Provided is an opto-electric transmission composite module and an opto-electric hybrid board, both of which can suppress the reduction in the function of an optical element when a driver element generates heat. The opto-electric transmission composite module includes: an opto-electric hybrid board including an optical waveguide, and an electric circuit board including a first terminal for mounting an optical element; and a printed wiring board including a fourth terminal for mounting a driver element. The printed wiring board is electrically connected with the electric circuit board.

A photonic integrated circuit (PIC) structure includes an active region in at least an active layer over a substrate, the active region including a plurality of transistors therein. A plurality of dielectric interconnect layers are over the active region, and an opening is defined through the plurality of dielectric interconnect layers. The opening extends to at least the active layer. A barrier is within the plurality of dielectric interconnect layers and surrounding the opening. An optical element is positioned in the opening. The barrier prevents stress damage, such as cracks and/or delaminations, from propagating from or to the opening, and maintains the hermetic seal of the PIC structure.

Microelectronic assemblies including photonic integrated circuits (PICs), related devices and methods, are disclosed herein. For example, in some embodiments, a photonic assembly may include a PIC in a first layer including an insulating material, wherein the PIC is embedded in the insulating material with an active surface facing up; a conductive pillar in the first layer; an integrated circuit (IC) in a second layer on the first layer, wherein the second layer includes the insulating material and the IC is embedded in the insulating material, and wherein the IC is electrically coupled to the active surface of the PIC and the conductive pillar; an optical component optically coupled to the active surface of the PIC; and a hollow channel surrounding the optical component, the hollow channel extending from the active surface of the PIC through the insulating material in the second layer.

A photonic package and a method of manufacturing a photonic package are provided. The photonic package includes a carrier, an electronic component, and a photonic component. The carrier has a first surface and a recess portion exposed from the first surface. The electronic component is disposed in recessed portion. The photonic component is disposed on and electrically connected to the electronic component and is configured to communicate optical signals.

A coupling alignment device and method for a laser chip and a silicon-based optoelectronic chip are disclosed. The device comprises a transfer mold which includes a substrate, first protrusions, and second protrusions. The first protrusions are provided with through holes and are used for being clamped into first recesses in the laser chip; and the second protrusions are used for being clamped into second recesses in the silicon-based optoelectronic chip. The coupling alignment is achieved by etching the first recesses in the laser chip, etching the second recesses in the silicon-based optoelectronic chip, etching the first protrusions, the second protrusions, and the through holes in the transfer mold. A flip-chip suction nozzle is connected with the transfer mold, which is in alignment with the laser chip, and picks up the laser chip by means of the through holes. Then, the laser chip is assembled on the silicon-based optoelectronic chip by aligning and contacting the transfer mold with the silicon-based optoelectronic chip. The method is of high precision, high efficiency, low costs, and can achieve large-scale and mass production.

Disclosed are a co-packaged integrated optoelectronic module and a co-packaged optoelectronic switch chip. The co-packaged integrated optoelectronic module includes a carrier board, and an optoelectronic submodule, a slave microprocessor and a master microprocessor disposed on and electrically connected to the carrier board. In the optoelectronic submodule, a digital signal processing chip converts an electrical analog signal into an electrical digital signal, an optoelectronic signal analog conversion chip converts an optical analog signal into the electrical analog signal to the digital signal processing chip, and an optical transceiver chip receives and transmits the optical analog signal to the optoelectronic signal analog conversion chip. The slave microprocessor monitors operation of the optoelectronic submodule. The master microprocessor processes a low-speed digital signal transmitted from the co-packaged integrated optoelectronic module to the outside, monitors operation of the co-packaged integrated optoelectronic module, and performs initialization of the co-packaged integrated optoelectronic module.

An opto-electric hybrid board includes an optical waveguide, and an electric circuit board disposed on a one-side surface in the thickness direction of the optical waveguide. The electric circuit board includes a first terminal on which an optical element portion is mounted and a second terminal on which a driver element portion is mounted. The electric circuit board includes a metal supporting layer that overlaps the first terminal and the second terminal when the electric circuit board is projected in the thickness direction. The metal supporting layer has an opening portion that is located between the first terminal and the second terminal when the metal supporting layer is projected in the thickness direction.

Semiconductor devices and methods of forming the semiconductor devices are described herein. A method includes providing a first material layer between a second material layer and a semiconductor substrate and forming a first waveguide in the second material layer. The method also includes forming a photonic die over the first waveguide and forming a first cavity in the semiconductor substrate and exposing the first layer. Once formed, the first cavity is filled with a first backfill material adjacent the first layer. The methods also include electrically coupling an electronic die to the photonic die. Some methods include packaging the semiconductor device in a packaged assembly.

A bonded structure comprises a substrate component having a plurality of first pads arranged on or within a surface of the substrate component, and an integrated circuit component having a plurality of second pads arranged on or within a surface of the integrated circuit component. The bonded structure further comprises a plurality of connection elements physically connecting the first pads to the second pads. The surface of the integrated circuit component is tilted obliquely to the surface of the substrate component at a tilt angle that results from nominal variations of surface sizes of the first and second pads.

A photonic integrated circuit (PIC) assembly that includes a PIC, and a light source mounted on a first carrier substrate, and optically coupled and aligned with the PIC. The first carrier substrate includes a wrap-around metal, that enables the first carrier substrate to be bonded electrically with the PIC using solder bumps, and wherein the wrap-around metal enables the first carrier substrate to be electrically controlled by an external device for facilitating alignment and optical coupling process with the PIC.