Systems and circuits include an amplifier having an output; a switching circuit coupled to the output of the amplifier to provide a bias current to bias the amplifier; first current generating circuitry coupled to the switching circuit; and second current generating circuitry coupled to the output of the amplifier and to the switching circuit. In operation, the switching circuit provides the bias current, during a first time period, in response to a first signal generated by the first current generating circuitry, and provides the bias current, during a second time period, after the first time period, in response to a second signal generated by the second current generating circuitry.

In examples, an apparatus includes a FET, first and second voltage-to-current circuits, a current selection circuit, and a comparator. The FET has first and second segments. The first segment has a first gate coupled to the first voltage-to-current circuit, a first source, and a first drain. The second segment has a second gate coupled to the second voltage-to-current circuit, a second source coupled to the first source, and a second drain coupled to the first drain. The current selection circuit has a current selection circuit output and first and second current selection inputs. The first current selection circuit input is coupled to the first voltage-to-current circuit. The second current selection circuit input is coupled to the second voltage-to-current circuit. The comparator has a comparator output and first and second comparator inputs, the first comparator input is coupled to the current selection circuit output.

Various implementations described herein are directed to multi-stage system. The system may include a first stage having a current bias generator that generates a biasing current. The system may include a second stage that is coupled to the first stage, and the second stage may include a load that utilizes the biasing current generated by the current bias generator.

The present invention concerns an electronic circuit power supply device, configured to: flow, through a first conductor connected to a node, a first current that is an image of a second current consumed by the electronic circuit; flow a third current through a second conductor connected to the node, a first branch of a current mirror conducting the third current; flow a fourth constant current through a third conductor connected to the node; consume a fifth current that is an image of the third current; and regulate a potential of the node by acting on a gate potential of a transistor electrically in series with a second branch of the current mirror.

The present disclosure relates to circuitry comprising: digital circuitry configured to generate a digital output signal; and monitoring circuitry configured to monitor a supply voltage to the digital circuitry and to output a control signal for controlling operation of the digital circuitry, wherein the control signal is based on the supply voltage.

A bias circuit includes a mirror current source and a current-to-voltage converter. A first terminal of the mirror current source is connected to a supply voltage terminal, a second terminal of the mirror current source is connected to a reference voltage terminal, and a third terminal of the mirror current source is connected to the current-to-voltage converter. A mirror current source is configured to acquire a supply voltage transmitted at the supply voltage terminal through the first terminal, acquire a reference voltage transmitted at the reference voltage terminal through the second terminal, and regulate the supply voltage by using the reference voltage and a preset parameter to obtain a mirror current corresponding to the supply voltage. The preset parameter is parameter information of the mirror current source. The current-to-voltage converter is configured to convert the mirror current into a voltage to provide a bias voltage based on the voltage.

Methods, systems, and apparatuses for producing a compensated voltage reference. The method includes operating a voltage reference circuit. The method also includes activating a first compensation circuit when an operating temperature is less than or equal to a first temperature threshold. The first compensation circuit is configured to extract a first compensation current from the voltage reference circuit. The method further includes deactivating the first compensation circuit when the operating temperature is greater than the first temperature threshold. The method also includes activating a second compensation circuit when the operating temperature is greater than or equal to a second temperature threshold. The second compensation circuit is configured to extract a second compensation current from voltage reference circuit. The second temperature threshold is greater than the first temperature threshold. The method further includes deactivating the second compensation circuit when the operating temperature is less than the second temperature threshold.

Methods, systems, and devices for apparatus for differential memory cells are described. An apparatus may include a pair of memory cells comprising a first memory cell and a second memory cell, a word line coupled with the pair of memory cells and a plate line coupled with the pair of memory cells. The apparatus may further include a first digit line coupled with the first memory cell and a sense amplifier and a second digit line coupled with the second memory cell and the sense amplifier. The apparatus may include a select line configured to couple the first digit line and the second digit line with the sense amplifier.

An electronic device includes a semiconductor substrate and a bidirectional transistor switch formed on the substrate, the bidirectional switch including a first source node, a second source node and a common drain node. A first transistor is formed on the substrate and includes a first source terminal, a first drain terminal and a first gate terminal, wherein the first source terminal is connected to the substrate, the first drain terminal is connected to the first source node and the first gate terminal is connected to the second source node. A second transistor is formed on the substrate and includes a second source terminal, a second drain terminal and a second gate terminal, wherein the second source terminal is connected to the substrate, the second drain terminal is connected to the second source node and the second gate terminal is connected to the first source node.

A neurostimulator incorporating a novel chip design that uses the principle of redundant signal crossfiring to overcome electronic component mismatch error in general and transistor mismatch error in particular, to yield superior quality neurostimulation signal generation, useful in enhancing the bidirectional human-machine interface in prosthesis operation for the restoration of somatosensation for an amputee.