Thin-film integrated spectrally-selective plasmonic absorber/emitter (ISSAE) that is simultaneously (i) an efficient sunlight absorber; (ii) an efficient heat insulator that enables modest sunlight concentration to produce a high temperature by reducing infrared emission by a hot surface; (iii) a spectrally-selective infrared emitter that supplies infrared photons of the right energy to a targeted photovoltaic cell, thereby matching its bandgap. Additionally, said ISSAE is sufficiently thin to enable its use as a wrapping/cloaking material for use with hot storage pipes containing heat exchange fluid. Said ISSAE is incorporated into a number of solar-conversion apparatus, taking advantage of the unique properties of said ISSAE.

A two-terminal photon-effect transistor (PET) is described that simplifies the photo sensing pixel by combing photodiode and field effect transistor dual functions into one simple but effective unit. Photons excite electrons from the valance band of semiconducting material as the electrode-free gate to modulate resistivity between source and drain, which directly results in current amplification of photo signal without traditional photo-electrical conversion and electrical amplification dual processes. PET possesses significance in both structural simplification and functional enhancement. As an implementing example of PET, a nanowire camera (NC) with large sensing area and extremely high resolution is fabricated by integrating millions of vertically aligned nanowire arrays in-between of orthogonal top and bottom nano-stripe electrodes. Each nanowire works as independent three-dimensional (3D) PET pixel, enabling the NC an ultra-high resolution and much simplified architecture. NC has pixel size of 50 nm which is two orders higher than existing CCD and CMOS image sensors.

A two-terminal photon-effect transistor (PET) is described that simplifies the photo sensing pixel by combing photodiode and field effect transistor dual functions into one simple but effective unit. Photons excite electrons from the valance band of semiconducting material as the electrode-free gate to modulate resistivity between source and drain, which directly results in current amplification of photo signal without traditional photo-electrical conversion and electrical amplification dual processes. PET possesses significance in both structural simplification and functional enhancement. As an implementing example of PET, a nanowire camera (NC) with large sensing area and extremely high resolution is fabricated by integrating millions of vertically aligned nanowire arrays in-between of orthogonal top and bottom nano-stripe electrodes. Each nanowire works as independent three-dimensional (3D) PET pixel, enabling the NC an ultra-high resolution and much simplified architecture. NC has pixel size of 50 nm which is two orders higher than existing CCD and CMOS image sensors.

The present invention provides a zinc nitride compound suitable for electronic devices such as high-speed transistors, high-efficiency visible light-emitting devices, high-efficiency solar cells, and high-sensitivity visible light sensors. The zinc nitride compound is represented, for example, by the chemical formula CaZn.sub.2N.sub.2 or the chemical formula X.sup.1.sub.2ZnN.sub.2 wherein X.sup.1 is Be or Mg. The zinc nitride compound is preferably synthesized at a high pressure of 1 GPa or more.

A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

A semiconductor body of a first type of conductivity is formed including a base layer, a first further layer on the base layer and a second further layer on the first further layer. The base layer and the second further layer have an intrinsic doping or a doping concentration that is lower than the doping concentration of the first further layer. A doped region of an opposite second type of conductivity is arranged in the semiconductor body, penetrates the first further layer and extends into the base layer and into the second further layer. Anode and cathode terminals are electrically connected to the first further layer and the doped region, respectively. The doped region can be produced by filling a trench with doped polysilicon.

The radiation detector includes: a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into light; protective film that covers at least the conversion layer; a reinforcing member provided on a second surface opposite to the first surface of the substrate; and a supporting member that supports the reinforcing member with the reinforcing member sandwiched between the supporting member and the second surface of the substrate.

The radiation detector includes: a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into light; protective film that covers at least the conversion layer; a reinforcing member provided on a second surface opposite to the first surface of the substrate; and a supporting member that supports the reinforcing member with the reinforcing member sandwiched between the supporting member and the second surface of the substrate.

The radiation detector includes a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into the light; a first protective film that is provided on the first surface side of the substrate with an end part also provided on the first surface side of the substrate and covers at least the entire conversion layer; and a second protective film that covers at least a second surface opposite to the first surface.

The radiation detector includes a sensor board including a flexible substrate and a layer which is provided on a first surface of the substrate and in which a plurality of pixels, which accumulate electrical charges generated in accordance with light converted from radiation, are formed; a conversion layer that is provided on a side, opposite to the substrate, of the layer in which the pixels are formed, and converts radiation into the light; a first protective film that is provided on the first surface side of the substrate with an end part also provided on the first surface side of the substrate and covers at least the entire conversion layer; and a second protective film that covers at least a second surface opposite to the first surface.