A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

A semiconductor device includes a first external electrode with a first electrode surface portion; a second external electrode with a second electrode surface portion; a MOSFET chip with a built-in Zener diode which includes an active region and a peripheral region; a control IC chip which drives the MOSFET chip based on voltage or current between a drain electrode and a source electrode of the MOSFET chip; and a capacitor which supplies power to the MOSFET chip and the control IC chip. The first electrode surface portion is connected to either the drain electrode or the source, the second electrode surface portion is connected to either the source electrode or the drain electrode, a plurality of unit cells of the MOSFET with the built-in Zener diode are provided in the active region, and the breakdown voltage of the Zener diode is set to be lower than that of the peripheral region.

A method of positioning a component arranged on a substrate includes providing a substrate having at least one device for sensing an electromagnetic field arranged thereat, generating a dedicated conductive-trace structure on the substrate, the dedicated conductive-trace structure being provided for the purpose of generating an electromagnetic field having a known field distribution, applying an electric voltage to the dedicated conductive-trace structure, so that the dedicated conductive-trace structure generates the electromagnetic field having the known field distribution, and sensing the generated electromagnetic field having the known field distribution by means of the device for sensing an electromagnetic field. According to the method, the location of the component in relation to the substrate is determined on the basis of the above-mentioned sensing of the electromagnetic field having the known field distribution.

Provided is a highly reliable semiconductor device capable of reducing stress generated in a semiconductor element even when a highly elastic joining material such as a Pb-free material is used in a power semiconductor having a double-sided mounting structure. The semiconductor device includes a semiconductor element including a gate electrode only on one surface, an upper electrode connected to the surface of the semiconductor element on which the gate electrode is provided, and a lower electrode connected to a surface opposite to the surface of the semiconductor element on which the gate electrode is provided. A connection end portion of the upper electrode with the surface of the semiconductor element on which the gate electrode is provided is located inside an end portion of the surface of the semiconductor element on which the gate electrode is provided, and a connection end portion of the lower electrode with the opposite surface of the semiconductor element is located inside an end portion of the opposite surface of the semiconductor element.

A method for manufacturing a power diode including the following steps is provided. (a) A semi-finished product of the power diode is provided. The semi-finished product of the power diode includes a first electrode, a second electrode, a semiconductor chip, and an adhesive material. The semiconductor chip is located between the first electrode and the second electrode. The adhesive material is located on the first electrode and surrounds the semiconductor chip. (b) The semi-finished product of the power diode is placed into a processing chamber. (c) Pressure in the processing chamber is adjusted to a first predetermined pressure and the first predetermined pressure is maintained for a predetermined time. (d) Pressure in the processing chamber is adjusted to a second predetermined pressure. Step (c) to Step (d) are performed at least twice to form the power diode. (e) The power diode is removed from the processing chamber.

A semiconductor device includes a carrier, a power semiconductor die that includes first and second opposite facing main surfaces, a side surface extending from the first main surface to the second main surface, and first and second electrodes disposed on the first and second main surfaces, respectively, a die attach material arranged between the carrier and the first electrode, wherein the die attach material forms a fillet at the side surface of the power semiconductor die, wherein a fillet height of the fillet is less than about 95% of a height of the power semiconductor die, wherein the height of the power semiconductor die is a length of the side surface, and wherein a maximum extension of the die attach material over edges of a main surface of the power semiconductor die facing the die attach material is less than about 200 micrometers.

A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

To provide a semiconductor device 100 including a semiconductor element with a less warped chip. A semiconductor device manufacturing method include: bonding a rear surface of a chip having electrodes on both sides thereof to a front surface of a substrate; providing, to the front surface of the substrate to which the chip is bonded, a plating protective film having an opening at a position which is on the front surface of the chip and corresponds to an electrode at which plating is to be formed, after the bonding; plating the electrode of the chip after the providing; and removing the plating protective film from the substrate, after the plating.

A device includes a first die, a second die, one or more redistribution layers (RDLs) electrically connected to the first die, a plurality of connectors on a surface of the one or more RDLs and a package substrate electrically connected to the first die and the second die. The package substrate is electrically connected to the first die through the one or more RDLs and the plurality of connectors. The package substrate comprises a cavity, and the second die is at least partially disposed in the cavity.

An electronic module for power control includes a carrier element, at least one power switching element having a cooling surface, and a cooling body. The at least one power switching element may be electrically connected to the carrier element. In an assembled state of the electronic module, the cooling body may be thermally conductively connected directly to the cooling surface of the power switching element. When a busbar is present, the busbar may be arranged between the carrier element and the at least one power switching element thereby producing an electrical connection between the carrier element and the at least one power switching element.