Patent classifications
H01L23/02
3D package structure and methods of forming same
An embodiment is method including forming a first die package over a carrier substrate, the first die package comprising a first die, forming a first redistribution layer over and coupled to the first die, the first redistribution layer including one or more metal layers disposed in one or more dielectric layers, adhering a second die over the redistribution layer, laminating a first dielectric material over the second die and the first redistribution layer, forming first vias through the first dielectric material to the second die and forming second vias through the first dielectric material to the first redistribution layer, and forming a second redistribution layer over the first dielectric material and over and coupled to the first vias and the second vias.
Method of forming integrated circuit packages with mechanical braces
In an embodiment, a device includes: a package component including integrated circuit dies, an encapsulant around the integrated circuit dies, a redistribution structure over the encapsulant and the integrated circuit dies, and sockets over the redistribution structure; a mechanical brace physically coupled to the sockets, the mechanical brace having openings, each one of the openings exposing a respective one of the sockets; a thermal module physically and thermally coupled to the encapsulant and the integrated circuit dies; and bolts extending through the thermal module, the mechanical brace, and the package component.
Semiconductor package with chamfered semiconductor device
A semiconductor package includes a semiconductor device, an encapsulating material, and a redistribution structure. The semiconductor device includes a chamfer disposed on one of a plurality of side surfaces of the semiconductor device. The encapsulating material encapsulates the semiconductor device. The redistribution structure is disposed over the encapsulating material and electrically connected to the semiconductor device.
Power electronics submodule for mounting on a cooling device
A power electronics submodule for mounting on a cooling device, has first and second surface sections next to one another, a substrate with a housing and includes a connection element, conductively connected by a contact to a track of the substrate and a connection section, arranged parallel to the substrate, the substrate arranged on the first surface section, the housing has a housing section, with a first main surface, arranged on the second surface section, and a second main surface, situated opposite the first main surface. In a non-mounted state a first main surface of the connection section is a first distance from the second main surface of the housing section in the housing region of a fastening device.
Power electronics submodule for mounting on a cooling device
A power electronics submodule for mounting on a cooling device, has first and second surface sections next to one another, a substrate with a housing and includes a connection element, conductively connected by a contact to a track of the substrate and a connection section, arranged parallel to the substrate, the substrate arranged on the first surface section, the housing has a housing section, with a first main surface, arranged on the second surface section, and a second main surface, situated opposite the first main surface. In a non-mounted state a first main surface of the connection section is a first distance from the second main surface of the housing section in the housing region of a fastening device.
Storage medium and semiconductor package
A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.
Storage medium and semiconductor package
A semiconductor package includes a semiconductor chip formed with a non-volatile semiconductor memory, a resin encapsulation that encapsulates the semiconductor chip, electrodes in a lattice (solder balls) formed and arrayed in a lattice on a bottom surface of the resin encapsulation. The solder balls include a signal electrode formed within the central region of the array and a dummy electrode formed outside the signal electrode.
Package and Manufacturing Method of the Same
A first frame includes portions of a first short side surface and a first long side surface, in which a plurality of conductor layers to which a plurality of DC electrode terminals are connected, and a plurality of insulating layers arranged between the plurality of conductor layers are stacked. Further, a second frame includes portions of a second short side surface and a second long side surface.
Package and Manufacturing Method of the Same
A first frame includes portions of a first short side surface and a first long side surface, in which a plurality of conductor layers to which a plurality of DC electrode terminals are connected, and a plurality of insulating layers arranged between the plurality of conductor layers are stacked. Further, a second frame includes portions of a second short side surface and a second long side surface.
ELECTRONIC DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME
An electronic device package is provided. The electronic device package includes a redistribution layer (RDL), a first electronic component and an interconnector. The RDL includes a topmost circuit layer, and the topmost circuit layer includes a conductive trace. The first electronic component is disposed over the RDL. The interconnector is disposed between the RDL and the first electronic component. A direction is defined by extending from a center of the first electronic component toward an edge of the first electronic component, and the direction penetrates a first sidewall and a second sidewall of the interconnector, the second sidewall is farther from the center of the first electronic component than the first sidewall is, and the conductive trace is outside a projection region of the second sidewall.