A method of operating a memory device is provided. The method includes: receiving a first command from a controller; activating a page of a memory cell array based on the first command; reading data of the activated page; detecting an error from the read data; correcting the detected error to generate error correction data; writing back the error correction data to the activated page in based on the detected error being a single-bit error; and blocking write-back of the error correction data to the activated page based on the detected error being a multi-bit error.

A memory controller includes: a map data storage for storing map data; and a read operation controller for receiving, from a host, a read request and a target logical address corresponding to the read request, acquiring a first physical address mapped to the target logical address, based on the map data, and obtaining data stored at the first physical address. When an uncorrectable error is present in the data stored at the first physical address, the read operation controller acquires a second physical address previously mapped to the target logical address before the first physical address, obtains data stored at the second physical address, and provides the host with the data stored at the second physical address and information representing occurrence of the uncorrectable error.

A memory system configured to dynamically adjust the amount of redundant information stored in memory cells of a wordline on an integrated circuit die based on a bit error rate. For example, in response to a determination that a bit error rate of the wordline is above a threshold, the memory system can store first data items as independent first codewords of an error correction code technique into a first portion of the memory cells of the wordline, generate second data items as redundant information from the first codewords, and store the second data items in a second portion of the memory cells of the wordline. If the bit error rate is below the threshold, third data items can be stored as independent second codewords of the same length as the first codewords in the memory cells of the wordline.

Systems, apparatuses, and methods related to a flip-on-precharge disable operation are described herein. In an example, a flip-on-precharge disable operation can include activating a set of memory cells in a memory device to perform a memory access. The memory device can include a plurality of sets of memory cells corresponding to respective portions of an array of memory cells of the memory device. The flip-on-precharge disable operation can further include receiving signaling indicative of a command for a precharge operation on a set of the plurality of sets of memory cells. The signaling can include one or more bits that indicates whether to disable a randomly performed flip operation on the set of memory cells. The flip-on-precharge disable operation can include, in response to the one or more bits indicating to disable the flip operation, performing the precharge operation without randomly performing the flip operation on the set of memory cells.

A test method and a test system are provided. The method includes that: first initial data is written into the storage module; ECC module encodes and generates first check data corresponding to first initial data based on first initial data, and writes first check data into the storage module; second initial data is written into a same address of the storage module; second initial data and first check data in the storage module are read. ECC module encodes and generates second check data corresponding to second initial data based on second initial data, and checks and corrects second initial data based on the first check data and the second check data; first read data of the memory is read, and whether a function of ECC module is abnormal is determined based on the first read data, the first read data is checked and corrected second initial data.

According to one embodiment, a semiconductor storage device includes a first memory cell capable of storing n-bit data (n is a natural number not less than 4). When receiving first data, including first and second bits of the n-bit data, from a controller, the semiconductor storage device writes the received first data to the first memory cell. After receiving the first data, when the semiconductor storage device receives second data including third and fourth bits of the n-bit data, the semiconductor storage device reads the first and second bits from the first memory cell and writes the n-bit data to the first memory cell based on the read first and second bits and the received second data.

A memory module may include a first memory module comprising a plurality of first memory devices each having an extra memory region, a second memory module comprising a plurality of second memory devices each having an extra memory region, and a control logic suitable for writing/reading data to/from the first memory devices, wherein the control logic writes/reads target data to be transferred to/from a third memory device having an error among the first memory devices, to/from the extra memory regions of the second memory devices.

Systems and corresponding methods employ an object-oriented (OO) memory (OOM) to effect inter-hardware-client (IHC) communication among a plurality of hardware clients included in same. A system comprises a centralized OOM and the plurality of hardware clients communicate, directly, to the centralized OOM device via OO message transactions. The centralized OOM device effects IHC communication among the plurality of hardware clients based on the OO message transactions. Another system comprises a plurality of OO memories (OOMs) capable of inter-object-oriented-memory-device communication. A hardware client communicates, directly, to a respective OOM device via OO message transactions. The inter-object-oriented-memory-device communication effects IHC communication among the plurality of hardware clients based on the OO message transactions.

A method and associated apparatus is disclosed for processing data by means of an error code, wherein the error code has an H-matrix with n columns and m rows, wherein the columns of the H-matrix are different, wherein component-by-component XOR sums of adjacent columns of the H-matrix are different from one another and from all columns of the H-matrix and wherein component-by-component XOR sums of nonadjacent columns of the H-matrix are different from all columns of the H-matrix and from all component-by-component XOR sums of adjacent columns of the H-matrix.

The present disclosure is directed to a method for storing information in a coded manner in non-volatile memory cells. The method includes providing a group of non-volatile memory cells of non volatile memory. The memory cell is of the type in which a stored logic state, which can be logic high or logic low, can be changed through application of a current to the cell and the state in the memory cell is read by reading a current provided by the cell. The group of non-volatile memory cells include a determined number of non-volatile memory cells which is greater than two. The group of non-volatile memory cells store a codeword formed by the values of said stored states of the cells of the group taken according to a given order. Given a set of codewords obtainable by the stored values in the determined number of non-volatile memory cells in a group, the method includes storing the information in at least two subsets of said set of codewords comprising each at least a codeword. Each codeword in a same subset has a same Hamming weight. Each codeword belonging to one subset has a Hamming distance equal or greater than two with respect to each codeword belonging to another subset.