During operation of an IC component within a first range of temperatures, a first bias voltage is applied to a first substrate region disposed adjacent a first plurality of transistors to effect a first threshold voltage for the first plurality of transistors. During operation of the IC component within a second range of temperatures that is distinct from and lower than the first range of temperatures, a second bias voltage is applied to the first substrate region to effect a second threshold voltage for the first plurality of transistors that is at least as low as the first threshold voltage.

Bandgap reference circuitry comprises a first current mirror connected to a power supply line and configured to supply a first current to a first node and a second current to a second node virtually-shorted to the first node, a first pn junction element between the first node and a ground line; a first variable resistor element between the second node and the ground line, and a second pn junction element connected in series to the first variable resistor element. The first variable resistor element has a resistance dependent on a power supply voltage supplied to the power supply line.

The object of the present invention is to provide a current source which is capable of suppressing an increase in circuit size and by which a highly accurate constant current extremely stable to manufacturing variations or temperature fluctuations can be obtained. A current source circuit is provided with a nonvolatile storage element having a control gate region and a source region and operating as a field-effect transistor, and is configured to output a current in a state where a bias is applied between the control gate region and the source region.

A band-gap reference circuit including a charge pump circuit and a reference circuit is disclosed. The charge pump circuit is powered by a supply voltage and thereby outputs a regulating voltage which is higher than the supply voltage and powers the reference circuit such that the reference circuit outputs a band-gap reference voltage. Powering the reference circuit with the regulating voltage that is made higher than the supply voltage by the charge pump circuit enables 1) normal operation of the band-gap reference circuit at the supply voltage that is lower than a lowest voltage required by the band-gap reference circuit; and 2) minimization (almost elimination) of fluctuations in the regulating voltage output from the charge pump circuit and hence a stable and more accurate band-gap reference voltage output from the band-gap reference circuit.

A reference current source 100 includes a reference voltage circuit 110, generating a reference voltage Vref; a voltage division circuit 130, dividing the reference voltage Vref and outputting a divided voltage Vdiv; and an output MOS transistor 140, supplying a reference current Iref in response to the divided voltage Vdiv being applied to a gate terminal 140G. The reference voltage circuit 110 includes a depletion type MOS transistor 111, and an enhancement type MOS transistor 112 having same conductivity type and impurity concentration as a channel 111c of the depletion type MOS transistor 111 and a different Fermi level from a gate electrode 111g of the depletion type MOS transistor 111. The voltage division circuit 130 outputs the divided voltage Vdiv within a voltage range which is 0V or above and lower than a cross point X to the gate terminal 140G of the output MOS transistor 140.

Trimming components within an oscillator comprising: a trim-capable current source, wherein the trim-capable current source comprises a trimmable resistor and a trimmable current component, a comparator comprising a first input terminal that couples to the trim-capable current source and the second input terminal that couples to a reference voltage source, a switch coupled to the first input terminal and the trim-capable current source, and a trim-capable capacitor coupled to the switch, wherein the switch is coupled between the trim-capable capacitor and the trim-capable current source.

There is a need to ensure operations at a predetermined operating frequency when a temperature changes in an operating state. A semiconductor device includes: a bias-applied portion applied with a substrate bias; a temperature sensor to detect a temperature; and a substrate bias generator to apply the bias-applied portion with a substrate bias corresponding to the temperature detected by the temperature sensor. The bias-applied portion, while applied with a substrate bias by the substrate bias generator, shifts between an operating state and a stopped state. The substrate bias generator applies the bias-applied portion with a substrate bias configured so as not to cause an upper limit of an operating frequency for the bias-applied portion to be smaller than a predetermined value under condition of the temperature detected by the temperature sensor.

A regulator circuit includes an output controlling transistor and a controller circuit. The output controlling transistor is connected between a voltage input terminal and an output terminal. The controller circuit includes an error amplifier circuit which controls the output controlling transistor according to an output feedback voltage. The error amplifier circuit includes a differential input stage, an output stage and a current increasing/decreasing circuit. The differential input stage includes input transistors and a current source. The output stage includes a current source and a transistor connected in series with the current source and amplifies a potential at one output node of the differential input stage. The current increasing/decreasing circuit includes an element having a temperature characteristic, and increases or decreases a current of the differential input stage or the current of the output stage according to the temperature characteristic.

A semiconductor device includes: an integrated circuit (IC) including an internal circuit; and a mismatch detection and correction circuit connected to the internal circuit of the IC, the mismatch detection and correction circuit configured to detect a process mismatch and correct an error in the internal circuit caused by the process mismatch using a current difference between a first current and a second current based on a charged voltage of a capacitor.

A power semiconductor circuit includes a power semiconductor device for switching a load, and a comparator which is directly or indirectly connected to the power semiconductor device at a connection point for the load by means of a first input and to which a predefined or predefinable reference voltage can be fed at a second input, the power semiconductor device being activatable by means of an output of the comparator.