A MEMS device comprises an electro mechanical element in a sealed chamber containing a gas comprising a reactive gas selected to react with any contaminants that may be present or formed on the operating surfaces of the device in a manner to maximize the electrical conductivity of the surfaces during operation of the device. The MEMS device may comprise a MEMS switch having electrical contacts as the operating surfaces. The reactive gas may comprise hydrogen or an azane, optionally mixed with an inert gas, or any combination of the gases. The corresponding process provides a means to substantially reduce or eliminate contaminants present or formed on the operating surfaces of MEMS devices in a manner to maximize the electrical conductivity of the surfaces during operation of the devices.

An actuator is configured to include a first substrate that has a first conductive surface, which may be or include a first conductive electrode layer. The actuator also includes a second substrate that has a second conductive surface, which may be or include a second conductive electrode layer. The first and second conductive surfaces face toward each other across a compression space between the first and second substrates. A group of elastic support nodules span the compression space and separate the first and second conductive surfaces. The compression space is less than fully filled with solid elastic material and is configured to be compressed by relative movement of the first and second conductive surfaces toward each other in response to a voltage difference between the first and second conductive surfaces.

The switch contacts of a MEMS relay for a circuit interrupter are coated with a thin layer of liquid metal, and the MEMS relay is disposed in a sealed enclosure containing a gas medium. The gas medium provides an environmentally desirable alternative to sulfur hexafluoride (SF.sub.6), prevents oxidation of the liquid metal coating the relay switch contacts, and has sufficient dielectric strength in order to prevent current flow after separation of the switch contacts.

A method of fabricating and packaging an ohmic micro-electro-mechanical system (MEMS) switch device may comprise constructing the switch device on an insulating substrate. The switch device may have contacts that consist of a platinum-group metal. The method may further comprise forming an oxidized layer of the platinum-group metal on an outer surface of each of the one or more contacts. The method may further comprise bonding an insulating cap to the insulating substrate, to hermetically seal the switch device. The bonding may occur in an atmosphere that has a proportion of oxygen within a range of 0.5% to 30%, such that, after the switch device has been hermetically sealed within the sealed cavity, an atmosphere within the sealed cavity has a proportion of oxygen within the range of 0.5% to 30%. The platinum-group metal may be ruthenium, and the oxidized layer of the platinum-group metal may be ruthenium dioxide.

An electrostatic protection device (10) includes: a first conductive layer (110), a second conductive layer (140) and a polarization film layer (130), in which the polarization film layer (130) is disposed between the first conductive layer (110) and the second conductive layer (140) and formed of a piezoelectric material which is capable of deforming when applied with electricity; a conductive cantilever (150), disposed on the second conductive layer (140) and including a free end (152); and a charge diffusion layer (170), disposed at a side of the conductive cantilever (150) away from the polarization film layer (130), electrically connected with the first conductive layer (110) and spaced apart from the conductive cantilever (150), in which upon a voltage difference between the first conductive layer (110) and the second conductive layer (140) reaching a predetermined value, the polarization film layer (130) deforms to allow the conductive cantilever (150) to connect with the charge diffusion layer (170). The device provides the conductive cantilever (150) which is in a suspended state in a case where the voltage difference between the first conductive layer (110) and the second conductive layer (140) does not reach the predetermined value, so the first conductive layer (110) and the second conductive layer (140) are disconnected so that the load of the first conductive layer (110) and the second conductive layer (140) are prevented from being influenced.

A power distribution switch including a micro electro mechanical system (MEMS) relay switch matrix disposed between a power source and an electrical load, and a controller module configured to operate the MEMS relay switch between a conducting and a non-conducting state, wherein the conducting state conducts power from the power source to the electrical load and the non-conducting state prevents power conduction from the power sources to the electrical load.

Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a switch device that shifts frequency of a resonator in a quantum device are provided. According to an embodiment, a device can comprise a readout resonator coupled to a qubit. The device can further comprise a switch device formed across the readout resonator that shifts frequency of the readout resonator based on position of the switch device. According to another embodiment, a device can comprise a bus resonator coupled to a plurality of qubits. The device can further comprise a switch device formed across the bus resonator that shifts frequency of the bus resonator based on position of the switch device.

An electromechanical power switch device and methods thereof. At least some of the illustrative embodiments are devices including a semiconductor substrate, at least one integrated circuit device on a front surface of the semiconductor substrate, an insulating layer on the at least one integrated circuit device, and an electromechanical power switch on the insulating layer. By way of example, the electromechanical power switch may include a source and a drain, a body region disposed between the source and the drain, and a gate including a switching metal layer. In some embodiments, the body region includes a first body portion and a second body portion spaced a distance from the first body portion and defining a body discontinuity therebetween. Additionally, in various examples, the switching metal layer may be disposed over the body discontinuity.

Provided is an electrostatic drive switch, which includes a source plate to which a voltage for driving the electrostatic drive switch is applied and a drain electrode spaced apart from the source plate. The source plate includes a source electrode and an elastic part connected to the source electrode, and a first material and a second material having lower hardness than the first material are provided on the source electrode. When the source electrode and the drain electrode are electrically connected to each other by the voltage, the second material is brought into contact with the drain electrode by the elastic part after the first material is brought into contact with the drain electrode by the elastic part.

According to one embodiment, a MEMS element includes a first member, and an element part. The element part includes a first fixed electrode fixed to the first member, a first movable electrode facing the first fixed electrode, a first conductive member electrically connected to the first movable electrode, and a second conductive member electrically connected to the first movable electrode. The first conductive member and the second conductive member support the first movable electrode to be separated from the first fixed electrode in a first state before a first electrical signal is applied between the second conductive member and the first fixed electrode. The first conductive member and the second conductive member are in a broken state in a second state after the first electrical signal is applied between the second conductive member and the first fixed electrode.