A seed laser is configured to emit seed laser light. A plurality of optical amplifiers is configured to generate amplified laser light by amplifying the seed laser light. Each of the optical amplifiers is configured to separately direct its respective amplified laser light to a medium without being optically combined within the laser assembly with any of the other amplified laser light emitted by other optical amplifiers in the plurality of optical amplifiers.

A system for generating extreme ultraviolet light, in which a target material inside a chamber is irradiated with a laser beam to be turned into plasma, includes a first laser apparatus configured to output a first laser beam, a second laser apparatus configured to output a pedestal and a second laser beam, and a controller connected to the first and second laser apparatuses and configured to cause the first laser beam to be outputted first, the pedestal to be outputted after the first laser beam, and the second laser beam having higher energy than the pedestal to be outputted after the pedestal.

A macroscopic entanglement state in which a polarization state has a strong quantum correlation is realized by use of a macroscopic laser light. A laser oscillator includes a ring resonator having an optical fiber ring, an optical amplifier for maintaining an amplitude of a laser pulsed light propagating on the optical fiber ring, and three optical fibers that are connected with respective polarization controllers, and, after changing a polarization state of the laser pulsed light being a qubit extracted at a predetermined branch ratio from the optical fiber ring by the polarization controllers, couples the changed laser pulsed light whose polarization state has been changed with the laser pulsed light propagating on the optical fiber ring, and each polarization controller rotates the polarization state of the laser pulsed light with an S1 axis, an S2 axis, and an S3 axis, which are orthogonal to each other, as a rotation axis.

A laser machining device includes a laser light source, a spatial light modulator which includes a display unit, an objective lens, an image-transfer optical system, a camera and a controller. The controller executes first display processing and second display processing. According to first display processing, when the camera captures the image, the display unit displays a first phase pattern for adjusting a condensing position of laser light condensed by the objective lens to a first condensing position. According to second display processing, when the camera captures the image, the display unit displays a second phase pattern for adjusting the condensing position of the laser light condensed by the objective lens to a second condensing position different from the first condensing position in an irradiation direction of the laser light.

A laser machining device includes a laser light source, a spatial light modulator which includes a display unit, an objective lens, an image-transfer optical system, a camera and a controller. The controller executes first display processing and second display processing. According to first display processing, when the camera captures the image, the display unit displays a first phase pattern for adjusting a condensing position of laser light condensed by the objective lens to a first condensing position. According to second display processing, when the camera captures the image, the display unit displays a second phase pattern for adjusting the condensing position of the laser light condensed by the objective lens to a second condensing position different from the first condensing position in an irradiation direction of the laser light.

The invention relates to a method for providing control data of a laser device (10) for the non-destructive laser-induced property change of a polymer structure (14). As steps, the method includes ascertaining (S10) a respective irradiation parameter range for preset irradiation parameters of the laser device (10) by means of an irradiation model, wherein a property change model is provided in the irradiation model, in which a caused property change of the polymer structure (14) is modelled depending on the irradiation parameters, wherein a destruction threshold value model is provided in the irradiation model, in which at least one threshold value for a laser-induced optical breakthrough of the polymer structure is modelled depending on the irradiation parameters, and wherein the caused property change from the property change model is optimized while limiting by the threshold value from the destruction threshold value model for ascertaining the irradiation parameter ranges.

A method is disclosed for controlling a laser device for a laser-induced refractive index change (URIC) of a polymer structure. The laser device is controlled by a control device such that it emits pulsed laser pulses in a shot sequence in a preset pattern into the polymer structure. The laser pulses are emitted with preset irradiation parameters for refractive index change of the polymer structure, wherein for adjusting an order of magnitude of the refractive index change, a spatial pulse distance of the laser pulses in the polymer structure is adapted and the further irradiation parameters are kept within respective preset irradiation parameter ranges.

A method of fiber laser processing of thin film deposited on a substrate includes providing a laser beam from at least one fiber laser which is guided through a beam-shaping unit onto the thin film. The beam-shaping optics is configured to shape the laser beam into a line beam which irradiates a first irradiated thin film area Ab on a surface of the thin film, with the irradiated thin film area Ab being a fraction of the thin film area Af. By continuously displacing the beam shaping optics and the film relative to one another in a first direction at a distance dy between sequential irradiations, a sequence of uniform irradiated thin film areas Ab are formed on the film surface defining thus a first elongated column. Thereafter the beam shaped optics and film are displaced relative to one another at a distance dx in a second direction transverse to the first direction with the distance dx being smaller than a length of the irradiated film area Ab. With the steps performed to form respective columns, the elongated columns overlap one another covering the desired thin film area Af. The dx and dy distances are so selected that that each location of the film area Af is exposed to the shaped laser beam during a cumulative predetermined duration.

A thin film Brewster coupling device configured for low loss transmission of an imposed polarized parallel to plane of incidence 8.5 micron to 11.5 micron wavelength laser beam and simultaneous high reflectivity of a polarized perpendicular to plane of incidence 2 micron to 4 micron wavelength laser beam. The device comprising an optical media substrate and at least one dielectric stack optically coupled to the optical media substrate where the dielectric stack comprises a dielectric layer and an overlayer, the dielectric layer and the overlayer each comprising a thickness of nominally a quarter wavelength of the 2 micron to 4 micron wavelength laser beam, and oriented at near the Brewster Angle to the incident 8.5 micron to 11.5 micron wavelength laser beam. The substrate and dielectric mediums of necessary characteristics to result in low LIDT, high strength, chemical inertness and high thermal conductivity.

An optical arrangement for adjusting the wavelength of light, comprising: a first light source arranged to generate a first beam of light at a first wavelength; a second light source arranged to generate seed light at a second wavelength; a first Raman shifting medium arranged to receive the light from the first light source in combination with the seed light from the second light source, and to produce, by stimulated Raman scattering, output light at the second wavelength and having temporal properties determined by those of the first beam of light; a third light source arranged to generate seed light at a third wavelength; and a second Raman shifting medium arranged to receive the output light from the first Raman shifting medium in combination with the seed light from the third light source, and to produce, by stimulated Raman scattering, output light at the third wavelength and having temporal properties determined by those of the output light from the first Raman shifting medium; wherein the third wavelength is greater than the second wavelength, and the second wavelength is greater than the first wavelength; wherein the frequency difference between the first beam of light and the seed light from the second light source is a frequency difference where the first Raman shifting medium exhibits Raman gain; and wherein the frequency difference between the output light from the first Raman shifting medium and the seed light from the third light source is a frequency difference where the second Raman shifting medium exhibits Raman gain. Also provided is a corresponding method of adjusting the wavelength of light.