A capacitor structure, a method for manufacturing a capacitor structure and a method for operating a capacitor structure are provided. The capacitor structure includes a first electrode and a second electrode; a dielectric layer between the first electrode and the second electrode; and an oxygen donor layer between the dielectric layer and the first electrode. An oxygen concentration of the oxygen donor layer increases along a thickness direction from a first surface proximal to the dielectric layer to a second surface proximal to the first electrode.

A capacitor structure, a method for manufacturing a capacitor structure and a method for operating a capacitor structure are provided. The capacitor structure includes a first electrode and a second electrode; a dielectric layer between the first electrode and the second electrode; and an oxygen donor layer between the dielectric layer and the first electrode. An oxygen concentration of the oxygen donor layer increases along a thickness direction from a first surface proximal to the dielectric layer to a second surface proximal to the first electrode.

In a method of manufacturing a multilayer chip component according to an aspect of the present disclosure, laser processing is used for forming dots of a two-dimensional code. This laser processing is laser processing with respect to a laminate substrate in a state before baking is performed, and an impact at the time of processing is absorbed to a certain degree due to elastic deformation of the laminate substrate. For this reason, according to the manufacturing method, occurrence of cracking can be curbed compared to laser processing with respect to an element body in a state after baking is performed.

In a method of manufacturing a multilayer chip component according to an aspect of the present disclosure, laser processing is used for forming dots of a two-dimensional code. This laser processing is laser processing with respect to a laminate substrate in a state before baking is performed, and an impact at the time of processing is absorbed to a certain degree due to elastic deformation of the laminate substrate. For this reason, according to the manufacturing method, occurrence of cracking can be curbed compared to laser processing with respect to an element body in a state after baking is performed.

A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

A plurality of capacitors and a holding body constructed to hold the plurality of capacitors. Each of the plurality of capacitors includes a semiconductor substrate, a first electrode layer, a dielectric layer, a second electrode layer, and an outer electrode. Among a first capacitor and a second capacitor of the plurality of capacitors, the second capacitor has a shape different from a shape of the first capacitor in at least one of the first electrode layer, the second electrode layer, and the outer electrode.

Embodiments described herein may be related to apparatuses, processes, and techniques related to forming capacitors using lines in a bond pad layer within hybrid bonding techniques of two separate dies and then coupling those dies. In embodiments, these techniques may involve using dummy bond pads, where the width of these dummy bond pads are smaller than that of active bond pads, to create a pattern to serve as a capacitor structure. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to forming capacitors using lines in a bond pad layer within hybrid bonding techniques of two separate dies and then coupling those dies. In embodiments, these techniques may involve using dummy bond pads, where the width of these dummy bond pads are smaller than that of active bond pads, to create a pattern to serve as a capacitor structure. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to creating capacitors at the interface of a glass substrate. These capacitors may be three-dimensional (3-D) capacitors formed using trenches within the glass core of the substrate using laser-assisted etching techniques. A first electrode may be formed on the glass, including on the surface of trenches or other features etched in the glass, followed by a deposition of a dielectric material or a capacitive material. A second electrode may then be formed on top of the dielectric material. Other embodiments may be described and/or claimed.

Embodiments described herein may be related to apparatuses, processes, and techniques related to creating capacitors at the interface of a glass substrate. These capacitors may be three-dimensional (3-D) capacitors formed using trenches within the glass core of the substrate using laser-assisted etching techniques. A first electrode may be formed on the glass, including on the surface of trenches or other features etched in the glass, followed by a deposition of a dielectric material or a capacitive material. A second electrode may then be formed on top of the dielectric material. Other embodiments may be described and/or claimed.