A non-chemically-amplified positive resist composition comprising a polymer comprising both recurring units derived from a sulfonium salt capable of generating a fluorinated acid and recurring units containing an amino group as a base resin exhibits a high resolution and a low edge roughness and forms a pattern of good profile after exposure and organic solvent development.

Stabilized precursor solutions can be used to form radiation inorganic coating materials. The precursor solutions generally comprise metal suboxide cations, peroxide-based ligands and polyatomic anions. Design of the precursor solutions can be performed to achieve a high level of stability of the precursor solutions. The resulting coating materials can be designed for patterning with a selected radiation, such as ultraviolet light, x-ray radiation or electron beam radiation. The radiation patterned coating material can have a high contrast with respect to material properties, such that development of a latent image can be successful to form lines with very low line-width roughness and adjacent structures with a very small pitch.

A resist composition is provided comprising a polymer comprising recurring units (a) having a succinimide structure and recurring units (b) containing a group capable of polarity switch with the aid of acid. The resist composition suppresses acid diffusion, exhibits a high resolution, and forms a pattern of satisfactory profile with low edge roughness.

A substrate treating method includes a determining step for determining a treating condition for hydrophobizing a surface of a substrate, based on a target regarding a dissolved area size in a resist pattern, and a treating step for hydrophobizing the surface of the substrate with the treating condition determined in the determining step before forming resist film on the surface of the substrate.

The material for forming an underlayer film for lithography of the present invention contains a compound having a structure represented by the following general formula (1). ##STR00001##
(in formula (1), each X independently represents an oxygen atom or a sulfur atom, R.sup.1 represents a single bond or a 2n-valent hydrocarbon group having 1 to 30 carbon atoms, the hydrocarbon group may have a cyclic hydrocarbon group, a double bond, a hetero atom or an aromatic group having 6 to 30 carbon atoms, R.sup.2 represents a linear, branched or cyclic alkyl group having 1 to 10 carbon atoms, an aryl group having 6 to 10 carbon atoms, an alkenyl group having 2 to 10 carbon atoms, or a hydroxyl group, m is an integer of 0 to 3, n is an integer of 1 to 4, p is 0 or 1, and q is an integer of 1 to 100.).

A transfer film for forming a decorative layer on at least one surface of a film sensor has a coloring composition layer containing a black or white pigment, and the coloring composition layer satisfies inequality 1:

50>a×b>10   inequality 1

where a is the mass content ratio of the black or white pigment in the coloring composition layer, and b is the thickness of the coloring composition layer having a unit of μm.

An object of the present invention is to provide a resist pattern forming method that has excellent pattern forming properties and generates few residues and a semiconductor chip manufacturing method. The resist pattern forming method according to an embodiment of the present invention has a step A of forming a film on a substrate by using an actinic ray-sensitive or radiation-sensitive resin composition containing a photoacid generator and a resin whose polarity is increased by the action of an acid, a step B of exposing the film, step C of developing the exposed film by using an alkali developer, a step D of washing the developed film by using water, and a step E of washing the film washed in the step D by using a chemical liquid containing an alcohol-based solvent, in which the alkali developer contains a quaternary ammonium salt.

A resist composition containing a resin component (A1) having a constitutional unit (a01) and a constitutional unit (a02) derived from compounds each represented by General Formulae (a01-1) and (a02-1), a compound (B1) represented by General Formula (b1), and a compound represented by General Formula (d1-1) or a compound represented by General Formula (d1-2), in the formulae, C.sup.t represents a tertiary carbon atom, a carbon atom at an α-position of C.sup.t constitutes a carbon-carbon unsaturated bond, wa.sup.02 represents an aromatic hydrocarbon group, and Rb.sup.1 represents hydrocarbon group, where a fluorine atom is not contained

##STR00001##

Imaging layers on the surface of a substrate may be patterned using next generation lithographic techniques, and the resulting patterned film may be used as a lithographic mask, for example, for production of a semiconductor device.

A chemically amplified negative resist composition comprising an alcohol compound of specific structure as a crosslinker has a high sensitivity and dissolution contrast and forms a pattern of good profile with reduced values of LER and CDU.