A bandpass parametric amplifier circuit includes a plurality of unit cells. At least one unit cell includes a first inductor having a first node coupled to a center conductor and a second node coupled to ground. There is a first capacitor having a first node coupled to the center conductor and a second node coupled to ground. There is a second inductor having a first node coupled to the center conductor. A second capacitor has a first node coupled to a second node of the second inductor. The second capacitor and the second inductor are in series with the center conductor.

An amplifier arrangement comprises N amplifier stages comprising a main amplifier stage and a plurality of peaking amplifier stages. A transmission line comprises a varying impedance for transforming a load impedance to a higher impedance at the main amplifier stage, wherein the plurality of peaking amplifiers are coupled at intermediate locations to the transmission line. The amplifier arrangement is configured such that at least two of the peaking amplifiers are collectively driven with time delayed versions of substantially the same signal. The amplifier arrangement may be configured to operate with N−2 or fewer transition points in a Doherty mode of operation. As such, the amplifier arrangement may comprise more amplifier stages than are necessarily required in a Doherty amplifier arrangement having the same number of transition points.

A driver circuit for a composite power amplifier configured to operate in at least one Chireix-mode a first and a second sub-amplifier for amplification of an input signal into an output signal is disclosed. An input network of the driver circuit comprises a means configured to provide a first signal which is linearly derivable from the input signal, and a second signal which is non-linearly derivable from the input signal. The input network combines the first signal, at zero degrees phase shift, and the second signal, at 90 degrees phase shift, to obtain a first feeding signal for the first sub-amplifier. Furthermore, the input network combines the first signal, at 180 degrees phase shift, and the second signal, at 90 degrees phase shift, to obtain a second feeding signal for the second sub-amplifier.

Antenna waveguide transitions for solid state power amplifiers (SSPAs) are disclosed. An SSPA includes a waveguide channel that is configured to propagate an input signal, such as an electromagnetic signal, from an input port to a solid state amplifier for amplification. The waveguide channel is further configured to propagate an amplified signal from the solid state amplifier to an output port. Waveguide transitions to and from the solid state amplifier are bandwidth matched to the waveguide channel. Additionally, the waveguide transitions may be thermally coupled to the waveguide channel. The waveguide transitions may include antenna structures that have a signal conductor and a ground conductor. In this manner, the SSPA may have improved broadband coupling as well as improved thermal dissipation for heat generated by the solid state amplifier.

A transceiver or RF front end employing a transformer with a low loss transmit/receive (T/R) switch circuit in the ground path. In various embodiments, differential outputs of a power amplifier are coupled to the first winding of the transformer, while the input of a low noise amplifier is coupled to the second side of the transformer via a matching inductor. The T/R switch circuit, which may be a thin oxide CMOS transistor, is coupled between the second side of the transformer and ground. In operation, the T/R switch circuit may be enabled during transmit mode operations of the power amplifier, such that a low impedance path to ground is provided at the input of the low noise amplifier, thereby protecting it from high voltage swings generated by the power amplifier.

A radio frequency duplexer with a first directional coupler configured to divide an input reception signal into a first auxiliary reception signal and a second auxiliary reception signal, where the first auxiliary reception signal and the second auxiliary reception signal comprise signal components at a reception frequency, a first filter configured to filter the first auxiliary reception signal to obtain a third auxiliary reception signal, a second filter configured to filter the second auxiliary reception signal to obtain a fourth auxiliary reception signal, where pass bands of the first and the second filters comprise the reception frequency, a second directional coupler configured to combine the third auxiliary reception signal with the fourth auxiliary reception signal to obtain an output reception signal.

A circuit for amplifying a source signal generated by a signal source having a first impedance includes a transmission line transformer (TLT) having a first, a second, a third, and a fourth port wherein the TLT is coupled to receive the source signal at the first port and configured to output a corresponding impedance matched signal at the second port, the second port is coupled to the third port of the TLT, the circuit also including a TLT load having a first terminal coupled to the fourth port of the TLT and a second terminal coupled to a reference potential. The circuit additionally includes an amplifier device responsive to the impedance matched signal to generate an amplified signal.

A Doherty amplifier according to the disclosure includes an input terminal, a first input transmission line connected to the input terminal via a branch portion, a second input transmission line connected to the input terminal via the branch portion, a carrier amplifier connected to the first input transmission line, a peak amplifier connected to the second input transmission line, a first output transmission line including one end connected to output of the carrier amplifier, a second output transmission line including one end connected to output of the peak amplifier, a synthesis line including one end connected to another end of the first output transmission line and another end of the second output transmission line and an output terminal connected to another end of the synthesis line, wherein the first output transmission line includes a wide portion which is wider than another portion of the first output transmission line.

RF transistor amplifiers include an RF transistor amplifier die having a Group III nitride-based semiconductor layer structure and a plurality of gate terminals, a plurality of drain terminals, and at least one source terminal that are each on an upper surface of the semiconductor layer structure, an interconnect structure on an upper surface of the RF transistor amplifier die, and a coupling element between the RF transistor amplifier die and the interconnect structure that electrically connects the gate terminals, the drain terminals and the source terminal to the interconnect structure.

An RF power amplifier includes an amplifier device and a shunt-inductance circuit. The amplifier device includes a substrate, a combining node lead, first and second amplifier dies coupled to the substrate, and first and second output circuits. The first and second amplifier dies are configured to amplify first and second input RF signals, respectively, to produce first and second output RF signals at first and second output terminals, respectively. The first output circuit includes a first inductive path connecting the first output terminal to the lead. The second output circuit includes a second inductive path connecting the second output terminal to the lead. The lead is configured to combine the first and second output RF signals to produce a third output RF signal. The shunt-inductance circuit is coupled between the first output terminal and a ground reference.