A method for fabricating a micro resistance layer and a method for fabricating a micro resistor are provided. The method for fabricating a micro resistance layer includes: providing a substrate; forming a first resistance layer on the substrate by using a screen printing process or a sputtering process; dividing the first resistance layer into second resistance layers, wherein each one of the product regions includes a second resistance layer, and an area of each one of the product regions is smaller than 0.4*0.2 mm.sup.2; and trimming the second resistance layer of each one of the product regions according to a predetermined resistance value to enable the pattern of each one of the second resistance layers to correspond to the predetermined resistance value. The method for fabricating a micro resistor uses the method for fabricating a micro resistance layer for fabrication of the micro resistor.

A chip resistor includes a substrate, two top electrodes, a resistor element, two back electrodes, and two side electrodes. The substrate has a top surface, a back surface and two side surface. The top and back surfaces face away in the thickness direction of the substrate. The side surfaces, spaced apart in a predetermined direction orthogonal to the thickness direction, are connected to the top and back surfaces. The top electrodes, spaced apart in the predetermined direction, are in contact with the top surface. The resistor element, disposed on the top surface, is connected to the top electrodes. The back electrodes, spaced apart in the predetermined direction, are in contact with the back surface. The side electrodes, held in contact with the side surfaces, are connected to the top and back electrodes. Each back electrode has a first and a second layer. The first layer is in contact with the back surface. The second layer, covering a part of the first layer, is made of a material containing metal particles and synthetic resin.

A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

A shunt resistor (1) includes: a resistance element (3); a first electrode (5A) and a second electrode (5B) coupled to both sides of the resistance element (3); a first fusion material (6A) and a second fusion material (6B) electrically coupled to the first electrode (5A) and the second electrode (5B), respectively, the first fusion material (5A) and the second fusion material (5B) haying electric conductivity; and at least one board (10) coupled to the first electrode (5A) and the second electrode 15B) by the first fusion material (6A) and the second fusion material (6B). The first fusion material (6A) is arranged in a first through-hole (7A) formed in the first electrode (5A) or the board (10), and the second fusion material (6B) is arranged it as second through-hole (7B) formed in the second electrode (5B) or the board (10).

According to some aspects of the present disclosure, a temperature sensor assembly includes a thermistor including a first lead and a second lead, and a nonconductive separator defining at least two channels, with the first lead positioned in a first one of the channels and the second lead positioned in a second one of the channels to electrically isolate the first lead from the second lead. The assembly also includes a cable including a first conductor wire and a second conductor wire, with the first conductor wire coupled to the first lead and the second conductor wire coupled to the second lead, and a tube at least partially enclosing the thermistor, the nonconductive separator, and at least a portion of the cable. Methods for connecting thermistors to cables are also disclosed.

According to some aspects of the present disclosure, a temperature sensor assembly includes a thermistor including a first lead and a second lead, and a nonconductive separator defining at least two channels, with the first lead positioned in a first one of the channels and the second lead positioned in a second one of the channels to electrically isolate the first lead from the second lead. The assembly also includes a cable including a first conductor wire and a second conductor wire, with the first conductor wire coupled to the first lead and the second conductor wire coupled to the second lead, and a tube at least partially enclosing the thermistor, the nonconductive separator, and at least a portion of the cable. Methods for connecting thermistors to cables are also disclosed.

A resistor element includes a base substrate, a resistor layer disposed on one surface of the base substrate, a first electrode layer and a second electrode layer disposed on the resistor layer spaced apart from each other, a third electrode layer disposed between the first electrode layer and the second electrode layer to be spaced apart from the first electrode layer and the second electrode layer and being thicker than each of the first electrode layer and the second electrode layer, and first to third plating layers disposed on the first to third electrode layers, respectively.

A method of manufacturing an electronic circuit (or circuit module) (100) is disclosed. The electronic circuit comprises a transistor (1) and a resistor (2), the transistor comprising a source terminal (11), a drain terminal (12), a gate terminal (13), and a first body (10) of material providing a controllable semi-conductive channel between the source and drain terminals, and the resistor comprises a first resistor terminal (21), a second resistor terminal (22), and a second body (20) of material providing a resistive current path between the first resistor terminal and the second resistor terminal. The method comprises: forming the first body (10); and forming the second body (20), wherein the first body comprises a first quantity (100) of a metal oxide and the second body comprises a second quantity (200) of said metal oxide. Corresponding electronic circuits are disclosed.

A method of manufacturing an electronic circuit (or circuit module) (100) is disclosed. The electronic circuit comprises a transistor (1) and a resistor (2), the transistor comprising a source terminal (11), a drain terminal (12), a gate terminal (13), and a first body (10) of material providing a controllable semi-conductive channel between the source and drain terminals, and the resistor comprises a first resistor terminal (21), a second resistor terminal (22), and a second body (20) of material providing a resistive current path between the first resistor terminal and the second resistor terminal. The method comprises: forming the first body (10); and forming the second body (20), wherein the first body comprises a first quantity (100) of a metal oxide and the second body comprises a second quantity (200) of said metal oxide. Corresponding electronic circuits are disclosed.

To provide a chip resistor in which a resistive element can be surely protected from an external environment and which is also excellent in corrosion resistance, a chip resistor 1 is configured to include an insulating substrate 2, a pair of front electrode 3 provided on opposite end portions of a front surface of the insulating substrate 2, a pair of back electrodes 7 provided on opposite end portions of a back surface of the insulating substrate 2, a resistive element 4 provided to extend onto the two front electrodes 3, a first insulating layer 5 covering the resistive element 4, a second insulating layer 6 made of a resin material to cover the first insulating layer 5, end surface electrodes 8 establishing electrical continuity between the front electrodes 3 and the back electrodes 7, plating layers 9 covering the end surface electrodes 8, etc. Rough surface portions 6a made rougher in surface roughness than any other portion of the second insulating layer 6 are formed at opposite end portions of the second insulating layer 6. End portions of the end surface electrodes 8 and the plating layers 9 are brought into tight contact with the rough surface portions 6a respectively.