A sensor device of the present invention includes first sensors receiving a plurality of driving signals; second sensors outputting a plurality of sensing signals in response to the driving signals; and a sensor receiver connected receiving the sensing signals from the second sensors, and including a band pass filter filtering the sensing signals. The band pass filter includes a multi-path filter in which a frequency of the driving signals is set as a center frequency; a gain amplifier amplifying signals filtered through the multi-path filter according to a predetermined gain value; and a buffer isolating the multi-path filter and the gain amplifier from each other.

A pixel circuit includes a differential amplifier. The differential amplifier includes a non-inverting input terminal, an inverting input terminal, and an output terminal. The differential amplifier includes an input differential pair including first and second NMOS transistors, a current mirror pair including PMOS transistors, and a constant current source including a fifth NMOS transistor. A threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of the fifth NMOS transistor. Further, the threshold voltage of each of the first and second NMOS transistors is higher than a threshold voltage of another NMOS transistor.

A system for measuring electrical charge, comprising a capacitance detector (110) connected to a charge integrator (120) being an operational amplifier with capacitance (Cf) feedback (130), wherein the input stage (121) of the charge integrator (120) comprises a pair of symmetrically connected complementary JFET transistors (T.sub.1, T.sub.2), the gates of which are connected to the input of the charge integrator (120), characterized in that an n-type transistor (T.sub.1) of the complementary pair of transistors (T.sub.1, T.sub.2) has its drain connected to a voltage regulating system (122).

A system for measuring electrical charge, comprising a capacitance detector (110) connected to a charge integrator (120) being an operational amplifier with capacitance (Cf) feedback (130), wherein the input stage (121) of the charge integrator (120) comprises a pair of symmetrically connected complementary JFET transistors (T.sub.1, T.sub.2), the gates of which are connected to the input of the charge integrator (120), characterized in that an n-type transistor (T.sub.1) of the complementary pair of transistors (T.sub.1, T.sub.2) has its drain connected to a voltage regulating system (122).

A charge amplifier circuit is provided. The charge amplifier circuit is couplable to a transducer that generates an electrical charge that varies with an external stimulus. The charge amplifier circuit includes an amplification stage having an input node, couplable to the transducer, and an output node. The amplification stage biases the input node at a first direct current (DC) voltage. The charge amplifier circuit includes a feedback circuit, which includes a feedback capacitor, electrically coupled between the input and output nodes of the amplification stage. The feedback circuit includes a resistor electrically coupled to the input node, and a level-shifter circuit, electrically coupled between the resistor and the output node. The level-shifter circuit biases the output node at a second DC voltage and as a function of a difference between the second DC voltage and a reference voltage.

Reducing a sensitivity of an electromechanical sensor is presented herein. The electromechanical sensor comprises a sensitivity with respect to a variation of a mechanical-to-electrical gain of a sense element of the electromechanical sensor; and a voltage-to-voltage converter component that minimizes the sensitivity by coupling, via a defined feedback capacitance, a positive feedback voltage to a sense electrode of the sense element—the sense element electrically coupled to an input of the voltage-to-voltage converter component. In one example, the voltage-to-voltage converter component minimizes the sensitivity by maintaining, via the defined feedback capacitance, a constant charge at the sense electrode. In another example, the electromechanical sensor comprises a capacitive sense element comprising a first node comprising the sense electrode. Further, a bias voltage component can apply a bias voltage to a second node of the electromechanical sensor. In yet another example, the electromechanical sensor comprises a piezoelectric sense element.

In a preamplifier (amplifier) for the radiation detector, an interconnection layer connected to the bonding pad forms one electrode of a feedback capacitor. Since there is no wiring for connecting the bonding pad and capacitor, a parasitic capacitance caused by the wiring will not be generated. Moreover, the capacitor is arranged below the bonding pad with a conductive layer serving as the other electrode, so that the feedback capacitance of the capacitor is included in the parasitic capacitance between the interconnection layer and the substrate. Compared to the conventional case, an amount of capacitance corresponding to the parasitic capacitance caused by wiring and the feedback capacitance for the capacitor is reduced from the input capacitance. Thus, the input capacitance for the amplifying circuit is reduced.

In a preamplifier (amplifier) for the radiation detector, an interconnection layer connected to the bonding pad forms one electrode of a feedback capacitor. Since there is no wiring for connecting the bonding pad and capacitor, a parasitic capacitance caused by the wiring will not be generated. Moreover, the capacitor is arranged below the bonding pad with a conductive layer serving as the other electrode, so that the feedback capacitance of the capacitor is included in the parasitic capacitance between the interconnection layer and the substrate. Compared to the conventional case, an amount of capacitance corresponding to the parasitic capacitance caused by wiring and the feedback capacitance for the capacitor is reduced from the input capacitance. Thus, the input capacitance for the amplifying circuit is reduced.

A negative feedback inductor and a gate inductor are formed in different wiring layers of a substrate so as to be at least partially overlapped with each other in a plan view. When the lower wiring layer is thinner and the upper wiring layer is thicker, the negative feedback inductor Lc is formed in the lower wiring layer that is thinner.

A negative feedback inductor and a gate inductor are formed in different wiring layers of a substrate so as to be at least partially overlapped with each other in a plan view. When the lower wiring layer is thinner and the upper wiring layer is thicker, the negative feedback inductor Lc is formed in the lower wiring layer that is thinner.