Described is an arrangement and system for precise angular and directional positioning of light-emitting diodes (LED). An LED component includes a base body with a light-emitting region, a first connector, and a second connector, where the connectors are electrically conductively connected to the light-emitting region. The base body includes at least two fixing regions and the connectors each include a bending portion and a contact area for surface mounting. Each of the bending portions is arranged between the base body and the contact area. A supporting frame includes a plinth region to align the supporting frame on a surface and includes an outwardly open recess, a support region to receive a component in the supporting frame and at least two fixing elements to fix the component above the support region. A base area of the plinth region and a base area of the support region enclose an acute angle.

Described is an arrangement and system for precise angular and directional positioning of light-emitting diodes (LED). An LED component includes a base body with a light-emitting region, a first connector, and a second connector, where the connectors are electrically conductively connected to the light-emitting region. The base body includes at least two fixing regions and the connectors each include a bending portion and a contact area for surface mounting. Each of the bending portions is arranged between the base body and the contact area. A supporting frame includes a plinth region to align the supporting frame on a surface and includes an outwardly open recess, a support region to receive a component in the supporting frame and at least two fixing elements to fix the component above the support region. A base area of the plinth region and a base area of the support region enclose an acute angle.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

A method of manufacturing a light emitting device includes: providing a substrate including a pair of connection terminals, the connection terminals each having a protruding portion at least on a first main surface of the connection terminal; providing a light emitting element on the protruding portion, the light emitting element having a semiconductor laminate and a pair of electrodes on a same surface of the semiconductor laminate; bonding the pair of the electrodes of the light emitting element and the pair of the connection terminals, respectively, by a molten material; and embedding a surface of the protruding portion of the connection terminals, a surface of the molten material, and a space between the substrate and the light emitting element into a light reflecting member.

A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

A semiconductor chip of a light emitting diode includes a substrate, and an N-type gallium nitride layer, a quantum well layer, and a P-type gallium nitride layer stacked on the substrate successively, an N-type electrode electrically connected to the N-type gallium nitride layer, and a P-type electrode electrically connected to the P-type gallium nitride layer. The quantum well layer includes at least one quantum barrier and at least one quantum well stacked successively in sequence, wherein the growth pressure of the quantum barrier and the growth pressure of the quantum well are different, such that the interface crystal quality between the quantum well and the quantum barrier of the quantum well layer can be greatly improved to enhance the luminous efficiency of the semiconductor chip.

A process for improving the external quantum efficiency of a light emitting diode (LED) is provided by exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time. Kits and processes for constructing a light emitting diode having an improved external quantum efficiency is further provided, which includes exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time.

A process for improving the external quantum efficiency of a light emitting diode (LED) is provided by exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time. Kits and processes for constructing a light emitting diode having an improved external quantum efficiency is further provided, which includes exposing one or more components of an LED, a partially assembled LED, or a completely assembled LED to an amount of hydrogen or hydrogen gas, or to an atmosphere containing higher quantities of hydrogen or hydrogen gas for a period of exposure time.

A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature T.sub.A at a constant speed; a pre-heating step of increasing the temperature from the temperature T.sub.A to a temperature T.sub.B to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the T.sub.B to T.sub.L at a constant speed.

A method for manufacturing a light emitting diode package comprises: arranging a first solder and a second solder between a substrate and a light emitting diode; and subjecting the first solder and the second solder to heat treatment to bond the substrate and the light emitting diode. The heat treatment comprises: increasing the temperature of the first and second solders from room temperature to a temperature Tp; maintaining the temperature Tp; and lowering the temperature Tp. The heating step comprises: a first ramping step of increasing a temperature from room temperature to a temperature T.sub.A at a constant speed; a pre-heating step of increasing the temperature from the temperature T.sub.A to a temperature T.sub.B to impart fluidity to the first and second solders; and a second ramping step of increasing the temperature from the T.sub.B to T.sub.L at a constant speed.