The disclosure provides a system for electromagnetic monitoring of active cracks in a concrete dam. The system includes at least four electromagnetic signal acquisition devices and a main control module. Each electromagnetic signal acquisition device includes: an electromagnetic monitoring sensor, an electromagnetic signal acquisition module, a power supply module and a first wireless communication module, for collecting and extracting electromagnetic radiation signals generated by the active cracks in the concrete dam. The main control module includes: a second wireless communication module, a CPU, a data storage unit and a data display unit, for processing the electromagnetic radiation signals received by the second wireless communication module, positioning locations of the active cracks and quantifying sizes of the active cracks.

Examining an object, comprising: receiving potential defects, each associated with a location; performing first clustering of the potential defects to obtain first and second subsets, the clustering performed such that potential defects in the first subset are denser in a physical area than potential defects in the second subset; automatically assigning first validity probabilities to potential defects in the first and second subsets; selecting for review potential defects from the first and second subsets, according to a third policy, and in accordance with a strategy for combining top elements and randomly selected elements from the merged list; receiving indications for potential defects in part of the potential defect lists, subsequent to potential defects being reviewed; updating the policies in accordance with validation or classification of items in the first and second subsets; and repeating said assigning, selecting, receiving and updating with the updated policies, until a stopping criteria is observed.

A data processing method for detection of deterioration of semiconductor process kits includes the following steps: acquiring a plurality of Raman spectra data of a semiconductor process kit and performing a plurality calculating processes on the Raman spectra data to obtain a first deterioration state determining parameter indicating the aging degree of the entire semiconductor process kit and a second deterioration state determining parameter indicating the degree of variation of the internal molecular structure of the semiconductor process kit.

Examining an object, comprising: receiving potential defects, each associated with a location; performing first clustering of the potential defects to obtain first and second subsets, the clustering performed such that potential defects in the first subset are denser in a physical area than potential defects in the second subset; automatically assigning first validity probabilities to potential defects in the first and second subsets; selecting for review potential defects from the first and second subsets, according to a third policy, and in accordance with a strategy for combining top elements and randomly selected elements from the merged list; receiving indications for potential defects in part of the potential defect lists, subsequent to potential defects being reviewed; updating the policies in accordance with validation or classification of items in the first and second subsets; and repeating said assigning, selecting, receiving and updating with the updated policies, until a stopping criteria is observed.

An apparatus divides a photographed image of a sheet-like inspection object into blocks each of which has a size of a predetermined number of pixels by a predetermined number of pixels, calculates a longitudinal variance based on pixel values in a longitudinal direction in each block and a lateral variance based on pixel values in a lateral direction in the block, determines whether the block is a defect candidate using the longitudinal variance and the lateral variance as sheet-like inspection object defect determination evaluation values, and determines, based on one of a length and an area of the blocks determined as the defect candidates, whether the sheet-like inspection object has defect.

A processing method includes obtaining a processing image of a apparatus and performing a second processing on the processing image to generate a target image to analyze the target image according to a target defect detection method to realize defect detection of the apparatus. The processing image is obtained by performing a first processing on an initial image of the apparatus. The first processing includes performing scale processing on the initial image according to defect parameters corresponding to the initial image.

A method for evaluating a semiconductor wafer includes detecting semiconductor wafer LPDs as an examination sample in two measurement modes, performing size classification of the LPDs, calculating a distance between detection coordinates and a relative angle in the two measurement modes, presetting determination criteria to determine each LPD as a foreign matter or killer defect in accordance with each classified size, detecting semiconductor wafer LPDs as an evaluation target in the two measurement modes, performing size classification of the LPDs as the evaluation target, calculating a distance between detection coordinates and a relative angle of the evaluation target, and classifying the LPDs detected on a surface of the evaluation target into the killer defect and the foreign mater based on a result of the calculation and the determination criteria. The method enables classifying all LPDs from which quantitative size information cannot be provided, into the killer defect and foreign matter.

A surface inspection system, as well as related components and methods, are provided. The surface inspection system includes a beam source subsystem, a beam scanning subsystem, a workpiece movement subsystem, an optical collection and detection subsystem, and a processing subsystem. The optical collection and detection system features, in the front quartersphere, a light channel assembly for collecting light reflected from the surface of the workpiece, and a front collector and wing collectors for collecting light scattered from the surface, to greatly improve the measurement capabilities of the system. The light channel assembly has a switchable edge exclusion mask and a reflected light detection system for improved detection of the reflected light.

A system and method for cosmetic evaluation of an electronic device, using the device's own camera or cameras to take photos of the device itself using a mirror or mirrors and using the processor of the electronic device itself to analyze its own cosmetic condition.

According to the improved concept, a method for analyzing a semiconductor element comprising polymer residues located on a surface of the semiconductor element is provided. The method comprises marking at least a fraction of the residues by exposing the semiconductor element to a fluorescent substance and detecting the marked residues by visualizing the marked residues on the surface of the semiconductor element using fluorescence microscopy.