface and a second interface, the random-access memory configured to obtain a read request indicating a first address to read via a snoop interface, an address encoder coupled to the random-access memory, the address encoder to, when the random-access memory indicates a hit of the read request, generate a second address corresponding to a victim cache based on the first address, and a multiplexer coupled to the victim cache to transmit a response including data obtained from the second address of the victim cache.

Methods, apparatus, systems and articles of manufacture are disclosed facilitate read-modify-write support in a coherent victim cache with parallel data paths. An example apparatus includes a random-access memory configured to be coupled to a central processing unit via a first interface and a second interface, the random-access memory configured to obtain a read request indicating a first address to read via a snoop interface, an address encoder coupled to the random-access memory, the address encoder to, when the random-access memory indicates a hit of the read request, generate a second address corresponding to a victim cache based on the first address, and a multiplexer coupled to the victim cache to transmit a response including data obtained from the second address of the victim cache.

A caching system including a first sub-cache and a second sub-cache in parallel with the first sub-cache, wherein the second sub-cache includes: line type bits configured to store an indication that a corresponding cache line of the second sub-cache is configured to store write-miss data, and an eviction controller configured to evict a cache line of the second sub-cache storing write-miss data based on an indication that the cache line has been fully written.