A semiconductor wafer device according to the present invention includes a SiC substrate having an upper surface and a rear surface as a surface on the opposite side to the upper surface, and an impurity implantation layer provided on the entire rear surface of the SiC substrate, formed of a same base material as that forming the SiC substrate, including an impurity, and having a lower transmittance of visible light or infrared light than that of the SiC substrate.

Provided are a multiple-level interconnect structure having a scatterometry test layer and a manufacturing method thereof. The multiple level interconnect structure includes a patterned reflective layer, a bulk reflective layer and a patterned test layer. The patterned reflective layer is disposed on a substrate and includes a first reflective pattern and a second reflective pattern separated from each other. The bulk reflective layer is disposed on the patterned reflective layer. The patterned test layer is disposed on the bulk reflective layer.

A chip for wafer-level testing of fanout chiplet, including: a die; a carrier substrate; a plurality of redistribution layers applied to the carrier substrate; and one or more first conductive pathways in the plurality of redistribution layers, wherein the one or more first conductive pathways each comprise a first end coupled to a corresponding input/output connection point of the die and a second end coupled to a corresponding probing site, wherein the one or more first conductive pathways are not routed through the carrier substrate.

The present disclosure provides a target and a method of performing overlay measurements on a target. The target includes an array of cells comprising a first cell, a second cell, a third cell, and a fourth cell. Each cell includes a periodic structure with a pitch. The periodic structure includes a first section and a second section, separated by a first gap. The target further includes an electron beam overlay target, such that electron beam overlay measurements, advanced imaging metrology, and/or scatterometry measurements can be performed on the target.

A method for bonding detection includes: disposing a liquid crystal component on one side of a growth substrate away from a light-emitting element; disposing a first electrode layer on one side of the liquid crystal component away from the growth substrate, and disposing a first polarizer on one side of the first electrode layer away from the liquid crystal component; disposing a second electrode layer on one side of a transient substrate away from an adhesive layer, and disposing a second polarizer on one side of the second electrode layer away from the transient substrate, polarization directions of the second polarizer and the first polarizer are orthogonal; irradiating the first polarizer with a uniform light; electrifying the first electrode layer and the second electrode layer; and detecting a uniformity and a thickness of the adhesive layer according to the light exited from one side of the second polarizer.

The enclosed disclosure relates to a method and apparatus for depositing functionalized nanoparticles within a semiconductor structure in order to create a nano-layer capable of enhancing imaging and contrast, The semiconductor structure can include any type of VNAND structure or 3D structure, The nanoparticles are formed in high-aspect ratio trenches of the structure and form a nano-layer. The functionalized nanoparticles comprise synthesized nanoparticles as well as organic molecules. The organic molecules are chosen to selectively bind to certain nanoparticles and surface materials.

A system and method for Z-PAT defect-guided statistical outlier detection of semiconductor reliability failures includes receiving electrical test bin data with semiconductor die data for a plurality of wafers in a lot generated by a statistical outlier detection subsystem configured to perform Z-direction Part Average Testing (Z-PAT) on test data generated by an electrical test subsystem after fabrication of the plurality of wafers in the lot, receiving characterization data for the plurality of wafers in the lot generated by a semiconductor fab characterization subsystem during the fabrication of the plurality of wafers in the lot, determining a statistical correlation between the electrical test bin data and the characterization data at a same x, y position on each of the plurality of wafers in the lot, and locating defect data signatures on the plurality of wafers in the lot based on the statistical correlation.

An array substrate, a display panel and methods of manufacturing the same are provided. The method of manufacturing an array substrate according to an embodiment of the present disclosure includes: forming f pixel electrodes and a conductive structure on a substrate through a patterning process, wherein the pixel electrodes arranged in a first direction are connected through the conductive structure; and forming a signal line on the substrate through a patterning process, wherein the signal line and the pixel electrodes are disposed in the same layer. By means of the array substrate according to the embodiments of the present disclosure, the problem that it is not easy to discover the point defects caused by short circuit between the signal line and pixel electrodes in the related art can be solved.

Embodiments of the present disclosure relate to the technical field of integrated circuits, and specifically to a test structure of an integrated circuit. The embodiments of the present disclosure are intended to solve the problem that the related art does not provide a test structure of an integrated circuit. In the test structure of an integrated circuit provided in the present disclosure, there is a first distance between a first N-type heavily doped region and a second N-type heavily doped region, and there is a second distance between the second N-type heavily doped region and a first P-type heavily doped region; electrical parameters of the integrated circuit corresponding to the test structure are tested by adjusting at least one of the first distance and the second distance.

An apparatus for semiconductor manufacturing includes an input port to receive a carrier, wherein the carrier includes a carrier body, a housing installed onto the carrier body, and a filter installed between the carrier body and the housing. The apparatus further includes a first robotic arm to uninstall the housing from the carrier and to reinstall the housing into the carrier; one or more second robotic arms to remove the filter from the carrier and to install a new filter into the carrier; and an output port to release the carrier to production.