An integrated circuit packaging is described, including a plurality of electrical circuits developed using a first patterned conductive layer on a base, wherein an electrical circuit is formed by using a masking material, and an interconnection is developed between the electrical circuits, where the interconnection is disposed on at least one side of the first patterned conductive layer and masking material, in which the interconnection is enclosed with a second masking material to form the integrated circuit packaging.

A semiconductor structure includes a semiconductor substrate, a first active area, a second active area, a first trench, at least one raised portion, and a first dielectric. The first active area is in the semiconductor substrate. The second active area is in the semiconductor substrate. The first trench is in the semiconductor substrate and separates the first active area and the second active area from each other. The raised portion is raised from the semiconductor substrate and is disposed in the first trench. The first dielectric is in the first trench and covers the raised portion.

A semiconductor device having metal gates and methods of forming the same are disclosed. The semiconductor device includes a substrate and a gate structure over the substrate. The gate structure includes a gate dielectric layer over the substrate, a barrier layer over the gate dielectric layer, an oxide layer over the barrier layer, and a work function metal layer over the oxide layer.

A semiconductor device includes a capacitor and a resistor. The capacitor includes a first plate, a capacitor dielectric layer disposed over the first plate, and a second plate disposed over the capacitor dielectric layer. The resistor includes a thin film. The thin film of the resistor and the first plate of the capacitor, formed of a same conductive material, are defined in a single patterning process.

A method for separating semiconductor die stacks of a chip-on-wafer assembly is disclosed herein. In one example, divider walls are arranged in a pattern on a first surface of a device wafer such that regions between the divider walls define mounting sites. Die stacks are mounted to the device wafer, wherein individual die stacks are located at a corresponding mounting site between the divider walls. The device wafer is cut through from a second surface that is opposite the first surface of the device wafer, and the divider walls are removed from between the die stacks to form a vacant lane between adjacent die stacks.

A display device has a display region and a side region adjacent to the display region. The display device includes a plurality of display units, a plurality of sensing units, a display driver and a sensor driving unit. The plurality of display units are disposed on a first substrate. The plurality of sensing units correspond to the plurality of display units. The plurality of display units and the plurality of sensing units are disposed in the display region. The display driver is coupled to at least a portion of the plurality of display units, and includes a plurality of first transistors. The sensor driving unit is coupled to at least a portion of the plurality of sensing units, and includes at least one second transistor. The plurality of first transistors is disposed in the side region and the at least one second transistor is disposed in the display region.

A method includes obtaining sensor data associated with a deposition process performed in a process chamber to deposit film on a surface of a substrate. The method further includes generating a plurality of physics based outputs using a transformation function and the sensor data. The method further includes mapping the physics based outputs to a training set. The method further includes training a virtual model based on the training set and the sensor data, wherein the virtual model is trained to generate predictive metrology data associated with the film.

A method is provided for mounting a semiconductor IC to a substrate without a socket or solder. The method includes disposing a guide structure on the substrate. The substrate has multiple contact pads disposed thereon. The substrate also has multiple nuts formed therein for connecting to one or more bolts. The method also includes placing the semiconductor IC inside the guide structure such that the semiconductor IC makes contact with the contact pads. A top plate is disposed on the semiconductor IC. Further, the top plate and the semiconductor IC are fastened to the substrate.

A semiconductor cell structure includes four pairs of conductive segments, a first gate-strip, and a second gate-strip. A first conductive segment is configured to have a first supply voltage, and a second conductive segment is configured to have a second supply voltage. Each of the first gate-strip and the second gate-strip intersects an active zone over a channel region of a transistor. The first gate-strip is conductively connected to the second conductive segment. The semiconductor cell structure also includes a first dummy gate-strip and a second dummy gate-strip. The first dummy gate-strip separates from the first gate-strip by one CPP. The second dummy gate-strip separates from the second gate-strip by one CPP. The first gate-strip and the second gate-strip are separated from each other by two CPPs. The dummy gate-strip and the second dummy gate-strip are separated from each other by four CPPs.

A novel integrated circuit and method thereof are provided. The integrated circuit includes a plurality of first interconnect pads, a plurality of second interconnect pads, a first inter-level dielectric layer, a thin film resistor, and at least two end-caps. The end-caps, which are connectors for the thin film resistor, are positioned at the same level with the plurality of second interconnect pads. Therefore, an electrical connection between the end-caps and the plurality of second interconnect pads can be formed by directly connection of them. An integrated circuit with a thin film resistor can be made in a cost benefit way accordingly, so as to overcome disadvantages mentioned above.