Method of dummy pattern layout

Abstract

A design method of a dummy pattern layout including the following steps is provided. An integrated circuit layout design including resistor elements is obtained via a computer. The locations of dummy conductive structures are configured, wherein the dummy conductive structures are aligned with the resistor elements. The locations of dummy support patterns are configured, wherein each of the dummy support patterns is configured between two adjacent dummy conductive structures, and each of the dummy conductive structures is equidistant from the dummy support patterns on both sides.

Claims

1. A design method of a dummy pattern layout, comprising: obtaining an integrated circuit layout design comprising resistor elements via a computer; configuring locations of dummy conductive structures, wherein the dummy conductive structures are aligned with the resistor elements, and a width of each of the resistor elements is equal to a width of each of the dummy conductive structures; and configuring locations of dummy support patterns, wherein each of the dummy support patterns is configured between two adjacent dummy conductive structures, and each of the dummy conductive structures is equidistant from the dummy support patterns on both sides.

2. The design method of the dummy pattern layout of claim 1, wherein a method of configuring the locations of the dummy support patterns comprises: selecting empty areas between the dummy conductive structures, wherein the empty areas are areas to be inserted by the dummy support patterns; inserting the dummy support patterns into the empty areas; configuring a distance between the dummy support patterns and the dummy conductive structures; and configuring a distance between ends of the dummy support patterns.

3. The design method of the dummy pattern layout of claim 1, wherein a width of each of the dummy support patterns is less than a distance between two adjacent dummy conductive structures.

4. The design method of the dummy pattern layout of claim 1, wherein each of the dummy support patterns is located at a central location between two adjacent dummy conductive structures.

5. The design method of the dummy pattern layout of claim 1, wherein the dummy support patterns are a portion of the substrate.

6. The design method of the dummy pattern layout of claim 1, wherein the dummy conductive structures comprise dummy metal gate structures or dummy contacts.

7. The design method of the dummy pattern layout of claim 1, wherein the resistor elements comprise high-resistance resistors.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

(1) The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and, together with the description, serve to explain the principles of the invention.

(2) FIG. 1 is a cross section of a semiconductor structure of an embodiment of the invention.

(3) FIG. 2 is a design flowchart of a dummy pattern layout of an embodiment of the invention.

(4) FIG. 3A to FIG. 3C are top views of a design flowchart of a dummy pattern layout of an embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

(5) FIG. 1 is a cross section of a semiconductor structure of an embodiment of the invention.

(6) Referring to FIG. 1, a semiconductor structure 100 includes a substrate 102, dummy conductive structures 104, and resistor elements 106. The substrate 102 can be a semiconductor substrate such as a silicon substrate. The substrate 102 includes a resistor region R1, and can further include a dense region R2. The dense region R2 can be located at one side or two sides of the resistor region R1. The resistor region R1 is, for instance, a low pattern density region, and the dense region R2 is, for instance, a high pattern density region. In the present embodiment, the dense region R2 is exemplified by being located at one side of the resistor region R1, but the invention is not limited thereto.

(7) The substrate 102 has isolation structures 108 and dummy support patterns 110 located in the resistor region R1. Each of the isolation structures 108 is located between two adjacent dummy support patterns 110. A width W1 of the top portion of the isolation structures 108 in the resistor region R1 is, for instance, greater than a width W2 of the dummy conductive structures 104. The isolation structures 108 are, for instance, shallow trench isolation (STI) structures. The material of the isolation structures 108 is, for instance, silicon oxide.

(8) In addition to being disposed in the substrate 102 in the resistor region R1, the isolation structures 108 can further be disposed in the substrate 102 in the dense region R2. In the present embodiment, the width W1 of the top portion of the isolation structures 108 in the resistor region R1 is, for instance, greater than a width W3 of the top portion of the isolation structures 108 in the dense region R2, but the invention is not limited thereto.

(9) The dummy support patterns 110 can be a portion of the substrate 102. For instance, the dummy support patterns 110 can be protruding structures formed by removing a portion of the substrate 102. During a chemical mechanical polishing process for forming the isolation structures 108, the dummy support patterns 110 can display a support function to prevent dishing phenomenon to the isolation structures 108 in the resistor region R1.

(10) Moreover, a width W4 of the top portion of the dummy support patterns 110 is, for instance, less than a distance D1 between two adjacent dummy conductive structures 104. The dummy support pattern 110 is, for instance, located at the central location between two adjacent dummy conductive structures 104.

(11) Each of the dummy conductive structures 104 is disposed on each of the isolation structures 108 and equidistant from the dummy support patterns 110 at both sides. That is, the dummy conductive structures 104 can be a same distance D2 from the dummy support patterns 110 on both sides. Each of the dummy conductive structures 104 is, for instance, located at the central location of each of the isolation structures 108. The dummy conductive structures 104 are, for instance, dummy metal gate structures or dummy contacts.

(12) In the present embodiment, the dummy conductive structures 104 are exemplified by dummy metal gate structures, but the invention is not limited thereto. The dummy conductive structures 104 can include a gate dielectric layer 112, a high-k dielectric layer 114, a work function metal layer 116, and a metal gate layer 118 disposed on the isolation structures 108 in order. Moreover, spacers (not shown) can further optionally be disposed on both sides of the metal gate layer 118. The material of the gate dielectric layer 112 is, for instance, silicon oxide. The material of the high-k dielectric layer 114 is, for instance, hafnium oxide (HfO.sub.2), aluminum oxide (Al.sub.2O.sub.3), yttrium oxide (Y.sub.2O.sub.3), zirconium silicon oxide (ZrSi.sub.xO.sub.y), hafnium silicon oxide (HfSi.sub.xO.sub.y), hafnium silicon oxynitride (HfSi.sub.xO.sub.yN.sub.z), lanthanum sesquioxide (La.sub.2O.sub.3), zirconium dioxide (ZrO.sub.2), tantalum pentoxide (Ta.sub.2O.sub.5), praseodymium oxide (Pr.sub.2O.sub.3), or titanium dioxide (TiO.sub.2). The material of the work function metal layer 116 is, for instance, TiN, TaC, TaCNO, TaCN, TiAl, TaN, or a combination thereof. The material of the metal gate layer 118 is, for instance, tungsten.

(13) The resistor elements 106 are disposed above the dummy conductive structures 104 and aligned with the dummy conductive structures 104. The resistor elements 106 are, for instance, high-resistance resistors (HIRs), and the material of the resistor elements 106 at this point is, for instance, titanium nitride (TiN). A width W5 of the resistor elements 106 can be greater than or equal to the width W2 of the dummy conductive structures 104. In the present embodiment, the width W5 of the resistor elements 106 is exemplified by being roughly equal to the width W2 of the dummy conductive structures 104.

(14) Moreover, the semiconductor structure 100 can further include at least one of at least one active area AA, at least one conductive structure 120, a doped region 122, a doped region 124, a contact 126, a contact 128, a contact 130, and a dielectric layer 132. The active area AA is located between two adjacent isolation structures 108 in the dense region R2.

(15) The conductive structure 120 is disposed on the substrate 102 between two adjacent isolation structures 108 in the dense region R2. The conductive structure 120 is, for instance, a metal gate structure. Moreover, the conductive structure 120 can have the same structure as the dummy conductive structures 104 which is therefore not repeated herein.

(16) The doped region 122 and the doped region 124 are disposed in the substrate 102 on both sides of the conductive structure 120. The doped region 122 and the doped region 124 can be respectively used as a source or a drain. In the present embodiment, the conductive structure 120, the doped region 122, and the doped region 124 can form a transistor.

(17) The contact 126, the contact 128, and the contact 130 are respectively electrically connected to the conductive structure 120, the doped region 122, and the doped region 124. The material of the contact 126, the contact 128, and the contact 130 is, for instance, tungsten.

(18) Moreover, the dummy conductive structures 104, the resistor elements 106, the conductive structure 120, the contact 126, the contact 128, and the contact 130 can be disposed in the dielectric layer 132. The dielectric layer 132 can be a multi-layer structure. The material of the dielectric layer 132 is, for instance, silicon oxide.

(19) It can be known from the above embodiments that, in the semiconductor structure 100, since each of the isolation structures 108 is located between two adjacent dummy support patterns 110 and each of the dummy conductive structures 104 is disposed on each of the isolation structures 108 and equidistant from the dummy support patterns 110 on both sides, dishing phenomenon to the isolation structures 108 in the resistor region R1 can be prevented to prevent undesired conductive material from remaining in the resistor region R1. Therefore, bridging to the dummy conductive structures 104 in the resistor region R1 and the conductive structure 120 in the dense region R2 can be prevented to improve the electrical performance of the device.

(20) FIG. 2 is a design flowchart of a dummy pattern layout of an embodiment of the invention. FIG. 3A to FIG. 3C are top views of a design flowchart of a dummy pattern layout of an embodiment of the invention.

(21) In the following, the design method of the dummy pattern layout (such as the dummy conductive structures 104 and the dummy support patterns 110) in the semiconductor structure 100 is described via FIG. 2 and FIG. 3A to FIG. 3C. Moreover, the same components in FIG. 2, FIG. 3A to FIG. 3C, and FIG. 1 adopt the same reference numerals and are not repeated herein.

(22) Referring to all of FIG. 2 and FIG. 3A to FIG. 3C, step S100 is performed to obtain an integrated circuit layout design 200 including resistor elements 106 via a computer (FIG. 3A). Step S102 is performed to configure the locations of dummy conductive structures 104, wherein the dummy conductive structures 104 are aligned with the resistor elements 106 (FIG. 3A). Step S104 is performed to configure the locations of dummy support patterns 110, wherein each of the dummy support patterns 110 is configured between two adjacent dummy conductive structures 104, and each of the dummy conductive structures 104 is equidistant from the dummy support patterns 110 on both sides (FIG. 3B and FIG. 3C). That is, the dummy conductive structures 104 can be a same distance D2 from the dummy support patterns 110 on both sides. Moreover, a width W4 of the dummy support patterns 110 is, for instance, less than a distance D1 between two adjacent dummy conductive structures 104. Each of the dummy support patterns 110 is, for instance, located at the central location between two adjacent dummy conductive structures 104.

(23) In the following, the method of configuring the locations of the dummy support patterns 110 (step S104) are described via FIG. 2A to FIG. 2C. In the present embodiment, step S104 can include step S106, step S108, step S110, and step S112.

(24) Referring to both of FIG. 2 and FIG. 3A, step S106 is performed to select empty areas R3 between the dummy conductive structures 104, wherein the empty areas R3 are areas to be inserted by the dummy support patterns 110. Step S108 is performed to insert the dummy support patterns 110 into the empty areas R3.

(25) Referring to both of FIG. 2 and FIG. 3B, step S110 is performed to configure a distance D2 between the dummy support patterns 110 and the dummy conductive structures 104. The distance D2 can be designed by the design rule of the semiconductor process. The distance D2 is, for instance, 20 nm to 50 nm. In an embodiment, the distance D2 can be about 30 nm.

(26) Referring to both FIG. 2 and FIG. 3C, step S112 is performed to configure a distance D3 between the ends of the dummy support patterns 110. The distance D3 can be designed by the design rule of the semiconductor process. The distance D3 is, for instance, 100 nm to 200 nm. In an embodiment, the distance D3 can be about 150 nm.

(27) It can be known from the above embodiments that, in the design method of the dummy pattern layout 200, by configuring each of the dummy support patterns 110 between two adjacent dummy conductive structures 104, each of the isolation structures 108 can be located between two adjacent dummy support patterns 110. Moreover, each of the dummy conductive structures 104 is configured to be equidistant from the dummy support patterns 110 on both sides. Accordingly, dishing phenomenon to the isolation structures 108 in the resistor region R1 can be prevented to prevent undesired conductive material from remaining in the resistor region R1.

(28) Based on the above, via the semiconductor structure and the design method of the dummy pattern layout of the embodiments, undesired conductive material can be prevented from remaining in the resistor region (low pattern density region) to prevent bridging to the dummy conductive structures in the resistor region and the conductive structures in the dense region such that the electrical performance of the device can be improved.

(29) Although the invention has been described with reference to the above embodiments, it will be apparent to one of ordinary skill in the art that modifications to the described embodiments may be made without departing from the spirit of the invention. Accordingly, the scope of the invention is defined by the attached claims not by the above detailed descriptions.