A memory device that performs internal ECC (error checking and correction) can treat an N-bit channel as two N/2-bit channels for application of ECC. The memory device includes a memory array to store data and prefetches data bits and error checking and correction (ECC) bits from the memory array for a memory access operation. The memory device includes internal ECC hardware to apply ECC, with a first group of a first half the data bits checked by a first half of the ECC bits in parallel with a second group of a second half of the data bits checked by a second half of the ECC bits.

A memory system includes a processing device (e.g., a controller implemented using a CPU, FPGA, and/or logic circuitry) and memory regions (e.g., in a flash memory or other non-volatile memory) storing data. The processing device receives an access request from a host system that is requesting to read the stored data. In one approach, the memory system is configured to: receive, from the host system over a bus, a read command to access data associated with an address in a non-volatile memory; in response to receiving the read command, access, by the processing device, multiple copies of data stored in at least one memory region of the non-volatile memory; match, by the processing device, data from the copies with each other; select, based on matching data from the copies with each other, first data from a first copy of the copies; and provide, to the host system over the bus, the first data as output data.

Staging data on a storage element integrating fast durable storage and bulk durable storage, including: receiving, at a storage element integrating fast durable storage and bulk durable storage, a data storage operation from a host computer; storing data corresponding to the data storage operation within fast durable storage in accordance with a first data resiliency technique; and responsive to detecting a condition for transferring data between fast durable storage and bulk durable storage, transferring the data from fast durable storage to bulk durable storage in accordance with a second data resiliency technique.

Techniques for estimating raw bit error rate of data stored in a group of memory cells are described. Encoded data is read from a group of memory cells. A first population value is obtained based on a first number of memory cells in the group of memory cells having a read voltage within a first range of read voltages, each read voltage representing one or more bits of the encoded data. An estimated raw bit error rate of the data is determined to satisfy a first threshold. The determination is made using a first trained machine learning model and based in part on the first population value. A first media management operation is initiated in response to the determination that the estimated raw bit error rate satisfies the first threshold.

A data processor includes provides memory commands to a memory channel according to predetermined criteria. The data processor includes a first error code generation circuit, a second error code generation circuit, and a queue. The first error code generation circuit generates a first type of error code in response to data of a write request. The second error code generation circuit generates a second type of error code for the write request, the second type of error code different from the first type of error code. The queue is coupled to the first error code generation circuit and to the second error code generation circuit, for provides write commands to an interface, the write commands including the data, the first type of error code, and the second type of error code.

A storage system has zones in solid-state storage memory, with power loss protection. The system identifies portions of data for processes that utilize power loss protection. The system determines to activate or deactivate power loss protection for the portions of data for the processes. The system tracks activation and deactivation of power loss protection in zones in the solid-state storage memory, in accordance with the portions of data having power loss protection activated or deactivated.

The present disclosure relates to a method for accessing an array of memory cells, including storing a set of user data in a plurality of memory cells, storing, in a portion of the array, additional information representative of a voltage difference between a first threshold voltage and a second threshold voltage of the memory cells programmed to a first logic state, applying to the array a read voltage to activate a first group of memory cells corresponding to a preset number of memory cells, determining that the first group of memory cells has been activated based on applying the read voltage, wherein the read voltage is equal to the first threshold voltage when the first group of memory cells has been activated, and based on the additional data information, applying the voltage difference to the array to activate a second group of memory cells programmed to the first logic state.

A method includes receiving, by a memory sub-system, host data to be written to a plurality of blocks of a memory device associated with a memory sub-system, where each of the plurality of blocks are coupled to one of a plurality of word lines of the memory device. The method can further include generating parity data for each word line of the block; dividing the parity data into one of either a first word line parity set or a second word line parity set; generating a reduced parity data set with exclusive or parity values for the first word line parity set and for the second word line parity set; and writing the reduced parity data set in the memory sub-system.

A memory system which stores a journal including mapping change information, either in a first memory area or a second memory area, depending on available space of a memory device included in the memory system, being greater than a threshold.

A memory system includes a memory device and a processing device, operatively coupled to the memory device. The processing device performs operations comprising: identifying an operating temperature of the memory device; determining that the operating temperature satisfies a temperature condition; modifying a scan frequency parameter for performing a scan operation on representative blocks of a set of blocks in the memory device; and performing the scan operation at a frequency identified by the scan frequency parameter.