The present disclosure provides a light-emitting device including a substrate, a first block of semiconductor stack on the substrate, a second block of semiconductor stack on the substrate and a third block of semiconductor stack on the substrate. The first block of semiconductor stack includes a first emitting wavelength and a first surface away from the substrate. The second block of semiconductor stack on the substrate includes a second emitting wavelength and a second surface away from the substrate. The third block of semiconductor stack includes s a third emitting wavelength and a third surface away from the substrate. The second surface and the first surface are non-coplanar and the third surface and the first surface are coplanar. The first emitting wavelength, the second emitting wavelength and the third emitting wavelength are different.

A light source module includes a light source for emitting light, and a heat sink for absorbing heat from the light source and dissipating the heat to the outside. The heat sink includes a mounting part for attaching the light source, and a heat dissipation fin for absorbing heat generated by the light source and dissipating the heat to the outside. An electrical insulating layer is provided on at least one surface of the heat sink, and an electrically conductive layer is provided in the insulating layer. The electrically conductive layer provides a path through which electric current is applied to the light source. A lens cover is provided over the light source.

A light source module includes a light source for emitting light, and a heat sink for absorbing heat from the light source and dissipating the heat to the outside. The heat sink includes a mounting part for attaching the light source, and a heat dissipation fin for absorbing heat generated by the light source and dissipating the heat to the outside. An electrical insulating layer is provided on at least one surface of the heat sink, and an electrically conductive layer is provided in the insulating layer. The electrically conductive layer provides a path through which electric current is applied to the light source. A lens cover is provided over the light source.

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.

A method for manufacturing a light emitting diode can include forming a GaN-based semiconductor structure with a thickness of less than 5 microns on a substrate, the GaN-based semiconductor structure having a p-type GaN-based semiconductor layer; an active layer on the p-type GaN-based semiconductor layer; and an n-type GaN-based semiconductor layer on the active layer; forming a p-type electrode having multiple metal layers on the GaN-based semiconductor structure; forming a metal support layer on the p-type electrode; removing the substrate from the GaN-based semiconductor structure to expose an upper surface of the GaN-based semiconductor structure; forming an n-type electrode on a flat portion produced by polishing the exposed upper surface of the GaN-based semiconductor structure, not only with overlapping at least a portion of the p-type electrode in a thickness direction of the GaN-based semiconductor structure but also with contacting the flat portion; and forming an insulating layer on the upper surface of the GaN-based semiconductor structure and on an entire side surface of the GaN-based semiconductor structure, in which a first part formed on the upper surface of the GaN-based semiconductor structure in the insulating layer contacts the upper surface of the GaN-based semiconductor structure and a side surface of the n-type electrode, and a second part formed on the entire side surface of the GaN-based semiconductor structure in the insulating layer does not contact the n-type electrode.

A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section.

A display device includes: a substrate; a plurality of light-emission elements arranged, on the substrate, in a first direction and a second direction intersecting each other, each of the light-emission elements having a first electrode layer, an organic layer including a luminous layer, and a second electrode layer which are laminated in that order; and a separation section disposed, on the substrate, between the light-emission elements adjacent to each other in the first direction, the separation section having two or more pairs of steps. The first electrode layers in the light-emission elements are separated from each other, and the organic layers as well as the second electrode layers in the light-emission elements adjacent to each other in the first direction are separated from each other by the steps included in the separation section.

An ultraviolet light-emitting element includes a support substrate, a group III-V nitride semiconductor layer structure mounted on a mounting surface of the support substrate and including an n-type semiconductor layer, a light-emitting layer, a p-type cladding layer and a p-type contact layer stacked in this order on the support substrate, and an n-type electrode and a p-type electrode mounted on the n-type semiconductor and p-type contact layer, respectively. The support substrate has an indented portion formed on at least a part of a light emitting surface of the support substrate opposite to a mounting surface of the n-type semiconductor layer. An area of the n-type semiconductor layer surface exposed to the outside is at least 20% and at most 90% in largeness. Areas of the p-type contact layer surface and p-type electrode surface exposed to the outside are at least 5% and at most 50% in largeness.

An ultraviolet light-emitting element includes a support substrate, a group III-V nitride semiconductor layer structure mounted on a mounting surface of the support substrate and including an n-type semiconductor layer, a light-emitting layer, a p-type cladding layer and a p-type contact layer stacked in this order on the support substrate, and an n-type electrode and a p-type electrode mounted on the n-type semiconductor and p-type contact layer, respectively. The support substrate has an indented portion formed on at least a part of a light emitting surface of the support substrate opposite to a mounting surface of the n-type semiconductor layer. An area of the n-type semiconductor layer surface exposed to the outside is at least 20% and at most 90% in largeness. Areas of the p-type contact layer surface and p-type electrode surface exposed to the outside are at least 5% and at most 50% in largeness.

The present disclosure provides a display module and a method for manufacturing the same, a display device and a wearable device. The display module includes a display screen, at least one pressure sensing electrode, and a touch screen. The display screen includes a first and a second electrode on opposite sides of a display layer, and an encapsulation layer on the second electrode. The at least one pressure sensing electrode is disposed on the encapsulation layer and opposite to the second electrode. The touch screen is disposed on the at least one pressure sensing electrode and is insulated from the at least one pressure sensing electrode.