Tweezers 8, which can grip a sample piece 9, includes a gripping member 8a1 and a gripping member 8a2. The gripping member 8a1 includes a gripping region 8c1 and an abutment region 8b1, and the gripping member 8a2 includes a gripping region 8c2 and an abutment region 8b2. The gripping region 8c1 and the gripping region 8c2 include a gripping surface SF1 and a gripping surface SF2 for gripping the sample piece 9, respectively. The abutment region 8b1 protrudes from the gripping region 8c1 in a direction directed from the gripping surface SF1 to the gripping surface SF2, and the abutment region 8b2 protrudes from the gripping region 8c2 in a direction directed from the gripping surface SF2 to the gripping surface SF1.

A device and method for the controlled processing of at least one workpiece (1), comprising a workpiece carrier (2) on which at least one workpiece receptacle (2.1) is present remote from a rotary shaft (2.0), at least one processing unit (3) and at least one inspection unit (4), which are offset relative to the rotary shaft (2.0) by an angular distance (β.sub.n) from one another, are each arranged so that they can be adjusted and moved in a translational manner radially with respect to the rotary shaft (2.0), so that a processing beam (E) and an inspection beam (P), offset relative to one another by the angular distance (β.sub.n), describe the same spiral-shaped movement path (S) relative to the workpiece carrier (2), and the inspection results derived at an inspection point (P.sub.P) are used to control process parameters in order to change the effect of the processing beam (E).

A device and method for the controlled processing of at least one workpiece (1), comprising a workpiece carrier (2) on which at least one workpiece receptacle (2.1) is present remote from a rotary shaft (2.0), at least one processing unit (3) and at least one inspection unit (4), which are offset relative to the rotary shaft (2.0) by an angular distance (β.sub.n) from one another, are each arranged so that they can be adjusted and moved in a translational manner radially with respect to the rotary shaft (2.0), so that a processing beam (E) and an inspection beam (P), offset relative to one another by the angular distance (β.sub.n), describe the same spiral-shaped movement path (S) relative to the workpiece carrier (2), and the inspection results derived at an inspection point (P.sub.P) are used to control process parameters in order to change the effect of the processing beam (E).

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric-field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy greater than 500 keV.

The particle beam irradiation apparatus includes: an irradiation unit configured to radiate a particle beam; a first detection unit configured to detect first particles; a second detection unit configured to detect second particles; an image forming unit configured to form an observation image based on a first signal obtained by the detection of the first particles, which is performed by the first detection unit, and to form an observation image based on a second signal obtained by the detection of the second particles, which is performed by the second detection unit; and a control unit configured to calculate a brightness of a first region in the formed first observation image and perform a brightness adjustment of the first detection unit based on a first target brightness as a first brightness adjustment when the brightness of the first region is different from the first target brightness.

The present specification relates to an additive manufacturing apparatus comprising an X-ray reference object (18) for calibrating an electron beam unit in the additive manufacturing apparatus by detecting X-rays generated by sweeping an electron beam from the electron beam unit over a reference surface (19) of the X-ray reference object (18) and processing the detected signals, the X-ray reference object (18) comprising a support body (20) that has a top surface (21) and comprises a plurality of holes (22) in the top surface (21), The X-ray reference object (18) comprises a plurality of target members (23) inserted into the plurality of holes (22) of the support body (20). The present specification also relates to an X-ray detector to be used in the additive manufacturing apparatus, and to a method for calibrating such an additive manufacturing apparatus.

Systems, devices, and methods for performing a non-contact electrical measurement (NCEM) on a NCEM-enabled cell included in a NCEM-enabled cell vehicle may be configured to perform NCEMs while the NCEM-enabled cell vehicle is moving. The movement may be due to vibrations in the system and/or movement of a movable stage on which the NCEM-enabled cell vehicle is positioned. Position information for an electron beam column producing the electron beam performing the NCEMs and/or for the moving stage may be used to align the electron beam with targets on the NCEM-enabled cell vehicle while it is moving.

An apparatus may include an exciter, disposed within a resonance chamber, to generate an RF power signal. The apparatus may include a resonator coil, disposed within the resonance chamber, to receive the RF power signal, and generate an RF output signal; and a pickup loop assembly, to receive the RF output signal and output a pickup voltage signal. The pickup loop assembly may include a pickup loop, disposed within the resonance chamber; and a variable attenuator, disposed at least partially between the resonator coil and the pickup loop. The variable attenuator may include a configurable portion, movable from a first position, attenuating a first amount of the RF output signal, to a second position, attenuating a second amount of the RF output signal, different from the first amount.

A charged particle multi-beam device includes a charged particle source, a collimator lens, a multi-light-source forming unit, and a reduction projection optical system. The multi-light-source forming unit has first to third porous electrodes disposed side by side in an optical axis direction. A plurality of holes for causing the multi-beams to pass is formed in each of the first to third porous electrodes. The first porous electrode and the third porous electrode have the same potential and the second porous electrode has potential different from the potential of the first porous electrode and the third porous electrode. A diameter of the holes on the second porous electrode is formed larger further away from an optical axis such that a surface on which the multi-light sources are located is formed in a shape convex to the charged particle source side.

The present disclosure proposes a crossover-forming deflector array of an electro-optical system for directing a plurality of electron beams onto an electron detection device. The crossover-forming deflector array includes a plurality of crossover-forming deflectors positioned at or at least near an image plane of a set of one or more electro-optical lenses of the electro-optical system, wherein each crossover-forming deflector is aligned with a corresponding electron beam of the plurality of electron beams.