A power device includes a semiconductor substrate having first and second current carrying terminals on respective first and second opposing surfaces thereof. A silicided polysilicon temperature sensor and silicided polysilicon gate electrode are provided on the first surface. A source region of first conductivity type and a shielding region of second conductivity type are provided in the semiconductor substrate. The shielding region forms a P-N rectifying junction with the source region, and extends between the silicided polysilicon temperature sensor and the second current carrying terminal. A field oxide insulating region is provided, which extends between the shielding region and the silicided polysilicon temperature sensor.

A configurable capacitance device includes a semiconductor substrate including a plurality of integrally formed capacitors; and a separate interconnect structure coupled to the semiconductor substrate, wherein the separate interconnect structure is configurable to electrically couple two or more of the plurality of integrally formed capacitors together in a parallel configuration.

A semiconductor component for a memory device is provided. The semiconductor component comprises a first active region extending in a first direction; a second active region extending in the first direction; a first conductive layer disposed across the first active region and the second active region, in a second direction substantially perpendicular to the first direction; a second conductive layer extending in the first direction; and a first conductive via connecting the first conductive layer and the second conductive layer.

A design method of a dummy pattern layout including the following steps is provided. An integrated circuit layout design including resistor elements is obtained via a computer. The locations of dummy conductive structures are configured, wherein the dummy conductive structures are aligned with the resistor elements. The locations of dummy support patterns are configured, wherein each of the dummy support patterns is configured between two adjacent dummy conductive structures, and each of the dummy conductive structures is equidistant from the dummy support patterns on both sides.

An integrated circuit includes a substrate layer and a resistor bank in a polysilicon layer disposed on the substrate layer. The resistor bank includes a plurality of resistor elements having a body portion extending in a longitudinal direction. A metal line is disposed in a metal layer above the polysilicon layer to extend transverse to the longitudinal direction and across the body portion of a group of the plurality of resistor elements, thereby forming a first region of the resistor bank and a second region of the resistor bank. The first region is separated from the second region by the metal line. A resistor device having a predetermined resistance includes a subset of the resistor elements in the group electrically coupled together in the second region. The resistor device also includes first and second terminals located in the same first or second region of the resistor bank.

A semiconductor device includes a substrate, a first isolation structure, a second isolation structure and a dummy pattern. The substrate includes a first part surrounding a second part at a top view. The first isolation structure is disposed between the first part and the second part, to isolate the first part from the second part. The second isolation structure is disposed at at least one corner of the first part. The dummy pattern is disposed on the second isolation structure. The present invention also provides a method of forming said semiconductor device.

A semiconductor device includes a first terminal, a second terminal positioned away from the first terminal, a first resistive segment coupled between the first terminal and the second terminal, a third terminal positioned away from the first terminal and the second terminal, a second resistive segment coupled between the second terminal and third terminal, a first floating plate disposed physically proximate the first resistive segment and including a first end coupled to one of the first terminal and the second terminal, and a second floating plate disposed physically proximate the second resistive segment and including a first end coupled to one of the second terminal and the third terminal.

A method of fabricating integrated passive device dies includes forming a first plurality of integrated passive devices on a substrate, forming a plurality of micro-bumps on the first plurality of integrated passive devices such that the plurality of micro-bumps act as electrical connections to the integrated passive devices, and dicing the substrate to form an integrated passive device die including a second plurality of integrated passive devices. The micro-bumps may be formed in an array or staggered configuration and may have a pitch that is in a range from 20 microns to 100 microns. The integrated passive devices may each include a seal ring and the integrated passive device die may have an area that is a multiple of an integrated passive device area. The method may further include dicing the substrate in various ways to generate integrated passive device dies having different sizes and numbers of integrated passive devices.

An integrated radar circuit comprising: a first substrate, of a first semiconductor material, said first substrate comprising an integrated transmit and receive radar circuit; a second substrate, of a second semiconductor material, said second substrate comprising at least on through-substrate cavity having cavity walls; at least one discrete transistor chip, of a third semiconductor material, said at least one discrete transistor chip having chip walls and being held in said at least one through-substrate cavity by a metal filling extending from at least one cavity wall to at least one chip wall; a conductor on said second substrate, electrically connecting a portion of said integrated transmit and receive radar circuit to a discrete transistor on said at least one discrete transistor chip.

A method is provided for producing a semiconductor structure including at least one capacitor. The method includes: forming a first metal layer; forming a second metal layer; forming a third high resistance (HiR) layer interposed between the first metal layer and the second metal layer, wherein at least one of the first metal layer and the sconed metal layer at least partially overlap with the third HiR layer; and defining at least one of a first capacitor between the first metal layer and the third HiR layer and a second capacitor between the second metal layer and the third HiR layer. Suitably, the method is carried out subsequent to a front-end-of-line (FEOL) portion of a semiconductor fabrication process.