A thin film resistor formed using thermal spraying techniques in the manufacturing process is provided. A thin film resistor and method of manufacturing a thin film resistor are disclosed including a thermally sprayed resistive element. An alloy bond layer may be applied to a substrate and a thermally sprayed resistive layer is applied to the alloy bond layer by a thermal spraying process to form a thermally sprayed resistive element. The alloy bond layer and the thermally sprayed resistive layer may have the same chemical composition.

A semiconductor device includes: a substrate; a first wiring layer arranged above the substrate; a first insulating film covering the first wiring layer; a lower oxidation preventing film arranged on the first insulating film; at least one thin-film resistor arranged on the lower oxidation preventing film; an upper oxidation preventing film arranged on the at least one thin-film resistor; a second insulating film covering the lower oxidation preventing film, the at least one thin-film resistor, and the upper oxidation preventing film; a second wiring layer arranged on the second insulating film; and a third insulating film covering the second wiring layer. The first wiring layer overlaps an end portion of the at least one thin-film resistor when viewed in a normal direction of one surface of the substrate.

An NTC thin film thermistor that includes at least a first thin film electrode, at least an NTC thin film, and at least a second thin film electrode. A further aspect relates to a method for producing an NTC thin film thermistor.

A method for forming a thin film resistor with improved thermal stability is disclosed. A substrate having thereon a first dielectric layer is provided. A resistive material layer is deposited on the first dielectric layer. A capping layer is deposited on the resistive material layer. The resistive material layer is then subjected to a thermal treatment at a pre-selected temperature higher than 350 degrees Celsius in a hydrogen or deuterium atmosphere. The capping layer and the resistive material layer are patterned to form a thin film resistor on the first dielectric layer.

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.

A thin-film resistive element includes: a first electrode that is formed with a conductor formed in an annular shape in a planar view; a second electrode that is formed with a conductor disposed at a distance from the first electrode in a region surrounded by the first electrode; and a thin-film resistor that is electrically connected to the first electrode and the second electrode.

A novel integrated circuit and method thereof are provided. The integrated circuit includes a plurality of first interconnect pads, a plurality of second interconnect pads, a first inter-level dielectric layer, a thin film resistor, and at least two end-caps. The end-caps, which are connectors for the thin film resistor, are positioned at the same level with the plurality of second interconnect pads. Therefore, an electrical connection between the end-caps and the plurality of second interconnect pads can be formed by directly connection of them. An integrated circuit with a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.

A semiconductor device includes: a metal thin film disposed on a semiconductor substrate; and first and second contact structures disposed on the metal thin film, wherein the first and second contact structures are laterally spaced from each other by a dummy layer that comprises at least one polishing resistance material.

A thin film resistor (TFR) module may be formed in copper interconnect in an integrated circuit device. A pair of displacement-plated TFR heads may be formed by forming a pair of copper TFR head elements (e.g., damascene trench elements) spaced apart from each other in a dielectric region, and displacement plating a barrier region on each TFR head element to form a displacement-plated TFR head. A TFR element may be formed on the pair of displacement-plated TFR heads to define a conductive path between the pair of TFR head elements through the TFR element and through the displacement-plated barrier region on each metal TFR head. Conductive contacts may be formed connected to the pair of displacement-plated TFR heads. The displacement-plated barrier regions may protect the copper TFR heads from copper corrosion and/or diffusion, and may comprise CoWP, CoWB, Pd, CoP, Ni, Co, Ni—Co alloy, or other suitable material.

A GmAPD FPA having increased tolerance optical overstress includes a limit resistor that is monolithically integrated into each pixel in the FPA, and which limits the magnitude of the current entering the read out integrated circuit.