Provided is a sample property detecting apparatus including: a wave source configured to irradiate a wave towards a sample; a detector configured to detect a laser speckle that is generated when the wave is multiple-scattered by the sample, at every time point that is set in advance; and a controller configured to obtain a temporal correlation that is a variation in the detected laser speckle according to time, and to detect properties of the sample in real-time based on the temporal correlation, wherein the detector detects the laser speckle between the sample and the detector or from a region in the detector.

A single-shot metrology for direct inspection of an entirety of the interior of an EUV vessel is provided. An EUV vessel including an inspection tool integrated with the EUV vessel is provided. During an inspection process, the inspection tool is moved into a primary focus region of the EUV vessel. While the inspection tool is disposed at the primary focus region and while providing a substantially uniform and constant light level to an interior of the EUV vessel by way of an illuminator, a panoramic image of an interior of the EUV vessel is captured by way of a single-shot of the inspection tool. Thereafter, a level of tin contamination on a plurality of components of the EUV vessel is quantified based on the panoramic image of the interior of the EUV vessel. The quantified level of contamination is compared to a KPI, and an OCAP may be implemented.

A metrology target includes a first set of pattern elements compatible with a first metrology mode along one or more directions, and a second set of pattern elements compatible with a second metrology mode along one or more directions, wherein the second set of pattern elements includes a first portion of the first set of pattern elements, and wherein the second set of pattern elements is surrounded by a second portion of the first set of pattern elements not included in the second set of pattern elements.

A system for passively monitoring a sample is disclosed. The system comprises an optical arrangement, a filtering unit and a detector unit. The optical arrangement is configured for collecting light arriving from a sample, directing the collected light to the filtering unit for filtering based on at least one of spatial and spectral composition and directing the collected light onto the detector unit. The optical arrangement and the detector unit are arranged to provide imaging of collected light from the sample on the detector unit with selected focusing/defocusing level to generate image data pieces comprising speckle patterns formed in the collected light.

Context attributes for optical imaging of a patterned layer of a semiconductor die are calculated. Calculating the context attributes includes calculating convolutions of a pattern of the patterned layer with respective kernels of a plurality of kernels, wherein the plurality of kernels is orthogonal. Defects on the semiconductor die are found in accordance with the context attributes.

The invention is to provide a defect detection device capable of using a compact optical system to detect a plurality of types of defects with high sensitivity and high speed. The defect detection device includes an irradiation system that irradiates light onto an object to be inspected; an optical system that forms scattered light produced by a light irradiation into an image; a microlens array disposed at an image plane of the optical system; an imaging element that is disposed at a position offset from the imaging plane of the optical system and that images light that passes through the microlens array; a mask image storage unit that stores a plurality of mask images generated for each type of defect or each defect direction; and a calculation unit that carries out mask processing on an image obtained from the imaging element using the plurality of mask images and carries out defect detection processing.

Provided is a sample property detecting apparatus including: a wave source configured to irradiate a wave towards a sample; a detector configured to detect a laser speckle that is generated when the wave is multiple-scattered by the sample, at every time point that is set in advance; and a controller configured to obtain a temporal correlation that is a variation in the detected laser speckle according to time, and to detect properties of the sample in real-time based on the temporal correlation, wherein the detector detects the laser speckle between the sample and the detector or from a region in the detector.

Disclosed are methods and apparatus for facilitating defect detection in a multilayer stack. The method includes selection of a set of structure parameters for modeling a particular multilayer stack and a particular defect contained within such particular multilayer stack and a set of operating parameters for an optical inspection system. Based on the set of structure and operating parameters, an electromagnetic simulation is performed of waves scattered from the particular multilayer stack and defect and arriving at a collection pupil of the optical inspection system. Based on the simulated waves at the collection pupil, a design of a phase filter having a plurality of positions for changing a plurality of phases within a plurality of corresponding positions of the collection pupil of the optical inspection tool is determined so as to compensate for an adverse effect of the particular multilayer stack on obtaining a defect signal for the defect within such particular multilayer stack and/or to enhance such defect signal. The design of the phase filter is then provided for fabrication or configuration of a phase filter inserted within the optical inspection system for detection of defects in multilayer stacks with the same structure parameters as the particular multilayer stack. Methods and systems for inspecting a multilayer stack for defects are also disclosed.

Provided are a method and an apparatus for inspecting an extreme ultraviolet (EUV) mask at a high speed with high optical efficiency, and a method of manufacturing the EUV mask, wherein the method of inspecting the EUV mask is included in the method of manufacturing the EUV mask. The apparatus for inspecting the EUV mask includes a light source configured to generate and output light, a linear zone plate configured to convert the light from the light source to light having a linear form, a slit plate configured to output the light having the linear form by removing a higher-order diffracted light component from the light having the linear form, a stage on which the EUV mask is located, and a detector configured to detect the light reflected from the EUV mask, in response to the light being irradiated onto and reflected from the EUV mask.

One aspect is an apparatus for analyzing particles a capillary as a measuring cell with a hollow channel for receiving or passing through a test sample containing the particles includes a light source for generating a light beam, an optical device for coupling the light beam into the hollow channel at an input point for the purpose of illuminating the test sample, and a detector for detecting scattered light exiting the hollow channel. In one aspects, the hollow channel has an internal diameter D.sub.H in the range of 10 m to 60 m, that the light beam has a radial light intensity distribution with a minimum beam diameter D.sub.L, wherein the following applies to the diameter ratio D.sub.L/D.sub.H: 0.05<D.sub.L/D.sub.H<2.00, and that the light beam has an angle of incidence of less than 2 degrees in relation to the hollow channel's longitudinal axis on entering the hollow channel.