Provided is a semiconductor element capable of inspecting a plurality of wires formed in parallel. A semiconductor element according to an embodiment includes: a first circuit (45B) connected to a first position of each of a plurality of wires of a first wire group (31) including the plurality of wires; a second circuit (45A) connected to a second position corresponding to an end of each of the plurality of wires; and a plurality of connection units (43) that connects a third circuit (14) with each of the plurality of wires, the plurality of connection units (43) being provided on a one-to-one basis to the plurality of wires between the first position and the second position of each of the plurality of wires.

Integrated circuit (IC) assemblies with stacked compute logic and memory dies, and associated systems and methods, are disclosed. One example IC assembly includes a compute logic die and a stack of memory dies provided above and coupled to the compute logic die, where one or more of the memory dies closest to the compute logic die include memory cells with transistors that are thin-film transistors (TFTs), while one or more of the memory dies further away from the compute logic die include memory cells with non-TFT transistors. Another example IC assembly includes a similar stack of compute logic die and memory dies where one or more of the memory dies closest to the compute logic die include static random-access memory (SRAM) cells, while one or more of the memory dies further away from the compute logic die include memory cells of other memory types.

A method and an apparatus for the pressure-sintering connection of a first and a second connection provide a frame element lowerable onto a frame surface surrounding the supporting surface, having a sintering ram lowerable lowered from the normal direction onto the second connection partner and exerts pressure thereon, and converting a sintering paste between the connection partners into a sintered metal, and having an auxiliary apparatus for the arrangement of a separating film for the peripheral covering of the frame surface and the connection partners. This arrangement of the separating film produces an inner region bounded by the frame element and bounded by a separating film portion within the frame element and by the supporting surface, and injection opening and an outlet opening allow a second gas to flush through said inner region from the injection opening to the outlet opening and displace a first gas.

A bonding element and a method for manufacturing the same thereof are provide, wherein the method comprises the following steps: providing a carrier substrate; forming a first metal layer on the carrier substrate; forming a first insulating layer on the first metal layer, wherein the first insulating layer includes a first through hole; forming a first passivation layer and a first conductive layer in the first through hole, wherein the first passivation layer and the first conductive layer in the first through hole form a first connecting bump; forming a first substrate on the first connection bump and the first insulating layer; removing the carrier substrate and the first metal layer to form a first sub-bonding element; and connecting the first sub-bonding element and a second sub-bonding element with a surface of the first passivation of the first connection bump to form the bonding element.

A semiconductor structure, including a substrate and multiple chips, is provided. The chips are stacked on the substrate. Each of the chips has a first side and a second side opposite to each other. Each of the chips includes a transistor adjacent to the first side and a storage node adjacent to the second side. Two adjacent chips are bonded to each other. The transistor of one of the two adjacent chips is electrically connected to the storage node of the other one of the two adjacent chips to form a memory cell.

An integrated circuit package includes first and second dies bonded to each other. The first die includes first die pads over a first device, first bonding pads over the first die pads, a first conductive via disposed between and electrically connected to a first one of the first die pads and a first one of the first bonding pads, and a first thermal via disposed between a second one of the first die pads and a second one of the first bonding pads and electrically insulated from the second one of the first die pads or the second one of the first bonding pads. The second die includes second bonding pads. The first one of the first bonding pads is connected to a first one of the second bonding pads. The second one of the first bonding pads is connected to a second one of the second bonding pads.

A semiconductor structure is provided, and includes a substrate and a plurality of devices disposed over the substrate. The semiconductor structure includes an interconnect structure disposed over the substrate and electronically connected to the devices. The semiconductor structure also includes a bonding film formed over the interconnect structure. The semiconductor structure further includes a protective layer formed on sidewalls of the substrate, the interconnect structure and the bonding film. In addition, the semiconductor structure includes a dielectric material formed on a sidewall of the protective layer and overlapping with the protective layer in a top view.

A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.

A die bonding method includes obtaining information about a quality grade of each die of a plurality of dies placed at a wafer, picking up a first die among the plurality of dies from the wafer, identifying a bonding location of a plurality of bonding locations from a substrate according to a quality grade of the first die, and bonding the first die to the bonding location of the substrate.

A pick and place method and apparatus thereof are provided. The pick and place method includes: providing at least one semiconductor element disposed on a source storage location; picking up the at least one semiconductor element from the source storage location; transferring the at least one semiconductor element to a temporary storage device according to a signal; positioning the at least one semiconductor element through the temporary storage device; and picking up the positioned semiconductor element from the temporary storage device and placing the positioned semiconductor element on a destination storage location.