The present invention generally relates to an extraction structure for a UV lighting element. The present invention also relates to a UV lamp comprising such an extraction structure onto a substrate. The extraction structure comprises a plurality of nanostructures for anti-reflecting purposes. The nanostructures are grown on the top surface of at least one of the first and second side of the substrate.

The present invention generally relates to an extraction structure for a UV lighting element. The present invention also relates to a UV lamp comprising such an extraction structure onto a substrate. The extraction structure comprises a plurality of nanostructures for anti-reflecting purposes. The nanostructures are grown on the top surface of at least one of the first and second side of the substrate.

The invention relates to an electron antenna as an anode for a micro- or nano-focus X-ray generation comprising an antenna base and an antenna element arranged on the antenna base such that the antenna element protrudes from a front surface of the antenna base, wherein the antenna is arranged to guide and attract the electrons in its vicinity to the top the antenna element.

The invention relates to an electron antenna as an anode for a micro- or nano-focus X-ray generation comprising an antenna base and an antenna element arranged on the antenna base such that the antenna element protrudes from a front surface of the antenna base, wherein the antenna is arranged to guide and attract the electrons in its vicinity to the top the antenna element.

The present disclosure generally relates to field emission cathode structure for a field emission arrangement, specifically adapted for enhance reliability and prolong the lifetime of the field emission arrangement by arranging a getter element underneath a gas permeable portion of the field emission cathode structure. The present disclosure also relates to a field emission lighting arrangement comprising such a field emission cathode structure and to a field emission lighting system.

The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.

The present invention generally relates to a method for operating a plurality of field emission light sources, specifically for performing a testing procedure in relation to a plurality of field emission light sources manufactured in a chip based fashion. The invention also relates to a corresponding testing system.

The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO.sub.3:Pr.sup.3+, Lu.sub.2Si.sub.2O.sub.2:Pr.sup.3+, LaPO.sub.4:Pr.sup.3+, YBO.sub.3:Pr.sup.3+ and YPO.sub.4:Bi.sup.3+.

The present invention generally relates to a field emission light source and specifically to a field emission light source adapted to emit ultraviolet (UV) light. The light source has a UV emission member provided with an electron-excitable UV emitting material. The material is at least one of LuPO.sub.3:Pr.sup.3+, Lu.sub.2Si.sub.2O.sub.2:Pr.sup.3+, LaPO.sub.4:Pr.sup.3+, YBO.sub.3:Pr.sup.3+ and YPO.sub.4:Bi.sup.3+.

Transition radiation from nanotubes, nanosheets, and nanoparticles and in particular, boron nitride nanomaterials, can be utilized for the generation of light. Wavelengths of light of interest for microchip lithography, including 13.5 nm (91.8 eV) and 6.7 nm (185 eV), can be generated at useful intensities, by transition radiation light sources. Light useful for monitoring relativistic charged particle beam characteristics such as spatial distribution and intensity can be generated.