A method of producing a dielectric material by preparing a slurry by mixing a dielectric powder, water, one of an organic-acid metal salt and an inorganic metal salt, and an organic silicon compound, causing the slurry to come into contact with an anion exchange resin to remove an anion derived from the one of the organic-acid metal salt and the inorganic metal salt from the slurry, and drying the slurry to obtain the dielectric material.

A film capacitor that includes first and second dielectric films, first and second inner electrodes, and first and second outer electrodes. The first inner electrode includes a first connection portion, a first main electrode portion joined to the first connection portion and thinner than the first connection portion, and a first thin portion extending from the first main electrode portion and thinner than the first main electrode portion. The second inner electrode includes a second connection portion and a second main electrode portion joined to the second connection portion and thinner than the second connection portion. The first main electrode portion opposes the second main electrode portion across the first dielectric film. The second connection portion includes a reduction region having a thickness that decreases from the second connection portion toward the second main electrode portion. The first thin portion opposes the reduction region across the first dielectric film.

A film capacitor that includes first and second dielectric films, first and second inner electrodes, and first and second outer electrodes. The first inner electrode includes a first connection portion, a first main electrode portion joined to the first connection portion and thinner than the first connection portion, and a first thin portion extending from the first main electrode portion and thinner than the first main electrode portion. The second inner electrode includes a second connection portion and a second main electrode portion joined to the second connection portion and thinner than the second connection portion. The first main electrode portion opposes the second main electrode portion across the first dielectric film. The second connection portion includes a reduction region having a thickness that decreases from the second connection portion toward the second main electrode portion. The first thin portion opposes the reduction region across the first dielectric film.

A metal capacitor provided includes a first metal layer and a second metal layer disposed above a substrate. The first metal layer includes a first electrode sheet and a second electrode sheet, and the second metal layer includes a third electrode sheet and a fourth electrode sheet. The first electrode sheet and the second electrode sheet collectively form a first coplanar capacitor. The third electrode sheet and the fourth electrode sheet collectively form a second coplanar capacitor. At least a portion of the fourth electrode sheet is arranged above the first electrode sheet, and the first electrode sheet and the fourth electrode sheet collectively form a first vertical capacitor. At least a portion of the third electrode sheet is arranged above the second electrode sheet, and the second electrode sheet and the third electrode sheet collectively form a second vertical capacitor.

A metal capacitor provided includes a first metal layer and a second metal layer disposed above a substrate. The first metal layer includes a first electrode sheet and a second electrode sheet, and the second metal layer includes a third electrode sheet and a fourth electrode sheet. The first electrode sheet and the second electrode sheet collectively form a first coplanar capacitor. The third electrode sheet and the fourth electrode sheet collectively form a second coplanar capacitor. At least a portion of the fourth electrode sheet is arranged above the first electrode sheet, and the first electrode sheet and the fourth electrode sheet collectively form a first vertical capacitor. At least a portion of the third electrode sheet is arranged above the second electrode sheet, and the second electrode sheet and the third electrode sheet collectively form a second vertical capacitor.

A double-sided copper-clad laminate that includes an adhesive layer and a copper foil in order on each of both surfaces of a resin film, the resin film is in a cured state at 25° C., and each of the copper foils has a maximum peak height Sp of 0.05 μm or more and 3.3 μm or less as measured in accordance with ISO 25178 on a surface on a side being in contact with the adhesive layer.

An electronic component includes: a conductive pattern provided on the main surface of a substrate and constituting a lower electrode; a dielectric film that covers top and side surfaces of the conductive pattern; and a conductive pattern stacked on the top surface of the conductive pattern through the dielectric film and constituting an upper electrode. A part of the dielectric film that is parallel to the main surface of the substrate is removed at least partly. Partially removing a part of the dielectric film that is parallel to the main surface of the substrate allows stress relaxation. This prevents peeling at the interface between the lower electrode and the dielectric film.

A structural body that includes: a substrate; a plurality of fibrous materials, each of the plurality of fibrous material including a fibrous core material and a covering layer that covers the fibrous core material such that an exposed portion of the fibrous core material is formed at an end portion thereof; and an adhesive layer that bonds the substrate and the end portion of each of the plurality of fibrous materials to each other such that a boundary between the covering layer and the exposed portion is located inside the adhesive layer.

In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

An integrated circuit device includes a capacitor structure, wherein the capacitor structure includes: a bottom electrode over a substrate; a supporter on a sidewall of the bottom electrode; a dielectric layer on the bottom electrode and the supporter; and a top electrode on the dielectric layer and covering the bottom electrode. The bottom electrode comprises: a base electrode layer over the substrate and extending in a first direction that is perpendicular to a top surface of the substrate, and a conductive capping layer including niobium nitride that is between a sidewall of the base electrode layer and the dielectric layer, and also between a top surface of the base electrode layer and the dielectric layer.