Patent classifications
H01J9/42
Charged particle device, structure manufacturing method, and structure manufacturing system
A charged particle device includes an electron emitting part for emitting electrons, an electron irradiated part configured to be irradiated with the electrons emitted from the electron emitting part, a container part configured to evacuate an interior thereof and contain the electron irradiated part in the interior thereof, an electric wire containing part configured to be inserted from an outside of the container part via an insertion part provided in the container part to contain an electric wire through which electricity is conducted to the electron irradiated part contained in the container part, and an insertion-part-side protrusion part configured to surround the electric wire containing part and protrude from a vicinity of the insertion part on an inner wall of the container part to an interior of the container part.
Charged particle device, structure manufacturing method, and structure manufacturing system
A charged particle device includes an electron emitting part for emitting electrons, an electron irradiated part configured to be irradiated with the electrons emitted from the electron emitting part, a container part configured to evacuate an interior thereof and contain the electron irradiated part in the interior thereof, an electric wire containing part configured to be inserted from an outside of the container part via an insertion part provided in the container part to contain an electric wire through which electricity is conducted to the electron irradiated part contained in the container part, and an insertion-part-side protrusion part configured to surround the electric wire containing part and protrude from a vicinity of the insertion part on an inner wall of the container part to an interior of the container part.
Electron emission element and method for same
An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).
Electron emission element and method for same
An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).
Chip testing method and an apparatus for testing of a plurality of field emission light sources
The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.
A CHIP TESTING METHOD AND AN APPARATUS FOR TESTING OF A PLURALITY OF FIELD EMISSION LIGHT SOURCES
The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.
Apparatus for aging field emission device and aging method thereof
The inventive concept relates to an apparatus for aging a field emission device configured to emitting electrons based on an electric field between a first electrode and a second electrode, and an aging method thereof. The apparatus according to an embodiment of an inventive concept includes a voltage generator and a current controller. The voltage generator increases the voltage applied to the first electrode to the target voltage level during the first time. The current controller increases the field emission current for the second time to the target current level and increases the pulse width of the field emission current for the third time to the target pulse width. According to the inventive concept, the performance of a large field emission device may be improved with high efficiency and low cost.
Apparatus for aging field emission device and aging method thereof
The inventive concept relates to an apparatus for aging a field emission device configured to emitting electrons based on an electric field between a first electrode and a second electrode, and an aging method thereof. The apparatus according to an embodiment of an inventive concept includes a voltage generator and a current controller. The voltage generator increases the voltage applied to the first electrode to the target voltage level during the first time. The current controller increases the field emission current for the second time to the target current level and increases the pulse width of the field emission current for the third time to the target pulse width. According to the inventive concept, the performance of a large field emission device may be improved with high efficiency and low cost.
ELECTRON EMISSION ELEMENT AND METHOD FOR SAME
An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).
ELECTRON EMISSION ELEMENT AND METHOD FOR SAME
An electron emitting device (100) includes a first electrode (12), a second electrode (52), and a semi-conductive layer (30) provided between the first electrode (12) and the second electrode (52). The semi-conductive layer (30) includes a porous alumina layer (32) having a plurality of pores (34) and silver (42) supported in the plurality of pores (34) of the porous alumina layer (32).