Stack fault inspection apparatus and method are disclosed. The apparatus includes a sample stage fixing the silicon carbide substrate and allow the incident light to scan the substrate surface; an incident light source configured to irradiate a vertical illumination light of a wavelength corresponding to an energy greater than a band gap energy of the substrate to at least a portion of a surface of the substrate in a direction substantially perpendicular to the surface of the substrate; a photomultiplier tube (PMT) configured to obtain a photoluminescence mapping image having a wavelength corresponding to the band gap energy of the substrate from the surface of the substrate; and a controller configured to process the mapping image and identify stacking faults.

A wafer includes a substrate layer, a first mirror layer having a plurality of two-dimensionally arranged first mirror portions, and a second mirror layer having a plurality of two-dimensionally arranged second mirror portions. In the wafer, a gap is formed between the first mirror portion and the second mirror portion so as to form a plurality of Fabry-Perot interference filter portions. A wafer inspection method according to an embodiment includes a step of performing faulty/non-faulty determination of each of the plurality of Fabry-Perot interference filter portions, and a step of applying ink to at least part of a portion overlapping the gap when viewed in a facing direction on the second mirror layer of the Fabry-Perot interference filter portion determined as faulty.

The invention provides a method of detecting crystallographic defects, comprising: sampling wafer of an ingot in complying with a predetermined wafer sampling frequency; identifying crystallographic defects of the wafer to show the crystallographic defects of the wafer; characterizing observation of the crystallographic defects of the wafer and extracting a value characterizing the crystallographic defects; through a result of characterizing the crystallographic defects, obtaining a radial distribution of density of the wafer and categorizing the crystallographic defects; and obtaining an isogram of the crystallographic defects of the wafer to show a crystallographic defect distribution of the whole ingot according to the value characterizing the crystallographic defects and categories of the crystallographic defects. It is no need to break the ingot to obtain the crystallographic defect distribution of the whole ingot, through which the technology for growing the ingot may be effectively adjusted to obtain the ingot with required characteristics of defect.

This inspection device includes: a laser irradiation unit, an imaging unit that takes an image of a wafer, a display that receives an input, and a control part, wherein the display receives an input of wafer processing information including information of the wafer and a laser processing target for the wafer, and the control part is configured to determine a recipe (a processing condition) including an irradiation condition of the laser beam by the laser irradiation unit based on the wafer processing information received through the display, to control the laser irradiation unit so that the wafer is irradiated with the laser beam according to the determined recipe, to acquire a laser processing result of the wafer due to the irradiation of the laser beam by controlling the imaging unit to take an image of the wafer, and to evaluate the recipe based on the laser processing result.

An advance in high-resolution optical metrology has been achieved by the introduction of incoherent holographic imaging. FINCH, an example of incoherent holography, is shown to simplify the process, eliminating many steps in metrology and at the same time increasing throughput, resolution and accuracy of the method. A proposed technique requires only a single image capture with a non-moving camera rather than the capture of multiple stacks of images requiring many camera exposures and movement of the camera or sample in the conventional techniques.

This defect inspection device for emitting illumination light onto a moving and rotating sample and inspecting for sample defects by scanning the sample in a spiral shape or concentric circle shapes comprises: an illumination and detection unit comprising an emission optical system and a detection optical system; a rotary stage for rotating the sample; a rectilinear stage for rectilinearly moving the rotary stage; and a controller for controlling the illumination and detection unit, rotary stage, and rectilinear stage. On the linear path of the rectilinear stage are a scanning start position where illumination light is emitted onto the sample and scanning is started and a sample delivery position where movement of the sample to the scanning start position starts. When the sample arrives at the scanning start position, the defect inspection device starts emitting the illumination light onto the sample without waiting for the rotation speed of the rotary stage to rise to a specified rotation speed for scanning and raises the rotation speed of the rotary stage to the specified rotation speed while scanning the sample.

A method for detecting an internal crack in a wafer includes a first image recording step of applying near infrared light having a transmission wavelength to a reference wafer having the same configuration as a target wafer to be subjected to the detection of the internal crack, thereby obtaining a first image of the reference wafer having no internal crack and then recording the first image, a processing step of processing the target wafer, a second image recording step of applying the near infrared light to the target wafer, thereby obtaining a second image of the processed target wafer and then recording the second image, and an internal crack detecting step of removing the same image information between the first image and the second image from the second image to obtain a residual image, thereby detecting the residual image as the internal crack in the target wafer.

An ingot evaluation method and a detecting apparatus are provided. Defect information of a wafer is obtained from an ingot. The defect information includes a position of at least one defect identified by optical detection. A center-of-gravity position of the defect is determined according to the defect information. Uniformity of the defect is evaluated according to the center-of-gravity position. The uniformity is related to quality of a processed wafer.

A wafer inspection apparatus includes a support structure including a frame and vacuum chucks mounted thereon, each vacuum chuck having a support surface including a vacuum suction portion, the support structure configured to structurally support a wafer on one or more vacuum chucks, the frame defining an opening larger than an area of the wafer. The wafer inspection apparatus includes an electromagnetic wave emitter configured to irradiate an inspection electromagnetic wave to the wafer, a sensor configured to receive the inspection electromagnetic wave from the wafer based on the inspection electromagnetic wave passing through the wafer, and a driver configured to move at least one of the electromagnetic wave emitter or the frame to change an irradiation location of the wafer. Each vacuum chuck is configured to be selectively movable between a first location and a second location in relation to the frame.

Manufacturing a device may include inspecting a surface of an inspection target device. The inspecting may include forming a metal layer on a surface of the inspection target device on which a minute pattern is formed, directing a beam of light to be incident and normal to the surface of the inspection target device, determining a spectrum of light reflected from the surface of the inspection target device, and generating, via the spectrum, information associated with a structural characteristic of the minute pattern formed on the inspection target device. The inspection target device may be selectively incorporated into the manufactured device based on the generated information.