A reference signal generator having high order temperature compensation includes: first and second transistors generating a proportional to absolute temperature (PTAT) signal and at least one complementary to absolute temperature (CTAT) signal according to at least one bandgap related to the first and second transistors; a feedback network coupled to the first and second transistors; an amplifier circuit configured to linearly superimpose the PTAT signal and the CTAT signals via the feedback network, to generate a reference signal; a second order adjustment circuit including a third transistor controlled by a bias voltage, to generate an adjustment current for adjusting the reference signal; and a third order adjustment circuit configured to adjust the bias voltage according to a temperature under test, for adjusting the adjustment current, to adjust the reference signal, such that a variation of the reference signal is smaller than a predetermined variation range within a temperature range.

A reference signal generator having high order temperature compensation includes: first and second transistors generating a proportional to absolute temperature (PTAT) signal and at least one complementary to absolute temperature (CTAT) signal according to at least one bandgap related to the first and second transistors; a feedback network coupled to the first and second transistors; an amplifier circuit configured to linearly superimpose the PTAT signal and the CTAT signals via the feedback network, to generate a reference signal; a second order adjustment circuit including a third transistor controlled by a bias voltage, to generate an adjustment current for adjusting the reference signal; and a third order adjustment circuit configured to adjust the bias voltage according to a temperature under test, for adjusting the adjustment current, to adjust the reference signal, such that a variation of the reference signal is smaller than a predetermined variation range within a temperature range.

Embodiments of the present disclosure may relate to a voltage reference generator comprising: a local heater structured to generate continuous controlled temperature and uniform thermal profile, at multiple points further comprising a Bipolar Junction, Transistors, and a heating element. Embodiments may additionally include temperature compensated resistances adopted to generate constant temperature compensated voltage reference current using an operational amplifier, a transistor, and two or more resistors, positive and negative. The embodiments may further include, current mirrors comprising a plurality of MOS transistors configured to mirror current flowing in the PMOS transistor. Further embodiments may include, digital modulators structured to generate modulated control signals, the control signals being structured to control a temperature by trimming change in the voltage reference, and a Digital to Analog Converter configured to generate output current proportional to a current reference mirrored in one or more of the plurality of transistors.

Embodiments of the present disclosure may relate to a voltage reference generator comprising: a local heater structured to generate continuous controlled temperature and uniform thermal profile, at multiple points further comprising a Bipolar Junction, Transistors, and a heating element. Embodiments may additionally include temperature compensated resistances adopted to generate constant temperature compensated voltage reference current using an operational amplifier, a transistor, and two or more resistors, positive and negative. The embodiments may further include, current mirrors comprising a plurality of MOS transistors configured to mirror current flowing in the PMOS transistor. Further embodiments may include, digital modulators structured to generate modulated control signals, the control signals being structured to control a temperature by trimming change in the voltage reference, and a Digital to Analog Converter configured to generate output current proportional to a current reference mirrored in one or more of the plurality of transistors.

An integrated circuit includes a temperature-independent voltage generating circuit configured to generate a bandgap voltage by summing a voltage proportional to absolute temperature and a voltage complementary to absolute temperature, a temperature threshold detection circuit including a resistive voltage divider bridge configured to generate a reference voltage equal to a fraction of the bandgap voltage and a comparator circuit configured to compare the voltage proportional to absolute temperature with the reference voltage.

An integrated circuit includes a temperature-independent voltage generating circuit configured to generate a bandgap voltage by summing a voltage proportional to absolute temperature and a voltage complementary to absolute temperature, a temperature threshold detection circuit including a resistive voltage divider bridge configured to generate a reference voltage equal to a fraction of the bandgap voltage and a comparator circuit configured to compare the voltage proportional to absolute temperature with the reference voltage.

A reference voltage generator circuit includes a band gap reference voltage circuit that generates a predetermined reference voltage, and a first correction current generator circuit that generates a first correction current in response to change in temperature. The first correction current generator circuit generates a plurality of voltage peaks in response to the change in temperature in the output voltage of the reference voltage generator circuit by injecting the first correction current into the band gap reference voltage circuit, and output voltage characteristics configuring each of the plurality of voltage peaks are made such that the output voltage varies continuously with respect to the change in temperature. The first correction current generator circuit includes a temperature setting circuit that can change the plurality of temperatures corresponding to each of the plurality of voltage peaks.

A reference voltage generator circuit includes a band gap reference voltage circuit that generates a predetermined reference voltage, and a first correction current generator circuit that generates a first correction current in response to change in temperature. The first correction current generator circuit generates a plurality of voltage peaks in response to the change in temperature in the output voltage of the reference voltage generator circuit by injecting the first correction current into the band gap reference voltage circuit, and output voltage characteristics configuring each of the plurality of voltage peaks are made such that the output voltage varies continuously with respect to the change in temperature. The first correction current generator circuit includes a temperature setting circuit that can change the plurality of temperatures corresponding to each of the plurality of voltage peaks.

A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer. The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.

A bandgap reference circuit includes a plurality of current sources including different temperature coefficients, a first trimmer, and a mixer. The first trimmer adjusts current amounts for a plurality of currents, which are individually output from each of the plurality of current sources, to be equal to each other. The mixer adjusts an aggregate ratio and combines the plurality of currents based on the aggregate ratio.