A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

Methods of manufacturing heterojunction bipolar transistors are described herein. An exemplary method can include providing an emitter/base stack comprising a substrate, a base over the substrate, and/or an emitter over the base. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

A quantum device includes a substrate including a first material and including an upper surface thereof, a first layer comprising a compound of the first material disposed on the upper surface of the substrate, a second layer, comprising a metal oxide, disposed on the first layer, a third layer, comprising a noble metal, disposed on the second layer, a fourth layer, comprising a metal oxide, disposed on the third layer, a fifth layer, comprising a piezoelectric material, disposed on the fourth layer, a sixth layer, comprising a noble metal, disposed on the fifth layer, a seventh layer, comprising a material capable of quantum emission, disposed on the sixth layer, and an eighth layer, comprising a noble metal, disposed on the seventh layer, and at least one of the eighth layer and the seventh layer are sized to enable quantum emission from the seventh layer.

A display panel, a light-emitting device, and a driving method thereof are provided. The light-emitting device includes a substrate, and a first electrode, a first light-emitting unit, a connecting layer, a second light-emitting unit, and a second electrode stacked up sequentially on the substrate. Polarities of the first electrode and the second electrode are opposite and reverse periodically in order that the first light-emitting unit and the second light-emitting unit illuminate alternately.

A phosphor is represented by a chemical formula of Lu.sub.(3-x-z)Mg.sub.xZn.sub.yAl.sub.(5-y)O.sub.12:Ce.sub.z, in which in a case where z is in a range of 0.01≤z≤0.03, x and y respectively satisfy 0<x≤1.4 and 0<y≤1.4, in a case where z is in a range of 0.03<z≤0.06, x and y respectively satisfy y<0.2 and 0.1≤x≤1.4, x<0.2 and 0.1≤y≤1.4, or x=0.2 and y=0.2, in a case where z is in a range of 0.06<z≤0.09, x and y respectively satisfy y<0.2 and 0.1≤x<1.4, or x<0.2 and 0.1≤y<1.4, and in a case where z is in a range of 0.09<z≤0.12, x and y respectively satisfy y<0.2 and 0.1≤x<0.9, or x<0.2 and 0.1≤y<0.9.

Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

The invention provides a silicon pn based device with different dopant and impurity implanted concentrations strategically placed in the device, the pn junction being reverse biased, such that the 650 nm optical emission is stimulated and enhanced. The invention extends to a silicon avalanche light emitting device comprising a first junction and a second junction, said first junction including a reverse biased excitation zone for injecting high energy carriers in a first direction and said second junction being forward biased so as to inject high density low energy carriers opposite to said first direction, wherein an interaction zone is formed between said first junction and said second junction so as to enhance emission of 650 nm photons through interactions between said high energy carriers and said low energy carriers.

The present invention is applicable to a display device-related technical field, and relates to, for example, a flat lighting device and a display device using a light-emitting diode (LED). The present invention relates to a display device including a plurality of individual unit compartment regions, comprising: at least one light-emitting diode provided in the individual unit compartment regions; a gate-on voltage line connected to the light-emitting diode; a scan line for applying a common voltage to the plurality of individual unit compartment regions; a data line for applying individual switching voltages to the plurality of individual unit compartment regions; a driving unit including a driving MOSFET device connected to the light-emitting diode; and a switching unit including a switching MOSFET device connected to the scan line and the data line to perform a switching operation.

The present disclosure provides an ultra-high color rendering white light-emitting device including a semiconductor LED chip that emits a violet wavelength range of light with an emission peak at 380 nm to 430 nm, and a phosphor layer distributed in a transparent resin layer that emits light when excited by an excitation wavelength of the violet LED chip, wherein the phosphor layer includes a first phosphor having an emission peak at 450-470 nm, a second phosphor having an emission peak at 510-550 nm, a third phosphor having an emission peak at 550-590 nm, a fourth phosphor having an emission peak at 630-660 nm, and a fifth phosphor having an emission peak at 660-730 nm, and the ultra-high color rendering white light-emitting device has Ra that is equal to or higher than 98 and less than 100.

A red phosphor is expressed by a chemical formula of Ca.sub.zO:Ce.sub.x, Li.sub.y, in which a range of x values is 0<x<0.2, a range of y values is 0≤y<0.2, and a range of z values is 1−x−y≤z≤1−x.