An optical waveguide termination comprising a light-receiving inlet for receiving light to be terminated, a curved section extending from the inlet and having a continuously decreasing radius of curvature, and a light-terminating tip at an end of the curved section. The curved section may define a spiral waveguide, for example a logarithmic spiral, having a waveguide width that continuously decreases from the inlet to the tip.

A rectangular optical waveguide, an optical phase shifter and an optical modulator each formed of a semiconductor layer are formed on an insulating film constituting an SOI wafer, and then a rear insulating film formed on a rear surface of the SOI wafer is removed. Moreover, a plurality of trenches each having a first depth from an upper surface of the insulating film are formed at a position not overlapping with the rectangular optical waveguide, the optical phase shifter and the optical modulator when seen in a plan view in the insulating film. As a result, since an electric charge can be easily released from the SOI wafer even when the SOI wafer is later mounted on the electrostatic chuck included in the semiconductor manufacturing apparatus, the electric charge is less likely to be accumulated on the rear surface of the SOI wafer.

A beam-steering optical transceiver is provided. The transceiver includes one or more modules, each comprising an antenna chip and a control chip bonded to the antenna chip. Each antenna chip has a feeder waveguide, a plurality of row waveguides that tap off from the feeder waveguide, and a plurality of metallic nanoantenna elements arranged in a two-dimensional array of rows and columns such that each row overlies one of the row waveguides. Each antenna chip also includes a plurality of independently addressable thermo-optical phase shifters, each configured to produce a thermo-optical phase shift in a respective row. Each antenna chip also has, for each row, a row-wise heating circuit configured to produce a respective thermo-optic phase shift at each nanoantenna element along its row. The control chip includes controllable current sources for the independently addressable thermo-optical phase shifters and the row-wise heating circuits.

A method for adjusting the properties of a photonic circuit such that they fit with expected properties, the photonic circuit including a waveguide which includes a light propagation region, is provided. The method includes a step of modifying the refractive index of at least one zone of the region, the step being implemented by an ion implantation in the at least one zone. It extends to a waveguide the light propagation region of which has at least one zone with a refractive index modified by ion implantation in which the light remains confined, as well as a photonic circuit incorporating such a guide.

The disclosure provides a method of forming an erasable optical coupler in a photonic device comprising a conventional optical waveguide formed in a crystalline wafer. The method comprises selectively implanting ions in a localized region of the wafer material adjacent to the conventional waveguide of the photonic device, to cause modification of the crystal lattice structure of, and a change in refractive index in, the ion implanted region of the wafer material to thereby form an ion implanted waveguide optically coupled to the adjacent conventional waveguide to couple light out therefrom, or in thereto. The crystalline wafer material and ion implanted waveguide are such that the crystal lattice structure or composition can be modified to adjust or remove the optical coupling with the conventional waveguide by further modification of the refractive index in the ion implanted region.

Embodiments include apparatuses, methods, and systems including a semiconductor photonic device having a waveguide disposed above a substrate. The waveguide has a first section including amorphous silicon with a first refractive index, and a second section including crystalline silicon with a second refractive index different from the first refractive index. The semiconductor photonic device further includes a heat element at a vicinity of the first section of the waveguide. The heat element is arranged to generate heat to transform the amorphous silicon of the first section of the waveguide to partially or completely crystallized crystalline silicon with a third refractive index. The amorphous silicon in the first section may be formed with silicon lattice defects caused by an element implanted into the first section. Other embodiments may also be described and claimed.

Methods for post-fabrication trimming of a silicon ring resonator are disclosed. Methods include fabricating a heating element, positioned within 2 microns of the silicon ring resonator, subjecting the silicon ring resonator to energetic ion implantation, and annealing the silicon ring resonator, using the heating element. The energetic ion implantation shifts a resonance of the silicon ring resonator towards the red side of the electro-magnetic spectrum. The annealing shifts the resonance of the silicon ring resonator towards the blue side of the electro-magnetic spectrum.

There is set forth herein an optoelectrical system comprising: a conductive path for supplying an input voltage to a photonics device, wherein the conductive path comprises a base structure through via extending through a substrate and a photonics structure through via, the photonics structure through via extending through a photonics device dielectric stack. There is set forth herein an optoelectrical system comprising: a second structure fusion bonded to an interposer base dielectric stack of a first structure. There is set forth herein a method comprising: fabricating a second wafer built structure using a second wafer, the second wafer built structure defining a photonics structure and having a photonics device integrated into a photonics device dielectric stack of the second wafer based structure; and wafer scale bonding the second wafer built structure to a first wafer built structure.

A method for fabricating an integrated structure, using a fabrication system having a CMOS line and a photonics line, includes the steps of: in the photonics line, fabricating a first photonics component in a silicon wafer; transferring the wafer from the photonics line to the CMOS line; and in the CMOS line, fabricating a CMOS component in the silicon wafer. Additionally, a monolithic integrated structure includes a silicon wafer with a waveguide and a CMOS component formed therein, wherein the waveguide structure includes a ridge extending away from the upper surface of the silicon wafer. A monolithic integrated structure is also provided which has a photonics component and a CMOS component formed therein, the photonics component including a waveguide having a width of 0.5 μm to 13 μm.

A modulator. In some embodiments, the modulator includes a portion of an optical waveguide, the waveguide including a rib extending upwards from a surrounding slab. The rib may have a first sidewall, and a second sidewall parallel to the first sidewall. The rib may include a first region of a first conductivity type, and a second region of a second conductivity type different from the first conductivity type. The second region may have a first portion parallel to and extending to the first sidewall, and a second portion parallel to the second sidewall. The first region may extend between the first portion of the second region and the second portion of the second region.