A sensor element for detecting a specific gas concentration in a measurement-object gas includes: an element body provided with a measurement-object gas flow section therein, the measurement-object gas flow section introducing the measurement-object gas and causing the measurement-object gas to flow therethrough; a reference electrode disposed inside the element body; and a reference-gas introduction section that causes a reference gas to flow to the reference electrode, wherein the reference-gas introduction section has a reference-gas flow path, and one or more preliminary chambers which are disposed in a middle of the reference-gas flow path, and have a diffusion resistance lower than a diffusion resistance of the reference-gas flow path, and at least part of the reference-gas flow path is composed of a porous body so that any of the one or more preliminary chambers does not directly communicate with an outside of the element body.

A chemical release detection system includes a camera, an output control member, a mitigation member, and a controller in operative communication with the camera, the output control member, and the mitigation member. The camera is configured to detect a chemical release. The output control member is configured to generate commands. The mitigation member is configured to reduce risk generated by the chemical release based on the commands by the output control member. The controller is configured to notify a user of the chemical release, and provide an origin of the release and a direction of the release. The controller controls the operation of the output control member and the mitigation member.

A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

A bismuth oxide material with a hierarchical structure in gas detection used for detecting the content of low-concentration ammonia in an environment. The bismuth oxide material with the hierarchical structure integrally presents a microsphere shape. The diameter of the microsphere is 1-3 μm. The bismuth oxide material is formed by self-assembling lamellar structure units with the thickness of 10-80 nm. The bismuth oxide material is made into a gas sensor with high sensitivity and selectivity to ammonia gas at room temperature, which is suitable for detecting trace harmful gas in the environment. The gas sensor made of bismuth oxide does not need to be heated when in use, so that the heating step of the conventional gas sensor is omitted, and the gas sensor can be directly placed in a normal-temperature environment for operation. The method is simple, easy to operate, high in efficiency and wide in application prospect.

Aspects of the present disclosure generally relate to functionalized metals, to processes for producing functionalized metals, and to uses of functionalized metals as, e.g., sensing materials for chemiresistive sensors. In an aspect, a process for producing a functionalized metal is provided. The process includes introducing, under first conditions, a first precursor comprising a Group 10 to Group 14 metal with an amine to form a second precursor comprising the Group 10 to Group 14 metal. The process further includes introducing, under second conditions, the second precursor with a third precursor to form the functionalized metal, the third precursor comprising an organic material having the formula HS—R—COOH, wherein R is an unsubstituted hydrocarbyl, a substituted hydrocarbyl, an unsubstituted alkoxy, or a substituted alkoxy.

In a gas sensor, which measures a measurement pump current Ip3 of a measurement chamber, while switching a preliminary pump cell of a preliminary chamber ON or OFF at a constant period, there are formed in communication with each other sequentially from a gas introduction port in the interior of a structural body made from a solid electrolyte, a preliminary chamber, an oxygen concentration adjustment chamber, and a measurement chamber. The gas sensor rapidly determines a steady-state value of a measurement pump current Ip3, based on a peak value of a rate of change over time dIp3/dt of the measurement pump current Ip3, thereby hastening an ON/OFF switching period of the preliminary pump cell.

The present invention relates to a drying apparatus for drying a substance, in particular for drying poultry manure, comprising a drying unit with a conveyor, a dry substance sensor and an ammonia sensor.

A method for detecting and quantifying an amount of ammonia in a sample by surface-enhanced Raman spectroscopy includes a step of position a liquid or gaseous sample proximate to a detection substrate. Incident light is focused onto the detection substrate while it is positioned proximate to the sample, the incident light having an excitation wavelength from about 500 nm to 800 nm. Raman activity from ammonia proximate to the detection substrate is then detected.

An exhaust stream monitoring system for a photolithography track of an IC fabrication process comprises a reaction chamber including a housing, an inflow port and an outflow port, the housing containing a thermal plate for heating a semiconductor process wafer for a predetermined amount of time. An influent pipe coupled to the inflow port supplies a photoresist adhesion promoter in a gaseous form to the reaction chamber. An effluent pipe coupled to the outflow port is operative to remove byproducts from the reaction chamber as an exhaust stream. At least one gas sensor manifold assembly is coupled to the effluent pipe for monitoring the exhaust stream from the reaction chamber to detect presence of one or more byproducts of a reaction between the photoresist adhesion promoter and the semiconductor process wafer.

The sensitivity of a graphene gas sensor to a gas analyte molecule may be significantly enhanced using molecular doping, which may be as effective as substitutional doping and more effective than electric-field doping. In particular, the room temperature sensitivity of NO.sub.2-doped graphene to NH.sub.3 was measured to be comparable to the sensitivity of graphene doped with substitutional boron atoms and superior to that of undoped graphene by an order of magnitude. The detection limit for NO.sub.2-doped graphene gas sensors was estimated to be about 200 ppb, which may be improved with extended exposure to NO.sub.2, compared to a detection limit of about 1.4 ppm for undoped graphene. While the stability analysis of NO.sub.2-doped graphene sensors indicates that the doping method may not be completely stable, molecular doping is nevertheless a candidate technique for sensitivity improvement by enhancing the initial carrier concentration.