In a described example, an apparatus includes: a photon detector array with a first signal output pad coupled to a photon detector array pixel; a die carrier comprising a readout integrated circuit (ROIC) die and a conductor layer having conductors that couple a first signal input pad on the conductor layer to an input signal lead of the ROIC die; and the first signal output pad coupled to the first signal input pad.

A radiation detector includes a first detecting part including a first organic detection layer and a first layer, and a second detecting part including a second organic detection layer. The first layer includes a first material and a first thickness. The second detecting part does not include the first layer. The second detecting part does not include a second layer, or the second detecting part includes the second layer that includes at least one of a second material or a second thickness. The second material is different from the first material. The second thickness is different from the first thickness. The first material includes at least one of a first organic material or a first element. The second material includes at least one of a second organic material or a second element.

A bolometer. In one embodiment a graphene sheet is configured to absorb electromagnetic waves. The graphene sheet has two contacts connected to an amplifier, and a power detector connected to the amplifier. Electromagnetic power in the evanescent electromagnetic waves is absorbed in the graphene sheet, heating the graphene sheet. The power of Johnson noise generated at the contacts is proportional to the temperature of the graphene sheet. The Johnson noise is amplified and the power in the Johnson noise is used as a measure of the temperature of the graphene sheet, and of the amount of electromagnetic wave power absorbed by the graphene sheet.

The invention relates to an X-ray detector device (10) for detection of X-ray radiation at an inclined angle relative to the X-ray radiation, an X-ray imaging system (1), an X-ray imaging method, and a computer program element for controlling such device or system for performing such method and a computer readable medium having stored such computer program element. The X-ray detector device (10) comprises a cathode surface (11) and an anode surface (12). The cathode surface (11) and the anode surface (12) are displaced by a separation layer (13) allowing charge transport (T) between the cathode surface (11) and the anode surface (12) in response to X-ray radiation incident during operation on the cathode surface (11). The anode surface (12) is segmented into anode pixels (121) and the cathode surface (11) is segmented into cathode pixels (111). At least one of the cathode pixels (111) is assigned to at least one of the anode pixels (121) in a coupling direction (C) inclined relative to the cathode surface (11). At least one of the cathode pixels (111) is configured to be at a voltage offset relative to an adjacent cathode pixel and at least one of the anode pixels (121) is configured to be at a voltage offset relative to an adjacent anode pixel (121). The voltage offset is configured to converge the charge transport (T) in a direction parallel to the coupling direction (C).

Quantum dragon materials and devices have unit (total) transmission of electrons for a wide range of electron energies, even though the electrons do not undergo ballistic propagation, when connected optimally to at least two external leads. Quantum dragon materials and devices enable embodiments as quantum dragon electronic or optoelectronic devices, including field effect transistors (FETs), sensors, injectors for spin-polarized currents, wires having integral multiples of the conductance quantum, and wires with zero electrical resistance. Methods of devising such quantum dragon materials and devices are also disclosed.

A detector for detecting radiation is generally described. The detector can comprise at least one ionic semiconductor material. For example, the ionic semiconductor material comprises a thallium halide and/or an indium halide. Electrical contacts are formed on the semiconductor material to provide a voltage to the detector during use. At least one of the electrical contacts may comprise a liquid that contains ions. In some instances, at least one electrical contact comprises a metal, such as Cr, Ti, W, Mo, or Pb. In some embodiments, the detector comprises both an electrical contact comprising liquid comprising ions and an electrical contact comprising a metal selected from a group consisting of Cr, Ti, W, Mo, and Pb. Detectors for detecting radiation, as described herein, may have beneficial properties.

A photoelectric conversion element is realized in which the movement direction of electrons in the element changes according to the wavelength of light to be converted. A photoelectric conversion unit includes an active layer on which light to be converted is incident, an intermediate layer that is arranged on the active layer on a side opposite to the side on which the light to be converted is incident, and a reflection layer that is arranged so as to oppose the active layer with the intermediate layer interposed therebetween. The active layer includes a plasmonic material, which is a material in which plasmon resonance occurs due to a reciprocal action with the light to be converted. The intermediate layer has both a semiconductor property and transparency with respect to the light to be converted. The reflection layer has reflectivity with respect to the light to be converted.

Radiation detectors are disclosed. The radiation detectors comprise a substrate and at least one radiation sensitive region on the substrate, the at least one radiation sensitive region comprising an array of elongate nanostructures projecting from the substrate. Methods of manufacture of such radiation detectors are also disclosed.

Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.

Example embodiments relate to optoelectronic devices. An optoelectronic device may include a photoactive layer between first and second electrodes, and a ferroelectric layer corresponding to at least one of the first and second electrodes. At least one of the first and second electrodes may include graphene. The photoactive layer may include a two-dimensional (2D) semiconductor. The optoelectronic device may further include a third electrode, and in this case, the ferroelectric layer may be between the second electrode and the third electrode. The second electrode, the ferroelectric layer, and the third electrode may constitute a nanogenerator.